ALUMINUM BACKSIDE Search Results

Contextual Info: Hammond Mfg. - ROLEC-HAMMOND Painted, Diecast Aluminum Enclosures R240 S. Page 1 of 2 ROLEC-HAMMOND Watertight - Thick Wall Diecast Aluminum R240 Series (AluCLIC Path: Home > Enclosure Index > ROLEC-HAMMOND Aluminum Product Index > R240 Series click to enlarge

PCAN1206H1000BBT1

Abstract: PCAN
Contextual Info: PCAN www.vishay.com Vishay Dale Thin Film High Power Aluminum Nitride, Wraparound Surface Mount, Precision Thin Film Chip Resistor up to 6 W FEATURES • • • • • • High thermal conductivity aluminum nitride substrate Power rating up to 6.0 W Resistance range 30  to 175 

PCAN

Contextual Info: PCAN www.vishay.com Vishay Dale Thin Film High Power Aluminum Nitride, Wraparound Surface Mount, Precision Thin Film Chip Resistor up to 6 W FEATURES • • • • • • High thermal conductivity aluminum nitride substrate Power rating up to 6.0 W Resistance range 30  to 175 

PCAN

Contextual Info: PCAN www.vishay.com Vishay Dale Thin Film High Power Aluminum Nitride, Wraparound Surface Mount, Precision Thin Film Chip Resistor up to 6 W FEATURES • • • • • • High thermal conductivity aluminum nitride substrate Power rating up to 6.0 W Resistance range 30  to 175 

Contextual Info: Si Photo-diode Chip -TKN25PD 1. Scope ‧The specification applies to PIN silicon photo-diode chips. ‧Type : TKN25PD. 2. Structure ‧PIN planar type. ‧Electrode topside cathode : Aluminum. ‧Electrode backside (anode) : Gold alloy. 3. Size ‧Chip size

IR photodiode

Abstract: Photodiode-Array 850 photodiode IR photodiode array ir photodiode wavelength VOC application Circuit IR array photodiode array photodiode data sheet Photodiode-Array chip
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP18-C Monolithic Photodiode Array - Chip Features • • • • Dielectrically Isolated Diodes Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy

IR photodiode

Abstract: Photodiode-Array ma 2830 850 photodiode photodiode IR array ir photodiode wavelength MXP22-C photodiode array DIELECTRICALLY ISOLATED
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP22-C Monolithic Photodiode Array - Chip Features • • • • Dielectrically Isolated Diodes Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy

Contextual Info: Si Photo-diode Chip－TK N53PD 1. Scope •The specification applies to PIN silicon photo-diode chips. •Type : TK N53PD 2. Structure •PIN planar type. •Electrode topside cathode : Aluminum. •Electrode backside (anode) : Gold alloy. 3. Size •Chip size

10-Resistors

Contextual Info: THIN FILM MULTI-TAP RESISTORS MSMT 117 SERIES MECHANICAL DA TA DAT SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE 0.030" 0.030" x 0.030" x 0.010" ±0.003" SILICON TANT ALUM NITRIDE ANTALUM 25,000 Å MINIMUM GOLD; ALUMINUM OPTIONAL BARE SUBSTRA

Contextual Info: IM-CHANIUEL M O S FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 021 " _ “ 0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

10-Resistors

Contextual Info: THIN FILM MULTI TAP RESISTORS 117 SERIES MECHANICAL DATA .030" SIZE SUBSTRATE RESISTOR BONDING PADS BACKSIDE SURFACE .030" x .030" x .010" ± .0 03" SILICON TANTALUM NITRIDE 25,000 À MINIMUM GOLD; ALUMINUM OPTIONAL BARE SUBSTRATE GOLD BACK OPTIONAL ELECTRICAL DATA

Photo SCR

Abstract: PNPN SCR PNPN DATASHEET SCR "AND Gate" scr data sheet and circuit transistor c 557 datasheets of scr photo diode SCR TRIGGER circuit
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1017 Photo SCR Features Light Activated Photo SCR Planar PNPN High Voltage Cathode and Gate pads are Aluminum Wire bondable • Anode is backside of die • Backside Metallization - Gold

"photo transistor"

Abstract: MXP1126-C ua20
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1126-C Photo Transistor Chip Features • • • • • Light Activated Photo Transistor Chip Planar NPN Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy

MSC1342

Abstract: "photo transistor" MXP415-C
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP415-C Photo Transistor Chip Features • • • • • Light Activated Photo Transistor Chip Planar NPN Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy

Contextual Info: MSTF-4 SERIES MECHANICAL DATA SIZE SUBSTRATE RESISTOR BONDING PADS .040" x . 0 4 0 " x . 0 1 0 " + .0 03" SILICON, QUARTZ. OR GLASS NICHROME OR TANTALUM NITRIDE 15.000 MINIMUM GOLD 10.000 À MINIMUM ALUMINUM OPTIONAL BARE SUBSTRATE GOLD BACK OPTIONAL A BACKSIDE SURFACE

Contextual Info: Ä¥£\[L© N-CHANNEL JUNCTION FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .015" 0.381mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

96X96

Abstract: SOLITRON DIE CHIP FET
Contextual Info: ÄTTÄtLOd SOLÌTRÙN PÖWER MOS PET CONTACT METALLIZATION Top Contact: A Aluminum 22,000 Backside Contact: 3,000 A Gold ASSEM BLY RECOMMENDATIONS It is advisable that: a the chip be eutectically mounted with gold silicon preform 98/2% . Die Size 51x51 mils)

Contextual Info: /A Y /A L© N-CHANNEL JUNCTION FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEM BLY RECOMMENDATIONS 016" 0.406mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

Contextual Info: N -C H ANNEL DUAL JU N CTIO N FET CASCODE CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .027" 0.686mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

FET 2N5434

Abstract: 2N5432 2N5434 E-41
Contextual Info: ^ /o u t r a CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .030" 0.762mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%. Die Sis«: 30 x 32

DIE CHIP 2N4091

Abstract: 2N4393 DIE CHIP
Contextual Info: ÄTTÄ[L N-CH ANNEL JUNCTIO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .023" It is advisable that: a the die be eutectically mounted with gold silicon preform 98/2%.

Photo SCR

Abstract: SCR PNPN ma 2830 MSC1330 chip scr mxp1018 MXP1018-C
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1018-C Photo SCR Chip Features • • • • • • • Light Activated Photo SCR Planar PNPN High Voltage Cathode and Gate pads are Aluminum Wire bondable Anode is backside of die

Contextual Info: N -C H ANNEL JU N C TIO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum .024" 0.610mm 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .019" (0.483mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

Contextual Info: SÖÜTp0|N| p0WÈfi MÖS pET CHIP NUMBER CONTACT METALLIZATION Top Contact: 22,000 A Aluminum Backside Contact: 3,000 A Gold ASSEM BLY RECOMMENDATIONS _ S 1 M ILS_ 1.29mm It is advisable that: a) the chip be eutectically mounted with gold silicon preform 98/2%.