ALPHA 1000 FET Search Results
ALPHA 1000 FET Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| ST1000GXH35 |
|
IEGT, 4500 V, 1000 A, 2-120B1S |
|
ALPHA 1000 FET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ao4456
Abstract: AO4456l 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31
|
Original |
AO4456 AO4456/L AO4456 AO4456L -AO4456L 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31 | |
AOL1702
Abstract: SRFE
|
Original |
AOL1702 AOL1702 SRFE | |
AOD490
Abstract: SRFE transistor free B60100
|
Original |
AOD490 AOD490 O-252 SRFE transistor free B60100 | |
AON6704LContextual Info: AON6704L 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET AON6704L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load |
Original |
AON6704L AON6704L CoAON6704L | |
aol1412Contextual Info: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
Original |
AOL1412 AOL1412 | |
|
Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
Original |
AO4456 AO4456/L AO4456 AO4456L -AO4456L 00A/us | |
AO4706
Abstract: 24v 5a smps dt1000
|
Original |
AO4706 AO4706/L AO4706 AO4706L -AO4706L 24v 5a smps dt1000 | |
|
Contextual Info: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
Original |
AOL1412 AOL1412 | |
|
Contextual Info: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load |
Original |
AOD490 AOD490 O-252 000A/us | |
AO4926Contextual Info: AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features FET1 FET2 VDS V = 30V VDS(V) = 30V ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5mΩ <24mΩ (VGS = 10V) <29mΩ (VGS = 4.5V) RDS(ON) < 16mΩ |
Original |
AO4926 AO4926 | |
|
Contextual Info: AO4926 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features FET1 VDS V = 30V ID = 9.5A RDS(ON) < 13.5mΩ RDS(ON) < 16mΩ The AO4926 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two |
Original |
AO4926 AO4926L | |
AOL1702Contextual Info: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load |
Original |
AOL1702 AOL1702 AOL1702L 000A/us 0E-06 | |
AOD4110
Abstract: SRFE AOD490
|
Original |
AOD4110 AOD4110 O-252 SRFE AOD490 | |
|
Contextual Info: AO4716 30V N-Channel MOSFET SRFET General Description Product Summary SRFET TM AO4716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and |
Original |
AO4716 AO4716 | |
|
|
|||
|
Contextual Info: AO4726 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM The AO4726 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low side FET in |
Original |
AO4726 AO4726 00A/us | |
|
Contextual Info: AOD492 N-Channel Enhancement Mode Field Effect Transistor 1234566576 General Description Features TM SRFET AOD492 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
Original |
AOD492 AOD492 859AB | |
682 FET datasheet
Abstract: AOD492 T 4512 H diode diode T 4512 H
|
Original |
AOD492 AOD492 O-252 682 FET datasheet T 4512 H diode diode T 4512 H | |
|
Contextual Info: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
Original |
AOL1412 AOL1412 AOL1412L 00A/us | |
|
Contextual Info: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
Original |
AOL1412 AOL1412 00A/us | |
AON7704Contextual Info: AON7704 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET AON7704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
Original |
AON7704 AON7704 | |
AON7702Contextual Info: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
Original |
AON7702 AON7702 VoltageON7702 | |
AON7702Contextual Info: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, |
Original |
AON7702 AON7702 GON7702 | |
AOD4112Contextual Info: AOD4112 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in |
Original |
AOD4112 AOD4112 O-252 | |
|
Contextual Info: AO4706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4706/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in |
Original |
AO4706 AO4706/L AO4706 AO4706L -AO4706L | |