AI2O3 Search Results
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Vishay Intertechnologies TV0402GA-50R0JN-90TRHigh Frequency/RF Resistors DC-26GHz 0402 50ohms 1.5W 5% AI2O3 Gold Wraparound |
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TV0402GA-50R0JN-90TR | Reel | 100 |
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Buy Now | ||||||
AI2O3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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vskt
Abstract: VSKT152
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VSKT152/04PbF E78996 2002/95/EC 18-Jul-08 vskt VSKT152 | |
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Contextual Info: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package |
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E78996 2002/95/EC 18-Jul-08 | |
thyristor battery charging
Abstract: 162pb INT-A-PAK diode
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E78996 18-Jul-08 thyristor battery charging 162pb INT-A-PAK diode | |
D12-CR0805
Abstract: roederstein resistors D12 d12 draloric D25-CR1206 CR0805 vishay CR1206 DRALORIC marking E12 Roederstein k2 BGB 102 cr0805 draloric
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OCR Scan |
D12-CR0805 D25-CR1206 D-95085 D-95100 D-84003 D-84034 F-95101 SUNDERLANDSR46SU roederstein resistors D12 d12 draloric D25-CR1206 CR0805 vishay CR1206 DRALORIC marking E12 Roederstein k2 BGB 102 cr0805 draloric | |
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Contextual Info: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage |
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E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage |
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E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Diode/Diode Module MDC165A/195A/230A FEATURES • High voltage • Electrically isolated by DBC ceramic AI2O3 • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips • Modules uses high voltage power diodes in four basic |
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MDC165A/195A/230A MDC165A MDC195A MDC230A | |
3 phase BUSBARContextual Info: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package |
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E78996 2002/95/EC 18-Jul-08 3 phase BUSBAR | |
VSKD 236
Abstract: VSKD236 vsk.166 vskj 56 vsk 300 VSKC 236
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E78996 2002/95/EC 11-Mar-11 VSKD 236 VSKD236 vsk.166 vskj 56 vsk 300 VSKC 236 | |
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Contextual Info: AfaCßM Metallized Substrates For Microwave Integrated Circuits M/A-COM offers a wide selection of metallized 995 alumina AI2O3 substrates and aluminum nitride ceramic which is an attractive alternative where power and thermal conductivity are a concern. Polished |
OCR Scan |
MIL-G-45204 | |
VSKT162
Abstract: 016W vsk162
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E78996 2002/95/EC 18-Jul-08 VSKT162 016W vsk162 | |
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Contextual Info: VS-VSKT152/04PbF www.vishay.com Vishay Semiconductors Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability |
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VS-VSKT152/04PbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
VSKCContextual Info: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay High Power Products Standard Recovery Diodes, 165 A to 230 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package |
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E78996 2002/95/EC 18-Jul-08 VSKC | |
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Contextual Info: VSK.166, .196, .236.PbF Series Vishay High Power Products Standard Recovery Diodes, 165 A to 230 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) RoHS • 3500 VRMS isolating voltage COMPLIANT • Industrial standard package |
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E78996 18-Jul-08 | |
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FHX13LGContextual Info: F H X 13 LG, FHX14LG Low Noise HEMT Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 3.5 V Gate-Source Voltage vgs -3.0 V Total Power Dissipation Ptot 180 mW Storage Temperature Tstg -65 t o +175 °C Channel Temperature Tch 175 °C Note Note: Mounted on AI2O3 board 30 x 30 x 0.65mm |
OCR Scan |
FHX14LG FHX13LG | |
e789Contextual Info: VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips |
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VSKT152/04PbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 e789 | |
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Contextual Info: VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips |
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VSKT152/04PbF E78996 2002/95/EC 11-Mar-11 | |
vsk 300Contextual Info: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package |
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E78996 2002/95/EC 11-Mar-11 vsk 300 | |
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Contextual Info: VSKT152-04PbF www.vishay.com Vishay Semiconductors Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips |
Original |
VSKT152-04PbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage |
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E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
vskt
Abstract: VSKT152 A3350
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VSKT152/04PbF E78996 18-Jul-08 vskt VSKT152 A3350 | |
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Contextual Info: NTE6234 Powerblock Module Features: D International Standard Package D Direct Copper Bonded AI2O3 Ceramic Base Plate D Planar Passivated Chips D 3600VRMS Isolating Voltage D D D D Applications: D Supplies for DC Power Equipment D DC Supply for PWM Inverter |
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NTE6234 3600VRMS | |
VSKT162
Abstract: vskt 71 vsk 300 GE thyristor 100in
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E78996 2002/95/EC 11-Mar-11 VSKT162 vskt 71 vsk 300 GE thyristor 100in | |
ge thyristor
Abstract: E78996
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E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 ge thyristor E78996 | |