AK 3010 Search Results

ha1864

Abstract: BDX27 BDX28 Q62702-D160 Q62702-D160-V10 Q62702-D160-V6 Q62702-D162 Q62702-D162-V10 Q62702-D162-V16 Q62702-D162-V6
Contextual Info: Ö235b05 QGD4440 7 « S I E G HSC D PNP Silicon Planar Transistors SIEMENS AK TI ENG ESE LL SCH AF 04440 r"-1 3 -z/ BDX27 BDX28 D - BDX 29 BDX 30 BDX 27, BDX 28, BDX 29, and BDX 30 are epitaxial PNP silicon power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.

Wiring Duct

Abstract: 75X2 AK 3081
Contextual Info: T H IS COPY IS PROVIDED ON A RESTRICTED B A S IS AK|D IS NOT TO BE USED — IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. .50 ± . 0 3 0 TYP 112.711.8 I FOR .5. .75. 1.0, o n d 1.5 W I D T H D U C T 72 .0 0 ±.13 I 1 8 2 8 . 8 ±3.2) II «\\ )

24V 30A PCB RELAY

Abstract: 312 fuse 8A SIF312
Contextual Info: C D C1 242V50V~A 312 8A 53 SIF r. 3010 SIF 4 Contacts E-N m s.co elay star le w.e ww e Mad nd erla witz in S S p Ty 0602 us 44 c 43 eA 33 34 12 11 Relay data General data - PCB relay with forcibly guided contacts - Protective separation between coil and contacts > 5.5 mm and contacts side by

RGN2004

Abstract: rgn 1064 rgn 4004 RGN1054 DN904 s41 604 lf RGN354 TL 413 RGN1404 L416D
Contextual Info: Type A4 A A 4 AM H e rste lle r GleicheType C a stilla C a stilla RENS 1274 RENS 1284 RENS 1294 AF 2 AF 3 AF 7 RENS 1244 C astilla C o stilla C a stilla C a s tilla C a stilla C a stilla C a stilla C a stilla C a s tilla A 4 DD A 4 DP 1 C a stilla C a stilla

jd 1803 IC

Abstract: cctkc OB 3309 RP soviet cathode ray siek 1 6H23 DSAGER00034 ROD PENTODE S3 TRIO 64
Contextual Info: * HO* mm * HAi m y / K A T A JIO F CATALOGUE blnlk » Macxb 3 -iIO P r — OHHH H 3 K p y n H e illU H X B M H p e n p O M M L U JieH H O C T H . H3ZieJTHK 3 /ieK T p O H H O H 143HejTHH CO BeTCKO H 3 Jie K T p O H IfK H , 0 6 j i a j i a K > m H e BblCOKOH H a-

IR p613

Abstract: CD 5888 JFET 401 uPD70F3318 70f33 operational amplifier ua 704 uPD70F3316 uPD70F3316Y uPD70F3318Y diode LT 675 IN 407
Contextual Info: Preliminary User’s Manual V850ES/KJ1+ 32-Bit Single-Chip Microcontrollers Hardware µPD70F3316 µPD70F3316Y µPD70F3318 µPD70F3318Y Document No. U16893EJ1V0UD00 1st edition Date Published March 2004 N CP(K) 2004 Printed in Japan [MEMO] 2 Preliminary User’s Manual U16893EJ1V0UD

TLGD231

Contextual Info: TOSHIBA TLGD231 TO SHIBA LED LA M P GaP GREEN LIGHT EMISSION TLGD231 Unit in mm PANEL CIRCUIT INDICATOR • • • 4.0 ± 0.2 2X4mm Arch Lens All Plastic Mold Type Colorless Clear Lens Low Drive Current, High Intensity Green Light Emission Recommended Forward Current : Ijr = 15~20mA DC

TLGC160

Contextual Info: TO SH IBA TLGC160 TOSHIBA LED LAMP GaP GREEN LIGHT EMISSION T L G C 1 60 Unit in mm PANEL CIRCUIT INDICATOR • • • Striking Bright All Plastic Mold Type : Clear Transparent Lens Low Drive Current, High Intensity Green Light Emission. rvecuiiniieuueu rurw a.ru v^urrtjnt ; j.j<r —

Contextual Info: •PRODUCT TABLE ry p t; AA 1101F A A 1101W A A 1102W A A 1 t1 1 C A A 1111R AA1112H A A 2202S A A 2222S A A 2434D A A 2533D A A 3365S A A 3822K A A 3889S A A 5304S A A 5305S A A 5307S A A 5334S A A 5335S AA5351K A A 5362X A A 5385X AA7351K A A A101 AA A103

S3010

Abstract: Scans-0017322
Contextual Info: l8 D5n T P M O Æ -n E H T O Æ TRIODE-PENTODE OBLUME CBEÆ EHM fl T p H O A -n e H T o a b ÔJioKax hhkob GENERAL 1 8 <t>5 n K a a p o B o ii n p e a H a 3H a n e H p a 3BepTKH c n o c j ie z io B a T e j ib H b iM /m a paôoTbi T e jie B H 3 H O H H b ix

Contextual Info: A dvanced P o w er Te c h n o l o g y APT30M85BNFR APT3010BNFR POWER MOS IV« 300V 40A 0.085a 300V 35A 0.1000 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS 'd All Ratings: Tc = 25°C unless otherwise specified.

ic 565

Abstract: V850ES/SG2 556 TIMER CIRCUIT COLLECTION CD 5888 458 TIMER CIRCUIT COLLECTION 703272 V850ES/SJ2 CIRCUIT DIAGRAM OF PHILIPS AMPLIFIER DH 892 uPD703270 PA12 GF 30
Contextual Info: User’s Manual V850ES/SG2 32-Bit Single-Chip Microcontroller Hardware µPD703260 µPD703260Y µPD703261 µPD703261Y µPD703262 µPD703262Y µPD703263 µPD703263Y µPD70F3261 µPD70F3261Y µPD70F3263 µPD70F3263Y µPD703270 µPD703270Y µPD703271 µPD703271Y

bui26

Abstract: BU106 BU120 BUX18 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 10A Py T .V . A p p lic a tio n = 75 • 100W Switching 130 x 130 1 3 0 x 130 BU 106 2N5840 [N-P-N] 2N5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 0) /4 ;A" toff=l.5pSmin.

CIRCUIT DIAGRAM OF PHILIPS AMPLIFIER DH 892

Abstract: U1660 stepper motor philips ID27 703286 pf611 A1273 70F3264 detector fire bpc PM711* 5v TIP40
Contextual Info: User’s Manual V850ES/SJ2 32-Bit Single-Chip Microcontroller Hardware µPD703264 µPD703264Y µPD703265 µPD703265Y µPD703266 µPD703266Y µPD70F3264 µPD70F3264Y µPD70F3266 µPD70F3266Y µPD703274 µPD703274Y µPD703275 µPD703275Y µPD703276 µPD703276Y

sk a 3050 c

Abstract: CI 3060 elsys SK 3050 R rs 3060 cj MBR30150CT MBR3035CT
Contextual Info: E MBR3035CT - MBR30150CT TAIWAN SEMICONDUCTOR 30.0 AMPS. Schottky Barrier Rectifiers TO-22GAB RoHS C O M P L IA N C E I - -refry cr VAV 4i: I •Tirwf Features Plastic m aterial used carries U nde rw rite rs Laboratory C lassifications 94V-0 Metal silicon junction, m ajority carrier conduction

406J

Abstract: 10-32 UNF 2 A
Contextual Info: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERH O USE BipslarPow er Transistors ' C E (S A T ) hpE Package TO -5/TO -39 ia 1r Notes: Part Number 2N3867, S (1) 2N3868, S (1) Bvceo Ic ( v o lt s ) ( am D S )

diode 524 U1J

Abstract: RK713 diode U1J 041 asea type ir A4S07 rxtma1 RELAY nais S4 524 U1J mte relay u1j capacitor
Contextual Info: Catalogue RK 71-10 E ASEA Edition 1 Plug-in type relay units •S Registered trade mBrk Filo R, P a r ti CÌOÌMÌBÌÌ Contents General Ftesistor urtil RXTMA 1 Electrolytic capacitor unit RXTCB 1 flXTCB £ OlL-111led capacitor unit RXTCA 1 im pulse storing units

Z8036AB1

Abstract: Z8036B1
Contextual Info: Counter/Timer and Parallel I/O Unit Features • Two independent 8-bit, double-buffered, bidirectional I/O ports plus a 4-bit special-purpose I/O port. I/O ports feature programmable polarity, programmable direction Bit mode , "pulse catchers," and programmable opendrain outputs.

2N6514

Abstract: 40852 BU106 BUX18 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 1 0 A Py T .V . Application = 75 •100W Switching 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N-P-N] 2N 5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 ;"0) / 4 A

Contextual Info: O A D d v a n c e d P ow er T e c h n o lo g y O APT30M85BNR 300V APT3010BNR 300V S Q * W E R M O S m 40A 0.085Q 35A 0.100Q AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M AXIM UM RATINGS S ym bol V DSS >D *DM V GS V GSM PD L ’^S T G

Q62702-P3604

Contextual Info: S il ic o n P h o t o d e t e c t o r s S i -F o t o d e t e k t o r e n 1. Foto IC für Fernsteuerung rA=25 c Gehäuse Package 1. Photo IC for Remote Control rA=25 c Halbwinkel Halfangle <P deg. Ordering code Typ Type Frequenz Frequency / kHz SFH 5110-30

6C40n

Abstract: T04Ke 6C40 MA 20103
Contextual Info: 6C40n TPHO# TRIODE OEIUME CBEßEHMH GENERAL BbICOKOBOJTbTHblÎf T p H O fl 6C 40I1 npeflHa3Ha4eH ß j l ü paôoTbi B KanecTBe CTaÔHJiH3aTopa HanpasKeHHH b cxeMax nuTaHHK aH o aa 3JieKTp0 HH0 -Jiy4eBbix Tpyôoic. T he 6C40n h igh -voltage triode has been design ed to

r133a

Abstract: TLR134A TLR133A D133A 134A TLS133A
Contextual Info: TOSHIBA T LD 133A ,T LD 134A T O SH IB A LED L A M P T L G 133A , T L G 134A , T L 0 1 3 3 A , T L 0 1 3 4 A , TLP G 133A T L P G 134A , TL R 133A , T L R 134A . T L S1 3 3 A , T L S134A TL U R 133A , TL U R 134A , T L Y 133A , T L Y 134A PA NEL C IRCUIT IN D IC A T O R

2N3055 RCA

Abstract: RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 1 0 A Py T .V . Application = 75 •100W Switching 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N-P-N] 2N 5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 ;"0) / 4 A