AFT27S006NT1 Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.

MMZ20363B

Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
Contextual Info: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless

Contextual Info: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

Contextual Info: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.