capax 7-35
Abstract: Felsic capacitors 125 FRS CO 47 capacitor sic-safco felsic co 18 Felsic capacitors FELSIC 018 CO 18 sic-safco capacitor FELSIC 037 CO 37 capacitor sic-safco felsic 039 Sic-Safco promisic
Text: Modèles de remplacement / Replacement types 4 Anciens modèles / Old ranges Modèles de remplacement /Replacement types ALSIC 105 FRS 1 ALSIC M 105 FRS (1) ALSIC 125 ALSIC FP CELLSIC CI IND 38.1 CMF FP - CMF CMF FRS 12.3 EPSIC R 105 ALSIC IR - ALSIC 145
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DIM600DDM17-A000
Abstract: No abstract text available
Text: . DIM600DDM17-A000 Dual Switch IGBT Module DS5596-1.1 September 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated AlSiC Baseplate with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat *
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DIM600DDM17-A000
DS5596-1
LN24180)
DIM600DDM17-A000
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mj 13005
Abstract: DIM100XCM65-F000 DIM200XCM65-F000 6500V VCES 6500V
Text: Preliminary information DIM100XCM65-F000 IGBT Chopper Module DS5957-1 January 2010 LN26983 FEATURES KEY PARAMETERS • High Thermal Cycling Capability Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates VCES VCE(sat) * (typ) IC (max)
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DIM100XCM65-F000
DS5957-1
LN26983)
240ty
mj 13005
DIM100XCM65-F000
DIM200XCM65-F000
6500V
VCES 6500V
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DIM400GCM33-F000
Abstract: No abstract text available
Text: . DIM400GCM33-F000 IGBT Chopper Module DS5863- 1.0 September 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated AlSiC Base with AlN substrates • High thermal cycling capability KEY PARAMETERS VCES VCE sat * (typ)
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DIM400GCM33-F000
DS5863-
LN24181)
DIM400GCM33-F000
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DIM600DCM17-A000
Abstract: DIM600DCM17
Text: DIM600DCM17-A000 IGBT Chopper Module DS5491- 4.2 May 2007 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated AlSiC Baseplate with AIN substrate • High Thermal Cycling Capability • Lead Free construction KEY PARAMETERS
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DIM600DCM17-A000
DS5491-
LN25348)
DIM600DCM17-A000
170ty
DIM600DCM17
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DFM200PXM33-F000
Abstract: basic ac motor reverse forward electrical diagram
Text: DFM200PXM33-F000 Fast Recovery Diode Module DS5908- 1.0 March 2007 LN25211 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF
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DFM200PXM33-F000
DS5908-
LN25211)
DFM200PXM33-F000
3300-volt,
basic ac motor reverse forward electrical diagram
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Untitled
Abstract: No abstract text available
Text: DIM600DCM17-A000 IGBT Chopper Module DS5607- 4.1 March 2007 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Baseplate with AIN substrate High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max)
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DIM600DCM17-A000
DS5607-
LN25194)
DIM600DCM17-A000
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ge traction motor
Abstract: DIM800XSM33-F000
Text: . DIM800XSM33-F000 Single Switch IGBT Module DS5906-1.1 May 2007 • 10µs Short Circuit Withstand • Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) • Isolated AlSiC Baseplate with AlN Substrates * • High Thermal Cycling Capability
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DIM800XSM33-F000
DS5906-1
LN25347)
DIM800XSM33-F000
ge traction motor
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4500a
Abstract: C6250 DFM900NXM45-F000 4500V 900A
Text: DFM900NXM45-F000 Fast Recovery Diode Module DS5887-1.0 June 2006 LN24652 KEY PARAMETERS FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1800A Rating
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DFM900NXM45-F000
DS5887-1
LN24652)
DFM900NXM45-F000
4500a
C6250
4500V 900A
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TRANSISTOR C 6090
Abstract: No abstract text available
Text: . DIM1200FSM17-A000 Dual Switch IGBT Module DS5456-3.2 September 2005 • 10µs Short Circuit Withstand • Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) • Isolated AlSiC Baseplate with AlN Substrates * • High Thermal Cycling Capability
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DIM1200FSM17-A000
DS5456-3
LN24177)
DIM1200FSM17-A000
TRANSISTOR C 6090
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Untitled
Abstract: No abstract text available
Text: . DIM800XSM33-F000 Single Switch IGBT Module DS5906-1.0 March 2007 • 10µs Short Circuit Withstand • Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) • Isolated AlSiC Baseplate with AlN Substrates * • High Thermal Cycling Capability
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DIM800XSM33-F000
DS5906-1
LN25203)
DIM800XSM33-F000
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DIM400GCM33-F000
Abstract: No abstract text available
Text: . DIM400GCM33-F000 IGBT Chopper Module DS5863- 1.1 April 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated AlSiC Base with AlN substrates • High thermal cycling capability KEY PARAMETERS VCES VCE sat * (typ) IC
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DIM400GCM33-F000
DS5863-
LN24542)
DIM400GCM33-F000
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DFM100PXM33-F000
Abstract: DFM100PXM basic ac motor reverse forward electrical diagram ALSIC 145
Text: DFM100PXM33-F000 Fast Recovery Diode Module DS5907- 1.0 March 2007 LN25210 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF
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DFM100PXM33-F000
DS5907-
LN25210)
DFM100PXM33-F000
3300-volt,
DFM100PXM
basic ac motor reverse forward electrical diagram
ALSIC 145
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basic ac motor reverse forward electrical diagram
Abstract: DFM400PXM33-F000
Text: DFM400PXM33-F000 Fast Recovery Diode Module DS5909- 1.0 March 2007 LN25212 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF
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DFM400PXM33-F000
DS5909-
LN25212)
DFM400PXM33-F000
3300-volt,
basic ac motor reverse forward electrical diagram
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bi-directional switches IGBT
Abstract: DIM600DDM17-A000
Text: . DIM600DDM17-A000 Dual Switch IGBT Module DS5596-1.2 MAY 2006 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated AlSiC Baseplate with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat * (typ)
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DIM600DDM17-A000
DS5596-1
LN24612)
DIM600DDM17-A000
bi-directional switches IGBT
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DFM450NXM45
Abstract: DS5892-1 DS5892 DFM450NXM45-F000 ln2482
Text: DFM450NXM45-F000 Fast Recovery Diode Module DS5892-1.0 October 2006 LN24820 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 900A Rating
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DFM450NXM45-F000
DS5892-1
LN24820)
DFM450NXM45-F000
DFM450NXM45
DS5892
ln2482
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DIM800ECM33-F000
Abstract: KW transistor
Text: DIM800ECM33-F000 IGBT Chopper Module DS5815-1.2 January 2009 LN26568 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8V 800A
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DIM800ECM33-F000
DS5815-1
LN26568)
DIM800ECM33-F000
KW transistor
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DIM800XSM33-F000
Abstract: No abstract text available
Text: DIM800XSM33-F000 Single Switch IGBT Module PDS5906 1.2 January 2009 LN26569 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8V
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DIM800XSM33-F000
PDS5906
LN26569)
DIM800XSM33-F00ponsibility
DIM800XSM33-F000
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DFM1200FXM12-A000
Abstract: No abstract text available
Text: DFM1200FXM12-A000 Fast Recovery Diode Module DS5480-1.3 November 2007 LN25323 FEATURES Low Reverse Recovery Charge High Switching Speed VRRM VF IF IFM (typ) (max) (max) 1200V 1.9V 1200A 2400A Low Forward Voltage Drop Isolated Copper Base plate AlSiC Baseplate With AIN Substrates
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DFM1200FXM12-A000
DS5480-1
LN25323)
DFM1200FXM12-A000
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DIM800NSM33-F000
Abstract: No abstract text available
Text: DIM800NSM33-F000 Single Switch IGBT Module PDS5615-4.1 January 2009 LN26570 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8V
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DIM800NSM33-F000
PDS5615-4
LN26570)
DIM800NSM33-F000
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Untitled
Abstract: No abstract text available
Text: . DIM1200FSM17-A000 Single Switch IGBT Module DS5456-3.3 April 2006 • 10µs Short Circuit Withstand • Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) • Isolated AlSiC Baseplate with AlN Substrates * • High Thermal Cycling Capability
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DIM1200FSM17-A000
DS5456-3
LN24544)
DIM1200FSM17-A000
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Untitled
Abstract: No abstract text available
Text: . DIM1200FSM17-A000 Single Switch IGBT Module DS5456-3.4 April 2007 • 10µs Short Circuit Withstand • Non Punch Through Silicon KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) • Isolated AlSiC Baseplate with AlN Substrates * • High Thermal Cycling Capability
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DIM1200FSM17-A000
DS5456-3
LN25308)
DIM12y
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DIM200PKM33-F000
Abstract: No abstract text available
Text: DIM200PKM33-F000 IGBT Chopper Module DS5465- 1.0 September 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated AlSiC Base with AlN substrates KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) • High thermal cycling capability
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DIM200PKM33-F000
DS5465-
LN24183)
DIM200PKM33-F000
330ity
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DFM600NXM45-F000
Abstract: No abstract text available
Text: DFM600NXM45-F000 Fast Recovery Diode Module DS5882-1.0 March 2006 LN24486 KEY PARAMETERS FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating
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DFM600NXM45-F000
DS5882-1
LN24486)
DFM600NXM45-F000
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