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    ALL MOSFET POWER Search Results

    ALL MOSFET POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    ALL MOSFET POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010A Power MOSFET N-CHANNEL POWER MOSFET „ DESCRIPTION By using high technology, UTC UF1010A has the features, such as low RDS ON , fast switching and low gate charge. Like features of all power MOSFET devices, UTC UF1010A can satisfy almost all the


    Original     		PDF UF1010A UF1010A O-220 UF1010AL-TA3-T UF1010AG-TA3-T QW-R502-582

    Power MOSFET, toshiba

    Abstract: 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567
    Text: Power MOSFET Power MOSFETs - Middle & High Voltage Series VDSS≥100V - Aug. 2003 Toshiba Corporation Semiconductor Company DP0530019_01 Copyright 2003 Toshiba Corporation. All rights reserved. 1 Power MOSFET Middle & High Voltage Power MOSFET 1) π-MOS (Trench Gate Power MOSFET) series


    Original     		PDF VDSS100V) DP0530019 O-220SIS Power MOSFET, toshiba 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567

    UF1010EL

    Abstract: UF1010EL-TA3-T UF1010E UF1010EL TO-220
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all HEFET power MOSFET devices’ features,


    Original     		PDF UF1010E UF1010E UF1010EL UF1010EG UF1010E-TA3-T UF1010EL-TA3-T QW-R502-306 UF1010EL UF1010EL-TA3-T UF1010EL TO-220

    UF1010EL

    Abstract: UF1010EL-TA3-T uf1010e
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET „ DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC


    Original     		PDF UF1010E UF1010E UF1010EL-TA3-T UF1010EG-TA3-T UF1010EL-TF1-T UF1010EG-TF1-T O-220 O-220F1 QW-R502-306 UF1010EL

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET „ DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC


    Original     		PDF UF1010E UF1010E UF1010EL-TA3-T UF1010EG-TA3-T UF1010EL-TF1-T UF1010EG-TF1-T UF1010EL-TF2-T UF1010EG-TF2-T QW-R502-306

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET „ DESCRIPTION Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC


    Original     		PDF UF1010E UF1010E UF1010EL-TA3-T UF1010EG-TA3-T UF1010EL-TF1-T UF1010EG-TF1-T QW-R502-306

    ALL POWER MOSFET

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE6019 SYNCHRONOUS RECTIFIER DRIVER FEATURES DESCRIPTION Offers Efficiency Improvement Over Schottky Diode Depends on Drive Configuration of the SR . Drives all Power MOSFET. Prediction Gate Timing Control. Minimum MOSFET Body Diode Conduction.


    Original     		PDF APE6019 APE6019 6019M ALL POWER MOSFET

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE6019 SYNCHRONOUS RECTIFIER DRIVER FEATURES DESCRIPTION Offers Efficiency Improvement Over Schottky Diode Depends on Drive Configuration of the SR . Drives all Power MOSFET. Prediction Gate Timing Control. Minimum MOSFET Body Diode Conduction.


    Original     		PDF APE6019 APE6019 6019M

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET  1 DESCRIPTION 1 TO-220 Using high technology of UTC, UTC UF1010E has the features such as: low RDS ON , fast switching, and low gate charge. Like features of all power MOSFET devices’ features, UTC


    Original     		PDF UF1010E O-220 UF1010E O-220F2 O-263 O-220F1 UF1010EL-at QW-R502-306

    rg45

    Abstract: UF3205G-TQ2-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET HEXFET POWER MOSFET DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial


    Original     		PDF UF3205 UF3205 146nC UF3205L-TA3-T UF3205G-TA3-T UF3205L-TQ2-T UF3205G-TQ2-T UF3205L-TQ2-R UF3205G-TQ2-R O-220 rg45

    uf3205

    Abstract: 304 MOSFET UF3205L uf3205l-ta3-t
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial


    Original     		PDF UF3205 UF3205 146nC UF3205L-TA3-T UF3205G-TA3-T MBR20150CL-TQ2-T MBR20150CG-TQ2-T MBR20150CL-TQ2-R MBR20150ues QW-R502-304 304 MOSFET UF3205L

    pinout of IC 4011

    Abstract: 4011 IC data sheet mc 4011 IC 4011 4011 pinout DATA SHEET IC 4011 SHD225405
    Text: SENSITRON SEMICONDUCTOR SHD225405 TECHNICAL DATA DATA SHEET 4011, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.85, Ohm, 5.5Amp MOSFET œ Isolated œ Hermetically Sealed MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD225405 250mA pinout of IC 4011 4011 IC data sheet mc 4011 IC 4011 4011 pinout DATA SHEET IC 4011 SHD225405

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD208503 TECHNICAL DATA DATA SHEET 274, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 200 VOLT, .100 OHM MOSFET IN A HERMETIC TO-254Z PACKAGE.df MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. RATING


    Original     		PDF SHD208503 O-254Z

    shd225405

    Abstract: diode 250V 250mA
    Text: SENSITRON SEMICONDUCTOR SHD225405 TECHNICAL DATA DATA SHEET 4011, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.85, Ohm, 5.5Amp MOSFET œ Isolated œ Hermetically Sealed MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD225405 10Vsales O-254 shd225405 diode 250V 250mA

    UF3205L

    Abstract: mosfet vds25v ID 62A UF3205
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial


    Original     		PDF UF3205 UF3205 146nC UF3205L-TA3-T UF3205G-TA3-T QW-R502-304 UF3205L mosfet vds25v ID 62A

    Untitled

    Abstract: No abstract text available
    Text: SHD226405 SHD226405B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2037, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.85, Ohm, 5.5Amp MOSFET œ Isolated œ Hermetically Sealed MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD226405 SHD226405B O-257

    SHD226405

    Abstract: No abstract text available
    Text: SHD226405 SHD226405B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2037, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.85, Ohm, 5.5Amp MOSFET œ Isolated œ Hermetically Sealed MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD226405 SHD226405B 250mA SHD226405

    Untitled

    Abstract: No abstract text available
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


    Original     		PDF PFS7323-7329 EN61000-3-2

    Untitled

    Abstract: No abstract text available
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


    Original     		PDF PFS7323-7329 EN61000-3-2

    Untitled

    Abstract: No abstract text available
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


    Original     		PDF PFS7323-7329 EN61000-3-2

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD219503 TECHNICAL DATA DATA SHEET 896, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 200 VOLT, .100 OHM MOSFET IN A HERMETIC CERAMIC LCC-3P PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD219503 250mA SHD219503

    transistor 2SK1603

    Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
    Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all


    OCR Scan     		PDF OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358

    K1118

    Abstract: k1118 transistor MOSFET transistor k1118 transistor k1118 2SK1603 2SK1723 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S
    Text: High Voltage MOSFETs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all possible designs.


    OCR Scan     		PDF OT-89, T0-220 2SK1488 2SK1865SM 2SK1723 2SK1769 2SK1603 2SK1356 2SK1767 2SK1913 K1118 k1118 transistor MOSFET transistor k1118 transistor k1118 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S

    ufn720

    Abstract: UFN723 UFN721 15AQ
    Text: UFN720 UFN721 UFN722 UFN723 POWER MOSFET TRANSISTORS 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosum and a high transconductance. The Unitrode power MOSFET features all of the advantages of MOS technology such as


    OCR Scan     		PDF UFN720 UFN721 UFN722 UFN723 UFN720 UFN721 UFN722 UFN723 15AQ