AI01162 Search Results

ST14C02C

Abstract: 9811V2 ST14C02 9811v
Contextual Info: ST14C02C Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM • BYTE and MULTBYTE WRITE (up to 4 Bytes) ■ PAGE WRITE (up to 8 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■ Enhanced ESD/Latch-Up Behavior

ST14C02C

Abstract: 9811V2
Contextual Info: ST14C02C Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM • BYTE and MULTBYTE WRITE (up to 4 Bytes) ■ PAGE WRITE (up to 8 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■ Enhanced ESD/Latch-Up Behavior

ST14C02

Abstract: ST14C02C 24000V
Contextual Info: ST14C02C  CMOS SERIAL ACCESS 2K 256 x 8 EEPROM • ■ ■ ■ ■ ■ ■ ■ ■ ■ 1.000.000 ERASE/WRITE CYCLES MINIMUM OVER 10 YEARS DATA RETENTION SINGLE 3V to 5.5V POWER SUPPLY TWO WIRE SERIAL INTERFACE, FULLY I2C BUS COMPATIBLE BYTE and MULTIBYTE WRITE (UP TO 4

ST14C02C

Contextual Info: ST14C02C CMOS SERIAL ACCESS 2K 256 x 8 EEPROM BRIEF DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ 1,000,000 ERASE/WRITE CYCLES MINIMUM OVER 10 YEARS DATA RETENTION SINGLE 3V to 5.5V POWER SUPPLY TWO WIRE SERIAL INTERFACE, FULLY I2C BUS COMPATIBLE BYTE and MULTIBYTE WRITE (UP TO 4

Contextual Info: ST14C02C CMOS SERIAL ACCESS 2K 256 x 8 EEPROM BRIEF DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ 1,000,000 ERASE/WRITE CYCLES MINIMUM OVER 10 YEARS DATA RETENTION SINGLE 3V to 5.5V POWER SUPPLY TWO WIRE SERIAL INTERFACE, FULLY I2C BUS COMPATIBLE BYTE and MULTIBYTE WRITE (UP TO 4

ST14C02C

Contextual Info: ST14C02C Memory Card IC 2 Kbit 256 x 8 Serial I Bus EEPROM 2C DATA BRIEFING • BYTE and MULTBYTE WRITE (up to 4 Bytes) ■ PAGE WRITE (up to 8 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing