AM27C1 Search Results

am27c1024

Abstract: am27c1024 amd
Contextual Info: a Am27C1024 Advanced Micro Devices 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ — 85 ns 100% Fiashrite programming — Typical programming time o l 8 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to

eprom 27c256

Abstract: 27C256 atmel 27C256 hitachi 27C256 27c256 intel WSI Cross Reference 27c256 toshiba ti 27c256 hitachi 27c256 oki cross
Contextual Info: EPROM CROSS REFERENCE AMD WSI OKI WSI Am27C128 Am27C256 Am27H256 WS57C128FB WS57C256F WS57C256F MSM27C256 WS57C256F SANYO WSI LA7620 WS57C64F ATMEL WSI AT27HC256/L AT27HC256R/R WS57C256F WS57C256F SGS-T WSI M27128/A M27256 WS57C128FB WS57C256F CATALYST WSI

am27c128

Contextual Info: a Advanced Micro Devices Am27C128 128 Kilobit 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to Vcc +1 V • Fast access time — 45 ns High noise immunity ■ Low power consumption — 20 nA typical CMOS standby current

Contextual Info: FINAL a Advanced Micro Devices Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 85 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from -1 V to

Contextual Info: ADV MICRO M E M O R Y b4E J> D2S7S2Ô m 0031^21 T3T Advanced Micro Devices Am27C128 128 Kilobit (16,384 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to Vcc +1 V • Fast access time — 45 ns High noise immunity

CLV044

Abstract: 56497
Contextual Info: ZI FINAL Am27C1024 Advanced Micro Devices 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from -1 V to

AM27C128

Abstract: zi11
Contextual Info: ADV MI C RO MEMORY 4 ÔE D 055752Û 003G327 1 «AMD4 T -4 6 -1 3-29 & Advanced Micro Devices Am27C128 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tlme-55 ns JEDEC-approved pinout ■ Low power consumption: -1 0 0 pA maximum standby current

SS1203

Abstract: N82S191A 27HC642 N82S191 cy7c292 cross reference cy7c291 cross reference
Contextual Info: PROM/RPROM CROSS REFERENCE AMD WSI NATIONAL WSI AM27C49 AM27C191 AM27C291 AM27PS43 AM27S43 AM27S43A AM27S45 AM27S49 AM27S51 AM27S51A AM27S191 AM27S291 WS57C49C WS57C291C WS57C291C WS57C43C WS57C43C WS57C43C WS57C45 WS57C49C WS57C51C WS57C51C WS57C191C WS57C291C

AM27C128

Abstract: cdv0 AM27C128-120
Contextual Info: FINAL Advanced Micro Devices Am27C128 128 Kilobit 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from –1 V to VCC + 1 V — 45 ns ■ High noise immunity ■ Low power consumption — 20 µA typical CMOS standby current

a1334

Contextual Info: FINAL AMDÌ1 Am27C1024 1 Megabit 65 K x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance standard ■ Fast access time — Speed options as fast as 55 ns ■ 100% Flashrite programming ■ Low power consumption — Typical programming time of 8 seconds

Contextual Info: Am27C1024 Advanced Micro Devices 1 Megabit 65,536 X 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time 100% Flashrite programming — 7 0 ns — T yp ica l p ro g ra m m in g tim e o f 8 s e c o n d s ■ Low power consumption — 20 Latch-up protected to 100 mA from -1 V to

AM27C191

Contextual Info: Am27C191 /Am27C291 Advanced Micro Devices 16,384-Bit 2048x8 High-Performance CMOS PROM DISTINCTIVE CHARACTERISTICS High-speed (25 ns)/Low-Power (60 mA) CMOS EPROM Technology 5-Volt ±10% power supplies for both Commercial and Military Direct plug-ln replacement for Bipolar PROM* —

am27c128

Contextual Info: Advanced Micro Devices Am27C128 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tlm e-55 ns ■ JEDEC-approved pinout ■ Low power consumption : -100 nA maximum standby current ■ ±10% power supply tolerance ■ Fast Flashrlte programming

Contextual Info: Am27Cl024 6 5 ,5 3 6 x 1 6-Bit CMOS EPROM Am27C1024 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • Fast access time — 200 ns Low-power dissipation - 250 mW at 5_MHz - 1 mW at E CE = V cc ±0.3 • • • • Programming voltage— 12.5 ±0.3 V First EPROM offering 16-bit inputs and outputs

Contextual Info: AMD£I FINAL Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — 55 ns m axim um access tim e ■ Low power consumption — 100 |aA typical C M O S standby current ■ JEDEC-approved pinouts — 40-Pin D IP/PDIP

NEC uPB

Abstract: ATMEL PROM AM27S45 SS1203 SIGNETICS prom WSI Cross Reference AM27S51A AM27S51 cy7c291 cross reference N82HS1281
Contextual Info: PROM/RPROM CROSS REFERENCE AMD WSI NATIONAL WSI AM27C49 AM27C191 AM27C291 AM27PS43 AM27S43 AM27S43A AM27S45 AM27S49 AM27S51 AM27S51A AM27S191 AM27S291 WS57C49C WS57C291C WS57C291C WS57C43C WS57C43C WS57C43C WS57C45 WS57C49C WS57C51C WS57C51C WS57C191C WS57C291C

27C256 wsi

Abstract: WSI Cross Reference TMM27128
Contextual Info: EPROM CROSS REFERENCE AMD WSI OKI WSI Am27C128 Am27C256 Am27C64 Am27H256 WS57C128FB WS57C256F WS57C64F WS57C256F MSM27C256 W S57C256F SANYO WSI LA7620 WS57C64F ATMEL WSI SGS-T WSI AT27HC256/L AT27HC256R/R AT27HC64/L AT27HC64R/RL WS57C256F WS57C256F WS57C64F

Contextual Info: FINAL Advanced Micro Devices Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from –1 V to

27C1024-90

Abstract: 27C102490
Contextual Info: Advanced Micro Devices Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — 85 ns — Typical programming time of 8 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to

Product Selector Guide

Abstract: AM27C1024-255 am27c1024
Contextual Info: FINAL Am27C1024 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance available ■ Fast access time ■ 100% Flashrite programming — 55 ns maximum access time ■ Low power consumption — Typical programming time of 8 seconds

Contextual Info: Am27C1024 Advanced Micro Devices 1 Megabit 65,536 X 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • High Speed Flashrite programming ■ Fast access time — 100 ns ■ JEDEC-approved 40-pin DIP and 44 pad LCC pinouts ±10% power supply tolerance available

atmel 24c16a

Abstract: ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS
Contextual Info: GALEP-III Device List 2000-01-31 valid for version 1.17 page 1 of 1 D:\btl117.doc EPROM AMD AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 AM27C512 AM27C64 ATMEL AT27C/LV/BV010 AT27C/LV/BV020 AT27C/LV/BV040 AT27C/LV/BV256

27Cl28

Contextual Info: Advanced Micro Devices Am27C128 128 Kilobit 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from Vcc +1 V — 45 ns -1 V to ■ High noise Immunity ■ Low power consumption ■ Versatile features for simple interfacing

am27c128

Contextual Info: AMDÌ1 Am27C128 128 Kilobit 16 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — Speed options as fast as 45 ns ■ Low power consumption — 20 pA typical CMOS standby current ■ JEDEC-approved pinout ■ Single +5 V power supply