Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)17405 4,194,304x4-B it CMOS Dynamic RAM D escription The device C M O S D ynam ic RAM organized as 4 ,1 9 4 ,3 0 4 w ords x 4 bits w ith extended d ata out access m ode. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single
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304x4-B
26/24-pin
26/24-P
7405E
127mm)
1G5-0124
age27
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Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is C M O S S ynchronous D ynam ic RAM organized as 2 ,097,152 - w ord x 8 -bit x 4-bank, it is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a sin g ly 3.3V only
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VG36648041BT
QMEN90N
1G5-0152
age70
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Untitled
Abstract: No abstract text available
Text: VG3617161BT 16Mb CMOS Synchronous Dynamic RAM VIS D escription The V G 3 6 1 7161 BT is C M O S S ynchronous D ynam ic RAM organized as 5 2 4 ,288-w ord X 16-bit X 2-bank. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single 3.3V
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VG3617161BT
288-w
16-bit
50-pin
QMEN90N
G5-0150
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Untitled
Abstract: No abstract text available
Text: VG3617801CT 16Mb CMOS Synchronous Dynamic RAM VIS D escription The V G 36 1780 1 C T is C M O S S ynchronous D ynam ic R AM s organized as 1,048,576-w ord X 8 -bit X 2bank. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and is designed to operate from a s in
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VG3617801CT
576-w
PR0TRU90N
QMEN90N
G5-0133
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Untitled
Abstract: No abstract text available
Text: VIS Preliminary VG4616321B/VG4616322B 262,144x32x2-Bit CMOS Synchronous Graphic RAM Overview The V G 4616321 2 SG R AM is a high-speed C M O S syn ch ro n o u s g raphics RAM containing 16M bits. It is internally configured as a dual 256K x 32 DRAM w ith a synch ro n o u s interface (all signals are registered on
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VG4616321B/VG4616322B
144x32x2-Bit
G5-0145
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)16405 4,194,304x4-B it CMOS Dynamic RAM D escription The device C M O S D ynam ic RAM organized as 4 ,1 9 4 ,3 0 4 w ords x 4 bits w ith extended d ata out access m ode. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single
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304x4-B
26/24-pin
I27mm)
025mm)
G5-0135
age27
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Untitled
Abstract: No abstract text available
Text: VIS VG264260CJ 2 62,144x16-B it CMOS Dynamic RAM Preliminary D escription T he device is C M O S D ynam ic RAM organized as 262, 144-w ord x 16 bits. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and advanced C M O S circu it design technologies. It is packaged in
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VG264260CJ
144x16-B
144-w
40-pin
/28/30/35/40ns
40-Pin
264269G
400mii,
1G5-0125
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V 4265CJ 2 6 2 ,1 4 4 x 1 6 -B it CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design
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4265CJ
40-pin
25/28/30/35/40ns
40/50/60ns
refV4265CJ
4265CJ
400mil,
G5-0118
age28
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C 1 ,0 4 8 ,5 7 6 x 1 6 -Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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18165C
42-pin
50/60ns
G5-0158
age26
18165CJ-5
400mil
42-Pin
18165CJ-6
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