AGILENT HBT TRANSISTOR SERIES Search Results

agilent HBT transistor series

Abstract: tca 335 A 1GC1-8000 HBT agilent series
Contextual Info: Agilent HMMC-5200 DC–20 GHz HBT Series Shunt Amplifier 1GC1-8000 Data Sheet Features • High bandwidth, F–1 dB: 21 GHz typical • Moderate gain: 9.5 dB ±1 dB @ 1.5 GHz • P–1 dB @ 1.5 GHz: 12.5 dBm typical • Low l/f noise corner: < 20 kHz typical

Contextual Info: DC – 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5220 Features • High Bandwidth, F-1dB: 16 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:

Contextual Info: Agilent HMMC-5200 DC–20 GHz HBT Series–Shunt Amplifier Data Sheet Features • High Bandwidth, F−1dB: 21 GHz Typical • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P−1dB @ 1.5 GHz: 12.5 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:

agilent HBT transistor series

Contextual Info: Agilent HMMC-5220 DC–15 GHz HBT Series–Shunt Amplifier Data Sheet Features •High Bandwidth, F−1dB: 16 GHz Typical •Moderate Gain: 10 dB ± 1 dB @ 1.5 GHz •P−1dB @ 1.5 GHz: 12.5 dBm Typical •Low l/f Noise Corner: <20 kHz Typical •Single Supply Operation:

HMMC-5200

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines
Contextual Info: Agilent HMMC-5200 DC–20 GHz HBT Series–Shunt Amplifier Data Sheet Features •High Bandwidth, F−1dB: 21 GHz Typical •Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz •P−1dB @ 1.5 GHz: 12.5 dBm Typical •Low l/f Noise Corner: <20 kHz Typical •Single Supply Operation:

HMMC-5220

Abstract: applications OF IC 7905 ic um 3481 276-137 544 mmic DC-10 GaAs MMIC ESD, Die Attach and Bonding Guidelines 7905 circuit diagram agilent HMMC
Contextual Info: Agilent HMMC-5220 DC-15 GHz HBT Series-Shunt Amplifier Data Sheet Features • High Bandwidth, F-1dB: 16 GHz Typical • Moderate Gain: 10 dB ± 1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12.5 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:

agilent HBT transistor series

Contextual Info: Agilent HMMC-5200 DC-20 GHz HBT Series-Shunt Amplifier Data Sheet Features • High Bandwidth, F-1dB: 21 GHz Typical • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12.5 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:

Contextual Info: DC – 20 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5200 Features • High Bandwidth, F-1dB: 21 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical IN OUT

Contextual Info: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride Si3N4 films deposited using plasma-enhanced

GaAs MMIC ESD, Die Attach and Bonding Guidelines

Abstract: diagram ta 306-2
Contextual Info: HMMC-5200 DC–20 GHz HBT Series–Shunt Amplifier Data Sheet Description Features The HMMC-5200 is a DC to 20 GHz, 9.5 dB gain, feedback amplifier designed to be used as a cascadable gain block for a variety of applications. The device consists of a modified Darlington feedback pair which reduces the

agilent HBT transistor series

Abstract: Amplifier Modules AWT6271 E4419B E9301H Low frequency power transistor and modules fsp Power supply 6624A R04033 E4419
Contextual Info: Application Note WCDMA Cellular 4 mm x 4 mm Power Amplifier Modules Rev 1 Relevant products • AWT6271 • AWT6272 General Description The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed for WCDMA Cellular handsets have an operating

signal generator

Abstract: AWT6252 AWT6274 AWT6275 E4419B E9301H agilent HBT transistor series
Contextual Info: Application Note WCDMA IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 0 RELEVANT PRODUCTS • • • • AWT6252 AWT6274 AWT6275 AWT6276 GENERAL DESCRIPTION The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed

1GC1

Abstract: Die Attach and Bonding Guidelines TC225 GaAs MMIC ESD, Die Attach and Bonding Guidelines 1gc1 agilent TC2-25 2tc2-25 agilent HBT transistor series
Contextual Info: Agilent 1GC1-8048 40–72 GHz Doubler TC225 Data Sheet Features • PIN = + 15 dBm • Wide Bandwidth: 40–72 GHz Usable to 80+ GHz • Low Conversion Loss: 13 dB typical • Low 1/2 and 3/2 spurs: –23 dBc typical Chip Size: Chip Size Tolerance: Chip Thickness:

TC225

Contextual Info: Agilent 1GC1-8048 40–72 GHz Doubler TC225 Data Sheet Features • PIN = + 15 dBm • Wide Bandwidth: 40–72 GHz Usable to 80+ GHz • Low Conversion Loss: 13 dB typical • Low 1/2 and 3/2 spurs: –23 dBc typical Chip Size: Chip Size Tolerance: Chip Thickness:

AWT6282

Abstract: E4419B E9301H agilent HBT transistor series
Contextual Info: Application Note UMTS 1700/IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 1 Relevant products • AWT6278 • AWT6279 • AWT6282 General Description The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed UMTS High Band, and operates from a single lithiumion (Li-ion) battery. The amplifier input and output

monolithic amplifier MAR

Abstract: ADS2001 ERA-5-ED9351 current amplifier note darlington HP54835A monolithic amplifiers
Contextual Info: APPLICATION NOTE Transient Protection of Darlington gain block amplifiers AN-60-034 1. Introduction Monolithic wideband amplifiers are widely used in the RF and microwave systems. Many of these amplifiers use Darlington configuration. Mini-Circuits monolithic amplifiers with model

Contextual Info: APPLICATION NOTE Transient Protection of Darlington gain block amplifiers AN-60-034 1. Introduction Monolithic wideband amplifiers are widely used in the RF and microwave systems. Many of these amplifiers use Darlington configuration. Mini-Circuits monolithic amplifiers with model

DECT telephone schematic

Abstract: Germanium Power Diodes MAAPSS0066 MAAPSS0071 MAAPSS0075 MAAPSS0076 Germanium power
Contextual Info: RF TO LIGHT FEBRUARY 2004 by TestMart NAVICPmart “K” Package VCO Module for Consumer Applications by Sirenza Microdevices High Performance SiGe Amplifiers for Cordless and Wireless Applications by M/A-COM Millimeter Wave Attenuation Measurements with an FFT Analyzer

free transistor

Abstract: BFR740L3RH uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100
Contextual Info: Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond Turn-On / Turn-Off Time TSLP-3-9 Pb-Free / Halogen Free Transistor Package

uln 2008

Abstract: 825000 BFP740F Digital Oscilloscope Preamplifier michael hiebel fundamentals of vector analysis uln 2008 datasheet LQP10A MTA-100 spice ULN ultra Low Noise ULN types
Contextual Info: Application Note, Rev. 1.2, November 2008 Application Note No. 168 BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 16 dB Gain, 1.3 dB Noise Figure & 1 microsecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications

uln 2008

Abstract: BFP740 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A
Contextual Info: Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure & ~ 100 nanosecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications

740F-080930

Abstract: michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note BFP740F LQP10A MTA-100 Miteq SMC-02 AN17-1
Contextual Info: Application Note, Rev. 1.1, January 2009 Application Note No. 171 BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications

transistor C4

Abstract: BFR740L3RH Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier
Contextual Info: Application Note, Rev. 1.0, January 2009 Application Note No. 173 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 18 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications;

k 513

Abstract: MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis bfp640f BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179
Contextual Info: BF P640 F AN179 High Gain , Hi gh IP3 GPS L NA using BF P640 F Si Ge: C Transisto r Applic atio n Note Revision: Rev 1.2, 2010.02.16 RF and Protecti on Devi c es Edition 2010.02.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG