AG 20 Search Results

Contextual Info: PDS: Rev :AG STATUS:Released Printed: Feb 17, 2012 PDS: Rev :AG STATUS:Released Printed: Feb 17, 2012 PDS: Rev :AG STATUS:Released Printed: Feb 17, 2012 PDS: Rev :AG STATUS:Released Printed: Feb 17, 2012 PDS: Rev :AG STATUS:Released Printed: Feb 17, 2012 PDS: Rev :AG

Contextual Info: PDS: Rev :AG STATUS:Released Printed: Sep 13, 2013 PDS: Rev :AG STATUS:Released Printed: Sep 13, 2013 PDS: Rev :AG STATUS:Released Printed: Sep 13, 2013 PDS: Rev :AG STATUS:Released Printed: Sep 13, 2013 PDS: Rev :AG STATUS:Released Printed: Sep 13, 2013 PDS: Rev :AG

Contextual Info: PDS: Rev :AG STATUS:Released Printed: Nov 16, 2013 PDS: Rev :AG STATUS:Released Printed: Nov 16, 2013 PDS: Rev :AG STATUS:Released Printed: Nov 16, 2013 PDS: Rev :AG STATUS:Released Printed: Nov 16, 2013

Contextual Info: PDS: Rev :AG STATUS:Released Printed: Jan 17, 2013 PDS: Rev :AG STATUS:Released Printed: Jan 17, 2013 PDS: Rev :AG STATUS:Released Printed: Jan 17, 2013

Contextual Info: PDS: Rev :AG STATUS:Released Printed: Sep 11, 2013 PDS: Rev :AG STATUS:Released Printed: Sep 11, 2013 PDS: Rev :AG STATUS:Released Printed: Sep 11, 2013

LQ084S3LG01

Abstract: Modul Data Modul AG LQ084S3LG-01
Contextual Info: Specification LQ084S3LG01 Doc. No.: LAI-06073 Version December 2006 Note: This specification is subject to change without prior notice Data Modul AG - www.data-modul.com Data Modul AG - www.data-modul.com Data Modul AG - www.data-modul.com 1 Data Modul AG - www.data-modul.com

LQ084V3DG01

Abstract: D-80687 ss 211 176746 Data Modul AG
Contextual Info: Specification LQ084V3DG01 Doc. No.: LA1-06061 Version November 2006 Note: This specification is subject to change without prior notice Data Modul AG - www.data-modul.com Data Modul AG - www.data-modul.com Data Modul AG - www.data-modul.com 1 Data Modul AG - www.data-modul.com

Contextual Info: SB073P200-W-Ag/Al Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp Data Sheet 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating

Schottky diode wafer

Contextual Info: SB063P200-W-Ag/Al Schottky Barrier Diode Wafer 63 Mils, 200 Volt, 3 Amp Data Sheet 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating

910D

Abstract: A 910D telcon part numbering
Contextual Info: Contacts: TELCONA AG,Head Office: Hori, Switzerland TELCONA AG,Sales Office: Sinsheim, Germany TELCONA AG,Sales Office: Lésigny, France COS INC., 32750 Longwood, FL, U.S.A. Celte Srl, 20063 Cernusco sull Naviglio, Italy, Tel.+41-1-860 2550 Tel.+49-7261-655 388

Contextual Info: SB040P200-W-Ag/Al Schottky Barrier Diode Wafer 40 Mils, 200 Volt, 1 Amp Data Sheet 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating

Contextual Info: SB090P200-W-Ag/Al Schottky Barrier Diode Wafer 90 Mils, 200 Volt, 8 Amp Data Sheet 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating

Contextual Info: SB051P200-W-Ag/Al Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp Data Sheet 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating

Contextual Info: SB106P200-W-Ag/Al Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp Data Sheet 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating

100 Amp current 1300 volt diode

Abstract: 125OC
Contextual Info: SB051C020-1-W-Ag Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

smart parking circuit diagram

Abstract: siemens functional profet sun resistor 400 mohm LT1005-S siemens soft starter siemens automotive relay dc 12v PROFET-. Semiconductor Group BTS550P electric assisted power steering system motor BTS555
Contextual Info: 4 mΩ Smart-Power Highside Switch with Current Sense Dr. Chihao Xu, Siemens AG 17th “Automotive Electronics” conference 3rd/4th June 1997, Munich Dr. Martin März, Siemens AG Rainald Sander, Siemens AG Dr. Alfons Graf, Siemens AG Balanstr. 73, D-81541 Munich

SB065

Abstract: 125OC
Contextual Info: SB060C020-3-W-Ag Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier

Contextual Info: SB106/138P200-W-Ag/Al Schottky Barrier Diode Wafer 106x138 Mils, 200 Volt, 15 Amp Data Sheet 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating

Contextual Info: Notice of the Annual General Meeting of EPCOS AG on March 6, 2002 just everywhere. H 7439/2 3.1.02 To our shareholders: January 2002 Notice of the Annual General Meeting of EPCOS AG, Munich Notice is hereby given that the Annual General Meeting of EPCOS AG

LG2640-1-PF

Contextual Info: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY Pb Lead-Free Parts LA112B/AG-PF DATA SHEET DOC. NO : QW0905-LA112B/AG-PF REV. : A DATE : 25 - Oct. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/6 PART NO. LA112B/AG-PF Package Dimensions

125OC

Contextual Info: SB157/106C015-20-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage

125OC

Contextual Info: SB157/106C025-20-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 25 Volt, 20 Amp, 0.39VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage

Contextual Info: Non-magnetic Thick Film Chip Resistor－NMR Series •Construction L D1 3 W 4 T 7 65 1 D2 2 1 Alumina Substrate 5 Resistor Layer RuO2/Ag 2 Bottom Electrode (Ag) 6 Primary Overcoat (Glass) 3 Top Electrode (Ag-Pd) 7 Secondary Overcoat (Glass) 4 Edge Electrode (Ag-Pd)

Contextual Info: Thick Film Array Chip Resistor－CN Series •Construction 8 9 7 3 4 5 6 2 1 1 Alumina Substrate 4 Edge Electrode Ag 7 Resistor Layer (RuO2/Ag) 2 Bottom Electrode (Ag) 5 Barrier Layer (Ni) 8 Primary Overcoat (Glass) 3 Top Electrode (Ag-Pd) 6 External Electrode (Sn)