Afonics Fibreoptics
Abstract: No abstract text available
Text: PXR0012 AFONICS - InGaAs PIN Diode - Precision machined housing - FC/PC receptacle - Typical responsivity 0.8A/W - Maximum dark current of 2nA - Bandwidth of 1.5GHz - DC electrical isolation of the photodiode case from the receptacle Performance Highlights
|
Original
|
PDF
|
PXR0012
Afonics Fibreoptics
|
RA-0005
Abstract: No abstract text available
Text: RA-0005 AFONICS - Silicon PIN/TIA - 50MHz bandwidth - Dynamic Range > 25dB µW - Typical responsivity 12mV/µ - Differential output µm - Suitable for fibre core diameters less than 100µ Performance Highlights LIMITING VALUES SYMBOL VALUE UNITS Supply voltage
|
Original
|
PDF
|
RA-0005
50MHz
RA-0005
|
RX-0012
Abstract: No abstract text available
Text: RX-0012 AFONICS - Silicon PIN diode - 500MHz bandwidth - Minimum responsivity 0.8A/W at 800nm - Max capacitance 3pF - Max dark current 0.05nA Performance Highlights LIMITING VALUES SYMBOL VALUE UNITS Continuous reverse voltage VR 20 V Power dissipation P 50
|
Original
|
PDF
|
RX-0012
500MHz
800nm
RX-0012
|
Afonics Fibreoptics
Abstract: RX-0011 830nm P900
Text: RX-0011 AFONICS - Silicon PIN diode - 120MHz bandwidth - Typical responsivity 0.6A/W - Operating temperature -40°C to +100°C - Typical dark current 0.1nA Performance Highlights LIMITING VALUES SYMBOL VALUE UNITS VR 20 V Operating temperature Tamb -40 to +100
|
Original
|
PDF
|
RX-0011
120MHz
900nm,
830nm
Afonics Fibreoptics
RX-0011
830nm
P900
|
PXR0110
Abstract: Afonics Fibreoptics
Text: PXR0110 AFONICS Performance Highlights - Si PIN diode - ST receptacle - 500MHz bandwidth - Responsivity typically 0.30A/W at 850nm with 50/125µm fibre - Operating temperature –40ºC to +85ºC - Storage temperature –40ºC to +85ºC LIMITING VALUES Continuous reverse voltage
|
Original
|
PDF
|
PXR0110
500MHz
850nm
850nm
PXR0110
Afonics Fibreoptics
|
PXR0108
Abstract: Afonics Fibreoptics
Text: PXR0108 AFONICS Performance Highlights - Si PIN diode - ST receptacle - 70MHz bandwidth - Responsivity typically 0.62A/W at 850nm with 62.5/125µm fibre - Operating temperature –40ºC to +100ºC - Storage temperature –40ºC to +100ºC LIMITING VALUES Continuous reverse voltage
|
Original
|
PDF
|
PXR0108
70MHz
850nm
850nm,
PXR0108
Afonics Fibreoptics
|
Afonics Fibreoptics
Abstract: Photodiode 1550nm bandwidth LPM0032 LPM0033 PIN photodiode responsivity 1550nm 1.1 InGaAs Photodiode 1550nm PIN photodiode responsivity 1310nm 1.1 PIN Photodiode 1550nm sensitivity
Text: LPM0033 AFONICS Performance Highlights - 1310nm Tx 1550nm Rx WDM - 9/125µm fibre stub receptacle - FC/PC receptacle - 1310nm FP Laser diode minimum 1.2mW into 9/125µm fibre - InGaAs photodiode minimum responsivity 0.45A/W - Optical crosstalk better than –50dB
|
Original
|
PDF
|
LPM0033
1310nm
1550nm
LPM0032
25Gbps
Afonics Fibreoptics
Photodiode 1550nm bandwidth
LPM0033
PIN photodiode responsivity 1550nm 1.1
InGaAs Photodiode 1550nm
PIN photodiode responsivity 1310nm 1.1
PIN Photodiode 1550nm sensitivity
|
pfp830
Abstract: DXR0074 Afonics Fibreoptics
Text: DXR0074 AFONICS Performance Highlights - 850nm LED - ST receptacle - Minimum 50µW into 62.5/125µm fibre at 100mA drive current - Bandwidth > 50MHz - Operating temperature –40 to +85ºC LIMITING VALUES Continuous forward current see note 1 Reverse voltage
|
Original
|
PDF
|
DXR0074
850nm
100mA
50MHz
pfp830
DXR0074
Afonics Fibreoptics
|
Afonics Fibreoptics
Abstract: 1550nm laser diode FXP0011 IEC-825 laser diode 15mw 1550nm FXP0012
Text: FXP0012 AFONICS - 1550nm DFB Laser - 9/125µm fibre pigtail - FC/APC connector - Typical fibre output power of 1.5mW - Laser diode is DC Electrically isolated from housing - Operating temperature 0°C to +85°C Performance Highlights LIMITING VALUES SYMBOL
|
Original
|
PDF
|
FXP0012
1550nm
Afonics Fibreoptics
1550nm laser diode
FXP0011
IEC-825
laser diode 15mw 1550nm
FXP0012
|
VXR0
Abstract: VXR0022 RSLD
Text: VXR0022 - 850nm VCSEL - ST receptacle - PCB mounting - 1.25Gb/s AFONICS Preliminary Specification Performance Highlights - Minimum 600µW into 50/125µm fibre - Operating temperature range 0ºC to +70ºC - Device electrically isolated from receptacle LIMITING VALUES
|
Original
|
PDF
|
VXR0022
850nm
25Gb/s
VXR0
VXR0022
RSLD
|
PIN photodiode responsivity 1550nm 1.1
Abstract: photodiode responsivity 1550nm 2 Photodiode 1550nm bandwidth PIN Photodiode 1550nm Photodiode 1550nm bandwidth Afonics Fibreoptics LPM0032 LPM0033 PIN Photodiode 1550nm 1310nm photodiode InGaAs Photodiode 1550nm
Text: LPM0032 AFONICS Performance Highlights - 1550nm Tx 1310nm Rx WDM - 9/125µm fibre stub receptacle - FC/PC receptacle - 1550nm FP Laser diode minimum 1.2mW into 9/125µm fibre - InGaAs photodiode minimum responsivity 0.45A/W - Optical crosstalk better than –50dB
|
Original
|
PDF
|
LPM0032
1550nm
1310nm
LPM0033
25Gbps
PIN photodiode responsivity 1550nm 1.1
photodiode responsivity 1550nm 2
Photodiode 1550nm bandwidth
PIN Photodiode 1550nm Photodiode 1550nm bandwidth
Afonics Fibreoptics
LPM0032
PIN Photodiode 1550nm
1310nm photodiode
InGaAs Photodiode 1550nm
|
RX-0005
Abstract: No abstract text available
Text: RX-0005 AFONICS - InGaAs PIN Diode - High bandwidth - Responsivity typically 0.8A/W at 1300nm - Maximum dark current of 5nA - Bandwidth of 1.5GHz Performance Highlights LIMITING VALUES SYMBOL VALUE UNITS Continuous reverse voltage VR 30 V Forward current IF
|
Original
|
PDF
|
RX-0005
1300nm
1300nm,
RX-0005
|
LXR0082
Abstract: Afonics Fibreoptics 1310nm photodiode
Text: LXR0082 - 1310nm Fabry Perot Laser Diode - FC/PC compatible receptacle - PCB mounting - High precision ceramic bore AFONICS Performance Highlights - Over 500µW into 9/125µm fibre - Designed for 1.2Gbit/s data rates - Multi-Quantum Well MQW active layer
|
Original
|
PDF
|
LXR0082
1310nm
LXR0082
Afonics Fibreoptics
1310nm photodiode
|
Untitled
Abstract: No abstract text available
Text: R X-0010 AFONICS - Low cost Si PIN Diode - 50MHz bandwidth -R esp onsivit y ttypic ypic ally 0.55A/W Resp esponsivit onsivity ypically - Typic al dar ypical darkk cur currr en entt 0.1nA Per manc e Highligh ts erff or ormanc mance Highlights LIMITING VALUES
|
Original
|
PDF
|
X-0010
50MHz
850nm,
880nm,
|
|
|
Untitled
Abstract: No abstract text available
Text: R A -0011 AFONICS - InGaAs PIN/TIA - 1GHz minimum bandwidth - Differential output and AGC -R esp onsivit y ttypic ypic ally 3300 V/W Resp esponsivit onsivity ypically - Typic al sensitivit y -28dBm ypical sensitivity -M inimum o v er load -3dBm Minimum ov
|
Original
|
PDF
|
-28dBm
|
X0007
Abstract: 850nm 300 nA photo Diode
Text: R X-0007 AFONICS - Low cost Si PIN Diode - 150MHz bandwidth -R esp onsivit y ttypic ypic ally 0.62A/W Resp esponsivit onsivity ypically a ted in - High op en-cir cuit vvoltage oltage when op er open-cir en-circuit oper era phot ov oltaic mo de photo mode Per
|
Original
|
PDF
|
X-0007
150MHz
X0007
850nm 300 nA photo Diode
|
1550nm laser diode
Abstract: Laser InP LD-0004 PIN Photodiode 1550nm PF3000 Afonics Fibreoptics
Text: LD-0004 AFONICS Performance Highlights 1550nm DFB Laser Diode - 3.0mW into 9/125µm fibre available - 1550nm InGaAsP/InP DFB Laser Diode -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum (MQW activ tive lay - Laser diode electrically isolated from monitor photodiode
|
Original
|
PDF
|
LD-0004
1550nm
1550nm laser diode
Laser InP
LD-0004
PIN Photodiode 1550nm
PF3000
Afonics Fibreoptics
|
Afonics Fibreoptics
Abstract: No abstract text available
Text: R X-0008 AFONICS - Si PIN Diode - 350MHz bandwidth -R esp onsivit y ttypic ypic ally 0.35A/W Resp esponsivit onsivity ypically -M aximum dar Maximum darkk cur currr en entt 1.5nA - Op er a ting ttemp emp er a tur e -55°C tto o +125°C Oper era emper era ture
|
Original
|
PDF
|
X-0008
350MHz
Afonics Fibreoptics
|
Untitled
Abstract: No abstract text available
Text: R A -0022 AFONICS - InGaAs PIN/TIA - Differential output and AGC - Dynamic range > 36dB -R esp onsivit y ttypic ypic ally 35 mV/ µW aatt 1300nm Resp esponsivit onsivity ypically mV/µ -B and width 155Mb/s Band andwidth -M inimum o v er load 0 dBm Minimum
|
Original
|
PDF
|
1300nm
155Mb/s
|
Untitled
Abstract: No abstract text available
Text: LD-0003 AFONICS Performance Highlights 1310nm FFabr abr yP er ot LLaser aser D io de abry Per erot Dio iode - Over 1.5mW into 9/125µm fibre available - Designed for 1.2Gbit/s data rates -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum
|
Original
|
PDF
|
LD-0003
1310nm
-40parties.
|
Afonics Fibreoptics
Abstract: PIN 1300nm
Text: R X-0013 AFONICS - InGaAs PIN Diode - 1GHz bandwidth - High responsivity -R esp onsivit y minimum 0.8A/W aatt 1300nm Resp esponsivit onsivity -M aximum dar Maximum darkk cur currr en entt of 2nA - Op er a ting ttemp emp er a tur e -40°C tto o +85°C Oper
|
Original
|
PDF
|
X-0013
1300nm
Afonics Fibreoptics
PIN 1300nm
|
1300nm
Abstract: No abstract text available
Text: R X-0018 AFONICS - InGaAs PIN Diode - Large area - High responsivity -R esp onsivit y ttypic ypic ally 0.8A/W aatt 1300nm Resp esponsivit onsivity ypically -M aximum dar Maximum darkk cur currr en entt of 10nA - Op er a ting ttemp emp er a tur e -40°C tto
|
Original
|
PDF
|
X-0018
1300nm
1300nm
|
810nm
Abstract: TBA 60 LE-0005
Text: LE-0005 AFONICS High Power 810nm LED Preliminary specification Performance Highlights - Typic ally 60µW in e aatt IF=100mA ypically intto 50/125µm fibr fibre - Peak wavelength at 810nm - Bandwidth of 70MHz L I M I T I N G V A LU E S S Y M B OL V A LU E UNI T S
|
Original
|
PDF
|
LE-0005
810nm
100mA
810nm
70MHz
TBA 60
LE-0005
|
LD-0021
Abstract: ld.0021
Text: LD-0021 AFONICS Performance Highlights 635nm V isible LLaser aser D io de Dio iode - 4mW into 9/125µm fibre available - High operating temperature - Low threshold current L I M I T I N G V A LU E S S Y M B OL V A LU E UNI T S Laser diode continuous forward current
|
Original
|
PDF
|
LD-0021
635nm
LD-0021
ld.0021
|