AHR TRANSISTOR Search Results

AHR TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

AHR TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.	Original	L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G	PDF
Contextual Info: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon FEATURE 3 ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K 2 ƽ We declare that the material of product compliance with RoHS requirements.	Original	L2SB1197KQLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G	PDF
ahr transistor Abstract: L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G sot23 ahq Contextual Info: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197K*LT1 PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB	Original	L2SB1197K L2SD1781K 236AB) L2SB1197KQLT1 L2SB1197KQLT1G 3000/Tape L2SB1197KRLT1 L2SB1197KRLT1G ahr transistor L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G sot23 ahq	PDF
ahr transistor Abstract: L2SB1197KQLT1G L2SB1197KRLT1G L2SB1197K sot23 ahq Contextual Info: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.	Original	L2SB1197KQLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr transistor L2SB1197KRLT1G L2SB1197K sot23 ahq	PDF
Contextual Info: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.	Original	L2SB1197KQLT1G S-L2SB1197KQLT1G L2SD1781K AEC-Q101 236AB) 3000/Tape 10000/Tape L2SB1197KQLT1G	PDF
Contextual Info: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197KQLT1G Series S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. 1 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.	Original	L2SB1197KQLT1G S-L2SB1197KQ L2SD1781K AEC-Q101 236AB) 3000/Tape L2SB1197KQLT1G S-L2SB1197KQLT1G L2SB1197KQLT3G S-L2SB1197KQLT3G	PDF
ahr 49 transistor Contextual Info: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB	Original	L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr 49 transistor	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2908 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 5 A ICM: Collector-base voltage	Original	OT-89 2SD2908 OT-89 100mA 100MHz	PDF
2SD2908 Abstract: 2SD2908 EQUIVALENT 2sd290 ahr transistor SOT89 transistor marking 4A Contextual Info: 2SD2908 2SD2908 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 5 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃	Original	2SD2908 OT-89 100mA 100MHz 2SD2908 2SD2908 EQUIVALENT 2sd290 ahr transistor SOT89 transistor marking 4A	PDF
ahr TRANSISTOR smd Abstract: SMD AHR smd marking AHR MARKING SMD PNP TRANSISTOR ahr TRANSISTOR 2SB1197K hFE CLASSIFICATION Marking Contextual Info: Transistors SMD Type Low Frequency Transistor 2SB1197K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 -0.5V IC / IB= -0.5A / -50mA . 3 0.4 Low VCE sat .VCE(sat) 1 0.55 PNP silicon transistor +0.1 1.3-0.1 +0.1 2.4-0.1 IC = -0.8A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1	Original	2SB1197K OT-23 -50mA -100mA 100MHz ahr TRANSISTOR smd SMD AHR smd marking AHR MARKING SMD PNP TRANSISTOR ahr TRANSISTOR 2SB1197K hFE CLASSIFICATION Marking	PDF
2SB1197K Abstract: AHp MARKING Contextual Info: 2SB1197K SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -800 mA Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range	Original	2SB1197K OT-23-3L 2SB1197K -100mA -50mA 100MHz AHp MARKING	PDF
Contextual Info: LRC LESHAN RADIO COMPANY,LTD. Low Frequency Transistor Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish L2SB1197KRLT1 3 COLLECTOR L2SB1197KQLT1 1 BASE 2 EMITTER 3 FAbsolute maximum ratings Ta = 25_C 1 2 SOT– 23	Original	L2SB1197KRLT1 L2SB1197KQLT1 L2SB1197KRLT1 L2SB1197KQLT1 L2SB1197K OT-23 3000/Tape	PDF
Contextual Info: SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD2098 FEATURES Power dissipation : 0.5 W Tamb=25? PCM Collector current : 5 A ICM Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range T J , T stg: -55? to +150? 1. BASE	Original	OT-89 OT-89 2SD2098 100mA 100MHz 2SD2098	PDF
2SB1197K Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current	Original	OT-23-3L OT-23-3L 2SB1197K -100mA -50mA 100MHz	PDF

marking 4a sot-89 Abstract: 2SB1386 2SD2098 sot89 MARKING 4A Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD2098 FEATURES z Excellent DC current gain characteristics z Complements the 2SB1386 1. BASE 2. COLLECTOR 1 2 MAXIMUM RATINGS TA=25℃ unless otherwise noted	Original	OT-89 OT-89 2SD2098 2SB1386 100mA 100MHz 2SD2098 marking 4a sot-89 2SB1386 sot89 MARKING 4A	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2098 FEATURES z Excellent DC current gain characteristics z Complements the 2SB1386 1. BASE 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted	Original	OT-89-3L OT-89-3L 2SD2098 2SB1386 100mA 100MHz	PDF
2SB1197 Abstract: 2SD1781 ahr sot23 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. 2. EMITTER 3. COLLECTOR	Original	OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz 2SB1197 2SD1781 ahr sot23	PDF
ahr TRANSISTOR Abstract: ahr sot23 Contextual Info: 2SB1197K SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: Package:SOT-23 1 Low Vce(sat) Vce≤-0.5V (Ic/Ib= -0.5A/-50mA) (2) Ic= -0.8A (3) Complements the 2SD1781K	Original	2SB1197K OT-23 A/-50mA) 2SD1781K -100mA -500mA -50mA 100MHZ 062in 300uS ahr TRANSISTOR ahr sot23	PDF
sot23 ahq Abstract: sot23 ahr AHp sot23 ahr transistor ahr sot23 Contextual Info: 2SB1197 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A. Complements the 2SD1781. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO	Original	OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz sot23 ahq sot23 ahr AHp sot23 ahr transistor ahr sot23	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. 2. EMITTER 3. COLLECTOR	Original	OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz	PDF
Contextual Info: Product specification 2SB1197K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 -0.5V IC / IB= -0.5A / -50mA . 3 0.4 Low VCE sat .VCE(sat) 1 0.55 PNP silicon transistor +0.1 1.3-0.1 +0.1 2.4-0.1 IC = -0.8A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1	Original	2SB1197K OT-23 -50mA -100mA 100MHz	PDF
2SB1197 Abstract: ahr TRANSISTOR 2SD1781 top marking AHR ahr sot23 Contextual Info: 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Low VCE sat .VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA). IC =-0.8A. Complements the 2SD1781.	Original	2SB1197 /-50mA) 2SD1781. OT-23 -50uA, -500mA, -50mA -100mA -50mA, 100MHz 2SB1197 ahr TRANSISTOR 2SD1781 top marking AHR ahr sot23	PDF
2SB1197 Contextual Info: 2SB1197 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 Features: SOT-23 * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS(Ta=25°C) Rating	Original	2SB1197 OT-23 OT-23 -500mA, -50mA -100mA -20mA, 100MHz 19-Apr-2011 2SB1197	PDF
2SB1197 Abstract: 2SB1197-P 2SB1197-Q 2SB1197-R 2SD1781 E2180 Contextual Info: 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Low VCE sat .VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781	Original	2SB1197 OT-23 /-50mA) 2SD1781 2SB1197-P 2SB1197-Q 2SB1197-R -500mA, -50mA 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R 2SD1781 E2180	PDF

AHR TRANSISTOR Search Results

AHR TRANSISTOR Result Highlights (5)

AHR TRANSISTOR Datasheets Context Search

ahr transistor

ahr transistor

ahr 49 transistor

2SD2908

ahr TRANSISTOR smd

2SB1197K

2SB1197K

marking 4a sot-89

2SB1197

ahr TRANSISTOR

sot23 ahq

2SB1197

2SB1197

2SB1197