ALSIC 105 Search Results

capax 7-35

Abstract: Felsic capacitors 125 FRS CO 47 capacitor sic-safco felsic co 18 Felsic capacitors FELSIC 018 CO 18 sic-safco capacitor FELSIC 037 CO 37 capacitor sic-safco felsic 039 Sic-Safco promisic
Contextual Info: Modèles de remplacement / Replacement types 4 Anciens modèles / Old ranges Modèles de remplacement /Replacement types ALSIC 105 FRS 1 ALSIC M 105 FRS (1) ALSIC 125 ALSIC FP CELLSIC CI IND 38.1 CMF FP - CMF CMF FRS 12.3 EPSIC R 105 ALSIC IR - ALSIC 145

DIM600DDM17-A000

Contextual Info: . DIM600DDM17-A000 Dual Switch IGBT Module DS5596-1.1 September 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated AlSiC Baseplate with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat *

DIM400GCM33-F000

Contextual Info: . DIM400GCM33-F000 IGBT Chopper Module DS5863- 1.0 September 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated AlSiC Base with AlN substrates • High thermal cycling capability KEY PARAMETERS VCES VCE sat * (typ)

DFM1200NXM33-F000

Abstract: 100FITS
Contextual Info: DFM1200NXM33-F000 Fast Recovery Diode Module DS5912-1.0 March 2007 LN25215 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 2400A Rating

DFM100PXM33-F000

Contextual Info: DFM100PXM33-F000 Fast Recovery Diode Module Replaces DS5907-2 DS5907-3 April 2013 LN30630 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

Contextual Info: DFM100PXM33-F000 Fast Recovery Diode Module Replaces DS5907-2 DS5907-3 April 2013 LN30630 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

DFM200PXM33-A000

Contextual Info: DFM200PXM33-A000 Fast Recovery Diode Module Replaces DS5496-2 DS5496-3 April 2013 LN30362 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

A730069

Abstract: A730064 A730036 A730057 A730078 A730084 A730052 A730023 A730077 A730014
Contextual Info: ALSIC IR 8 000 h / 105°C CO 55 10 . 100 V 15 . 5600 µF ∅ 10 . 16 mm Spécifications applicables - 55°C / + 105°C / 56 jours/days L.L. Specifications NFC 83 110 Modèle C0 55 - Longue durée DIN 41240 - Classe d'utilisation – 55°C + 105°C

din 41240

Abstract: A734127 A735066 A734102 A735025 A734130 alsic A734111 A734109 A735026
Contextual Info: ALSIC HV 160 . 500 V 8 000 h / 105°C 4,7 . 2200 µF ∅ 10 . 35.5 mm Spécifications applicables - 55°C / + 105°C / 56 jours/days L.L. Specifications DIN 41240 - Classe d'utilisation - 55 + 105°C CECC 30 300 Longue durée CEI 60 384-4 Longue durée

bi-directional switches IGBT

Abstract: DIM1200FSM17-A000 LIN26326
Contextual Info: DIM1200FSM17-A000 Single Switch IGBT Module DS5456-3.5 August 2008 LIN26326 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Baseplate with AlN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) 1700V 2.7V

ge traction motor

Abstract: DIM800XSM33-F000
Contextual Info: . DIM800XSM33-F000 Single Switch IGBT Module DS5906-1.1 May 2007 • 10µs Short Circuit Withstand • Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) • Isolated AlSiC Baseplate with AlN Substrates * • High Thermal Cycling Capability

4500a

Abstract: C6250 DFM900NXM45-F000 4500V 900A
Contextual Info: DFM900NXM45-F000 Fast Recovery Diode Module DS5887-1.0 June 2006 LN24652 KEY PARAMETERS FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1800A Rating

TRANSISTOR C 6090

Contextual Info: . DIM1200FSM17-A000 Dual Switch IGBT Module DS5456-3.2 September 2005 • 10µs Short Circuit Withstand • Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) • Isolated AlSiC Baseplate with AlN Substrates * • High Thermal Cycling Capability

Contextual Info: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 1-Aug.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200HE-66S 2. Structure Flat base type Insulated package, AlSiC base plate

DIM400GCM33-F000

Contextual Info: . DIM400GCM33-F000 IGBT Chopper Module DS5863- 1.1 April 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated AlSiC Base with AlN substrates • High thermal cycling capability KEY PARAMETERS VCES VCE sat * (typ) IC

bi-directional switches IGBT

Abstract: DIM600DDM17-A000
Contextual Info: . DIM600DDM17-A000 Dual Switch IGBT Module DS5596-1.2 MAY 2006 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated AlSiC Baseplate with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat * (typ)

DFM600XXM45-F000

Abstract: DS5915-1
Contextual Info: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating

DFM400NXM33-F000

Abstract: 3300V FRD
Contextual Info: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating

data sheet IC 7400

Abstract: IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000
Contextual Info: DIM1600FSM17- A000 Single Switch IGBT Module DS5455-3.2 August 2008 LN26327 FEATURES Isolated AlSiC Base with AIN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability * 10µs Short Circuit Withstand Non Punch Through Silicon

DFM100PXM33-A000

Contextual Info: DFM100PXM33-A000 Fast Recovery Diode Module Replaces DS5564-2 DS5564-3 April 2013 LN30368 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates

DFM400PXM33-F000

Abstract: DFM400PXM33-F
Contextual Info: DFM400PXM33-F000 Fast Recovery Diode Module Replaces DS5909-2 DS5909-3 April 2013 LN30370 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

Contextual Info: DFM400PXM33-A000 Fast Recovery Diode Module Replaces DS5488-3 DS5488-4 April 2013 LN30361 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

DFM900FXM12-A000

Abstract: DFM900FXM12-A IEC1287 10-mm
Contextual Info: DFM900FXM12-A000 Fast Recovery Diode Module Replaces DS5479-1.3 DS5479-2 April 2010 LN26758 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates

Contextual Info: DFM600XXM65-F000 Fast Recovery Dual Diode Module DS5953-1 November 2009 LN26929 FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop KEY PARAMETERS VRRM VF IF IFM 6500V 3.6V 600A 1200A (typ) (max) (max) Isolated AlSiC Base with AlN Substrates