AL QB SOT Search Results

BLS3135-20

Abstract: microwave transistor 03 SOT422A sot422
Contextual Info: DISCRETE SEMICONDUCTORS 0ÂTÂ Sin] H T BLS3135-20 Microwave power transistor Product specification Philips Sem iconductors 2000 Feb 01 PHILIPS Philips Semiconductors Product specification Microwave power transistor BLS3135-20 FEATURES PINNING - SOT422A • S uitable fo r short and m edium pulse applications

transistor top 222

Abstract: LTE21025R SC15 marking code 439
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Self-aligned process entirely ion implanted

Contextual Info: ^ 7 SGS-THOMSON V # ^D g^ [iL[l TO(MD(gi MJE3439-SGS3439 MJE3440-SGS3440 HIGH VOLTAGE TRANSISTOR D E S C R IP T IO N The MJE3439, MJE3440, SGS3439 and SGS3440 are NPN silicon epitaxial planar transistors respec­ tively in TO -126 and SOT-82 plastic package. They

microwave transistor 03

Abstract: sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor
Contextual Info: DISCRETE SEMICONDUCTORS PPC5001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 03 PHILIPS

il6ac

Abstract: led 7 doan HC40S1A bc55a Analog multiplexer 4051 YJ 162A S691 oscillator DUAL led 7 doan HC69SA cb 4040
Contextual Info: 2. H IG H GATE SPEED CMOS N AN O NOR AND OR INVERTER, BUFFER EXCLUCIVE O R / NOR SCHIMITT TRIGGER MULTI FUNCTION LEVELSHIFTER FLIP-FLOP SELECTION G U ID E HCOOA HCTOOA HC03A HC10A HC20A HC30A HC132A HC133A HC02A HCT02A HC27A HC4002A HC4078A HC08A HCT08A HC09A HC11A HC21A

2N5551

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING • Low curren t max. 300 mA PIN • High voltage (max. 160 V). APPLICATIONS DESCRIPTION 1 co lle cto r 2 base 3 e m itte r • S w itching and am plification in high voltage applications

Contextual Info: H C H BC857A / BC857B / BC857C F /M I L D S E M IC O N D U C T O R BC857A BC857B BC857C SOT-23 ’ B M a rk : 3 E / 3 F / 3 G PNP General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 68.

BFT92

Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures

BD139

Abstract: BD136 transistors bd136 bd136 N
Contextual Info: Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING • High current max. 1.5 A PIN • Low voltage (max. 80 V). 1 e m itte r 2 collector, connected to metal part of m ounting surface 3 base APPLICATIONS

transistor c 458

Abstract: BD132 transistor Bd132 BD131 power transistor transistor TO-126 Outline Dimensions power transistor sot32 c 458 c transistor
Contextual Info: DISCRETE SEMICONDUCTORS BD132 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 04 PHILIPS Philips Semiconductors

transistor marking fl

Abstract: BF822W
Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors BF820W; BF822W FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 em itter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional com m unication equipment.

55ay

Abstract: AL SOT-89 BCX51 BCX51-10 BCX51-16 BCX52 BCX52-10 BCX52-16 BCX53 BCX54
Contextual Info: • b b S B ^ l 0D2MbD5 55ß BIAPX N AMER PHILIPS/DISCRETE BCX51 BCX52 BCX53 b?E T> SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended fo r applications in thick and thin -film circuits. These transistors are intended fo r general purposes as well as fo r use in driver staqes

Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistor BFR54 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 1 5 V ). APPLICATIONS DESCRIPTION 1 em itter 2 base 3 collector • Active probes • Frequency m ultipliers

Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • AM m ixers • IF am plifiers in A M /FM receivers.

Contextual Info: Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 e m itte r • V ery high DC current gain (min. 3 0000). 2 base 3 co lle cto r APPLICATIONS

Contextual Info: Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector • High DC current gain (min. 10000). 2 base 3 em itter APPLICATIONS • High gain am plification.

PMBTA64

Contextual Info: Philips Semiconductors Product specification PNP Darlington transistor PMBTA64 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 base • High DC current gain (min. 10000). 2 e m itte r 3 co lle cto r APPLICATIONS

Contextual Info: Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low curren t max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 co lle cto r • High DC current gain (min. 10000). 2 base 3 e m itte r APPLICATIONS

transistor cc 5551

Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low curren t max. 300 mA PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 co lle cto r 2 base 3 e m itte r • G eneral purpose sw itching and am plification

Contextual Info: Philips Semiconductors Product specification PNP general purpose transistor PMBTA56 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • G eneral purpose sw itching and am plification, e.g.

T346

Abstract: 2P transistor
Contextual Info: Philips Semiconductors Product specification 2PB709A PNP general purpose transistor FEATURES PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • G eneral purpose sw itching and am plification.

marking code VV transistors

Abstract: PNP TRANSISTOR "SOT89" marking aa
Contextual Info: Philips Semiconductors Product specification PNP medium power transistors BCX51 ; BCX52; BCX53 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Medium power general purposes

Contextual Info: • bb53T31 0Q24b77 744 APX N AUER PHILIPS/DISCRETE L7E BF721 BF723 J> SILICON EPITAXIAL TRANSISTORS PNP transistors in a microminiature plastic envelope intended for application in class-B video output stages in colour television receivers, and general purpose high voltage circuits.

BSS63

Abstract: bss63 bm on pnp low saturation transistor sot23 BSS64 MV TRANSISTOR SOT23 sot23 marking JR Philips BSS63
Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistor BSS63 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 100 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • H igh-voltage general purpose