AMD DESIGN RETENTION MECHANISM Search Results

EIA/JEDEC JESD22-A110-B

Abstract: JESD22-A117 JESD22 JESD22a117
Contextual Info: Reliability Study AMD MirrorBit RELIABILITY STUDY White Paper OVERVIEW The MirrorBit™ cell is a breakthrough in NOR Flash memory cell architecture that enables a Flash memory product to hold twice as much data as standard Flash, without compromising device endurance, performance

EIA 364-60

Abstract: EIA-364-60 EIA-364-32 Socket-F Tyco AMD thermal design retention mechanism LGA1207 EIA-364-20 EIA-364-21 LF-LGA1207 LGA socket
Contextual Info: lever actuated Land Grid Array LGA 1207 position socket LGA1207 and LF-LGA1207 1. SCOPE 1.1. Content Product specification 108-78375 24 AUG 2006 Rev.A This specification covers performance, tests and quality requirements for the Tyco Electronics lever actuated Land Grid Array (LGA) socket F 1207.

AMD Flash Memory

Contextual Info: Section 4 Advantages of AM D’s 12.0 V Flash Mem ory Fam ily AM D’s Flash Mem ories Create a Defacto Industry Standard AMD is the first company to address the issue of device compatibility. In the world of Flash memories today, no two device offerings can be used as 100% compatible alter­

socket 940 pin package

Abstract: AMD top marking socket 940 AMD 940 Pin Package amd socket 940 pin grid array socket 940 pin AMD socket s1 amd 940 2576-6 UPGA
Contextual Info: AMD Socket 940 Design Specification Publication # 25766 Revision: 3.03 Issue Date: September 2003 2002, 2003 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or

AMD Socket S1 PIN LAYOUT

Abstract: amd athlon PIN LAYOUT voltage ground socket 940 pin package amd socket 940 PIN LAYOUT 940 SOCKET PIN LAYOUT AMD socket s1 amd FX PIN LAYOUT amd athlon PIN LAYOUT socket 940 socket s1
Contextual Info: AMD Socket 940 Qualification Plan Publication # 30353 Revision: 3.04 Issue Date: September 2003 2003 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or

Socket 754

Abstract: AMD athlon socket 754 AMD socket s1 amd athlon 64 socket 754 AMD Socket 754 socket s1 Advanced Micro Devices EIA 364-60 EIA-364-103 socket S1 AMD Socket S1 PIN LAYOUT
Contextual Info: Socket 754 Design and Qualification Requirements Publication # 24850 Rev: 3.07 Issue Date: August 2003 2001–2003 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or

amd socket 1207

Abstract: amd socket F 49Z0000028 Socket F 91B0000007 AMD thermal design retention mechanism
Contextual Info: Socket F 1207 Design Specification Publication # 31700 Revision: 1.04 Issue Date: July 2010 2004—2010 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. (“AMD”) products. AMD makes no representations or

amd am3 pin out

Abstract: 938-pin socket AM3 AM3 Processor Functional 938-pin functional socket am3 mounting amd am3 pin amd socket am3 91B0000090 socket am3 retention
Contextual Info: Socket AM3 Design Specification Publication # 40523 Revision: 1.06 Issue Date: April 2010 Advanced Micro Devices 2006—2010 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or

socket am2

Abstract: am2 socket pin out Socket AM2 Design Specification socket 940 am2 pin AM2 Processor Functional am2 specification socket am2 pins AM2 socket AMd functional am2 socket AM2 retention
Contextual Info: Socket AM2 Design Specification Publication # 31875 Revision: 3.00 Issue Date: May 2008 Advanced Micro Devices 2004–2008 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or

AM29F010B-120

Abstract: AM29F010B-90 AMD ORDERING AM29F010B PACKAGE
Contextual Info: Am29F010B Known Good Die Data Sheet Am29F010B Known Good Die Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

AMD ORDERING AM29F010B PACKAGE

Abstract: AM29F010B-120 AM29F010B-90
Contextual Info: Am29F010B Known Good Die Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

AM29F010B-120

Abstract: AM29F010B-90 AMD ORDERING AM29F010B PACKAGE
Contextual Info: Am29F010B Known Good Die Data Sheet Retired Product Am29F010B Known Good Die Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.

INCOMING Plate INSPECTION

Abstract: AM29F010B-120 AM29F010B-90 AM29F010
Contextual Info: Am29F010B KGD Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: CONDENSED AMD£I AmMCLOOXA 2 or 4 Megabyte 3.0 Volt-only Flash Miniature Card DISTINCTIVE CHARACTERISTICS • 2 or 4 Mbytes of addressable Flash memory ■ 2.7 V to 3.6 V, single power supply operation — Write and read voltage: 3.0 V -10/+20% — No additional supply current required for VPP

AM29F016D-120

Abstract: amd 2732 AMD 26244
Contextual Info: Am29F016D Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 Supplement (Retired Product) Am29F016D Known Good Die Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for

Contextual Info: AMD£I Am28F256 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase

AM28F020

Contextual Info: f !NAL AMDH Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase

AM28F020A

Contextual Info: FINAL Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access time

TDA 2051

Abstract: AM2864AE-255DC
Contextual Info: a Am2864AE Adva“ £ 8192 x 8-Bit Electrically Erasable PROM Devices DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Data Polling for end-of-write indication

sample code read and write flash memory

Abstract: AM28F010A
Contextual Info: FINAL Am28F010A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access time

AM9864

Abstract: AM2864BE-300/BXA
Contextual Info: a Am2864BE AdVMgo 8192 X 8-Bit Electrically Erasable PRO M Devices DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Ready/Busy pin and Data Polling for end-of-write

Contextual Info: a Am28F020A Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current

Contextual Info: a PRELIM INARY Am28F512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns maximum access lime ■ CMOS low power consum ption

CERAMIC LEADLESS CHIP CARRIER LCC 124

Abstract: AM28F512A
Contextual Info: FINAL Am28F512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time