AM020 Search Results

AM020331SF-2D

Abstract: mhz rf amplifier module class a power amplifier
Contextual Info: The RF Power House 225 - 300 MHz 2 Watt Power Amplifier AM020331SF-2D DESCRIPTION AMCOM's AM020331SF-2D is a UHF Band Power Amplifier designed for FEATURES high power RF applications. It operates from 225 to 300 MHz and delivers a • Class A Power Amplifier

Contextual Info: AM020331SF-2D Sep. 2007 Rev. 1 DESCRIPTION AMCOM's AM020331SF-2D is a UHF Band Power Amplifier designed for high power RF applications. It operates from 225 to 300 MHz and delivers a minimum P1dB of +31 dBm and a minimum small signal gain of 20 dB. The amplifier is in a drop-in style package.

Contextual Info: HiFET High Voltage GaAs FET AM020MH2-BI-R August 2007 v.3 DESCRIPTION AMCOM’s AM020MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a

AM020MH2-BI-R

Contextual Info: AM020MH2-BI-R Aug 2010 Rev 4 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM020MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications.

Contextual Info: HiFET High Voltage GaAs FET AM020WH2-BI-R February 2011 Rev 0 DC-12 GHz DESCRIPTION AMCOM’s AM020WH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total

RF power amplifier MHz

Abstract: AM020340SF-3H uhf amplifier AM053231SF-3H rf power amplifier 40 MHZ
Contextual Info: The RF Power House 225 - 300 MHz 10 Watt Power Amplifier AM020340SF-3H DESCRIPTION AMCOM's AM020340SF-3H is a UHF Power Amplifier designed for high FEATURES power RF applications. The class AB amplifier operates from 225 to 300 MHz • Covers frequency range from

511117

Contextual Info: PACIFIC M O N O LIT H IC S G A LLIU M ARSENIDE SYSTEMS DATA 51-11=1=7 MODEL PM-AM0201-A/B 0.5-2 GHz MMIC LOW-NOISE AMPLIFIER r . 270"sQ .— H MAX I r 1 10 ' " I - 1 2 9 I H GROUND 1 3 8 7 I 1 RF OUT 4 I I GROUND 1 5 6 1 1 N/C r - rn - FEATURES LOW NOISE

PT 4115

Abstract: maximum gain s2p AM020
Contextual Info: AM020MH2-BI HiFET High Voltage GaAs FET February 2004 v.1 DESCRIPTION AMCOM’s AM020MH2-BI is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a

AP062

Abstract: AM0201
Contextual Info: ss m i PACIFIC MONOLITHICS DA TASH EET G aAs MMIC AMPLIFIERS FEATURES o o o SMALL SIZE HIGH GAIN LOW CURRENT SINGLE SUPPLY VOLTAGE o CASCADABLE o LOW NOISE AND MEDIUM POWER OPTIONS o 10 TO 30 dB GAIN BLOCKS Pacific Monolithics offers a variety of GaAs FET MMIC amplifiers in surface-mount packages for microstrip

Contextual Info: STHV748 Quad ± 90 V, ± 2 A, 3/5 levels, high speed ultrasound pulser Datasheet — production data Features • 0 to ±90 V output voltage ■ Up to 20 MHz operating frequency ■ Embedded low-power, floating high-voltage drivers external voltage rails can be also used

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

sthv748

Abstract: AM020 sthv STHV748QTR
Contextual Info: STHV748 Quad ± 90 V, ± 2 A, 3/5 levels, high speed ultrasound pulser Datasheet — production data Features • 0 to ±90 V output voltage ■ Up to 20 MHz operating frequency ■ Embedded low-power, floating high-voltage drivers external voltage rails can be also used

3FW 62

Abstract: QFN64 1ch high-voltage source driver sthv748 AM020
Contextual Info: STHV748 Quad ± 90 V, ± 2 A, 3/5 levels, high speed ultrasound pulser Features • 0 to ±90 V output voltage ■ Up to 20 MHz operating frequency ■ Embedded low-power, floating high-voltage drivers external voltage rails can be also used ■ Mode operations:

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any