Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AGRA10E Search Results

    AGRA10E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGRA10E Agere Systems FET Transistor, 10W, 100MHz to 1GHz, N-Channel E-Mode Original PDF
    AGRA10EU Agere Systems 10 W, 100 MHz - 1.0 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGRA10E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tns capacitors

    Abstract: capacitor F3 037 02 100B120FW500X
    Text: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


    Original     		PDF AGRA10E IS-95 DS04-196RFPP DS04-096RFPP) tns capacitors capacitor F3 037 02 100B120FW500X

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM