AGR19030EU Search Results

AGR19030EU Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
AGR19030EU		Agere Systems	MOSFET	Original	PDF	186.28KB	11

AGR19030EU Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Product Brief May 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19030E Hz--1990 AGR19030EU AGR19030EF PB03-111RFPP PB03-092RFPP)	PDF
CDM 82 Contextual Info: Preliminary Product Brief April 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal	Original	AGR19030E Hz--1990 AGR19030EU AGR19030EF PB03-092RFPP PB03-066RFPP) CDM 82	PDF
j561 Abstract: T491C AGR19030XF 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680 Contextual Info: Preliminary Data Sheet April 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19030E Hz--1990 AGR19030E DS04-158RFPP DS04-076RFPP) j561 T491C AGR19030XF 100B100JCA500X AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680	PDF
Contextual Info: Preliminary Product Brief November 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19030E AGR19030E AGR19030EU AGR19030EF PB04-013RFPP PB03-111RFPP)	PDF
AGR19030XF Abstract: 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A Contextual Info: Preliminary Data Sheet March 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19030E Hz--1990 AGR19030E DS04-076RFPP PB04-013RFPP) AGR19030XF 100B100JCA500X AGR19030EF AGR19030EU JESD22-C101A	PDF