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    K6X0808C1D-BF55

    Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
    Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI


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    PDF CY7C128A-15VC CY7C128A-15SC CY7C167A-15PC CY7C168A-15PC 24PIN 20PIN 300MIL K6X0808C1D-BF55 HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L

    soj 36

    Abstract: AS6C4008 AS6C4016 TSOP II 44 AS7C34096A AS6C62256 AS7C1025C AS7C256A AS6C6264 AS7C31024B
    Text: Ver. 4 Aug 29 , 2008 3.3V Fast Asynchronus SRAMs Alliance Part Number Density/ Organization Vcc(V) Speed (ns) Operating Temperature Operating Current (mA) Standby Current (mA) AS7C3256A 256K (32K x 8) 3.3V 10/12/15/20 Industrial (-40C to 85C) Commercial temp (0C to 70C)


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    PDF AS7C3256A AS7C3513B AS7C31024B AS7C31025B 600mil) U62256BS 330mil) U62256ADC077LL UL62H256A soj 36 AS6C4008 AS6C4016 TSOP II 44 AS7C34096A AS6C62256 AS7C1025C AS7C256A AS6C6264 AS7C31024B

    AS6C6264A

    Abstract: 6264 SRAM STATIC RAM 6264 AS6C6264A-70PCN SRAM 6264 6264 28pin 6264 static RAM AS6C6264 AS6C6264A-70PIN sram 6800
    Text: MARCH 2009 AS6C6264A 8K X 8 BIT LOW POWER CMOS SRAM FEATURES DESCRIPTION •   The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention


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    PDF AS6C6264A AS6C6264A MARCH/2009 6264 SRAM STATIC RAM 6264 AS6C6264A-70PCN SRAM 6264 6264 28pin 6264 static RAM AS6C6264 AS6C6264A-70PIN sram 6800

    SRAM 6264 application note

    Abstract: No abstract text available
    Text: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product


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    PDF AS6C6264 28-pin AS6C6264 536-bit 02/Feb/07, SRAM 6264 application note

    6264 SRAM

    Abstract: SRAM 6264 AS6C6264 6264 28pin AS6C6264-55PCN AS6C6264-55SCN
    Text: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product


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    PDF AS6C6264 28-pin AS6C6264 536-bit 02/Feb/07, 6264 SRAM SRAM 6264 6264 28pin AS6C6264-55PCN AS6C6264-55SCN

    AS6C6264

    Abstract: 6264 SRAM AS6C6264-55PCN SRAM 6264
    Text: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product


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    PDF AS6C6264 28-pin AS6C6264 536-bit 02/Feb/07, 6264 SRAM AS6C6264-55PCN SRAM 6264

    AS6C6264

    Abstract: AS6C6264-55PCN AS6C6264-55SIN 6264 28pin alliance AS6C6264 SRAM 6264 AS6C6264-55SCN CI 6264 as6c6264-55stin
    Text: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product


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    PDF AS6C6264 28-pin AS6C6264 536-bit 02/Feb/07, AS6C6264-55PCN AS6C6264-55SIN 6264 28pin alliance AS6C6264 SRAM 6264 AS6C6264-55SCN CI 6264 as6c6264-55stin