AMELCO Search Results

Contextual Info: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT IΔVGS1-2/ΔT│=5µV/°C max. ULTRA LOW LEAKAGE IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS Case & Body 1 @ 25°C unless otherwise noted

Contextual Info: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current 10mA Maximum Temperatures Storage Temperature Range

Contextual Info: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71

TELEDYNE PHILBRICK

Abstract: Teledyne Semiconductor amelco TELEDYNE PHILBRICK V to F VOLTAGE TO FREQUENCY CONVERTER TELEDYNE TELEDYNE PHILBRICK converter philbrick TELEDYNE PHILBRICK f to v teledyne converters TelCom Semiconductor
Contextual Info: , Company Profile 1300 Terra Bella Avenue Mountain View, CA 94043-1836 TelCom Semiconductor, Inc. Company Profile THE COMPANY TelCom Semiconductor, Inc. designs and manufactures analog and mixed signal integrated circuits in five principal product families: thermal management,

Contextual Info: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 rDS on ≤ 30Ω LOW ON RESISTANCE tON ≤ 15ns FAST SWITCHING ABSOLUTE MAXIMUM RATINGS 2N SERIES 1 PN SERIES SST SERIES SOT-23 TOP VIEW @ 25 °C (unless otherwise stated)

id100

Contextual Info: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V ID100 ID101 Crss = 0.75pF TO-78 TOP VIEW TO-71 TOP VIEW REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS

Contextual Info: LS/3N165, LS/3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LS3N165, LS3N166 3N165, 3N166 LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA=25°C unless otherwise noted)

Contextual Info: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF TO-78 TOP VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated

ultra low igss pA

Contextual Info: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1

Contextual Info: J/SST111 SERIES SINGLE N-CHANNEL JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns ABSOLUTE MAXIMUM RATINGS1 SST SERIES SOT-23 TOP VIEW SOT-23 J SERIES TO-92 TOP VIEW @ 25 °C unless otherwise stated

mosfet 2n4351

Contextual Info: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 20mA HIGH GAIN gfs = 1000µS ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated 1 Maximum Temperatures Storage Temperature -55 to +150 °C

UNION CARBIDE

Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389

UNION CARBIDE

Contextual Info: 2N5018 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE 75Ω LOW ON RESISTANCE TO-18 TOP VIEW RATINGS1 ABSOLUTE MAXIMUM @ 25 °C unless otherwise stated S Maximum Temperatures Storage Temperature -55 to 150°C

SN7449

Abstract: 54175 SN7401 74L42 SN7437 SN74S40
Contextual Info: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type s listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a

Contextual Info: PAD SERIES PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE BVR ≥ -30V REVERSE CAPACITANCE Crss ≤ 2.0pF ABSOLUTE MAXIMUM RATINGS PAD1,2,5 PAD50 JPAD SSTPAD 1 @ 25 °C unless otherwise stated Maximum Temperatures

amelco

Abstract: LSK389B
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE Top View TO-71 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389

LSK186

Contextual Info: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate

LS352

Contextual Info: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS FEATURES HIGH GAIN hFE 200 @ 10µA - 1mA TIGHT VBE MATCHING IVBE1-VBE2I=0.2mV TYP. HIGH fT 275 MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C unless otherwise stated IC Collector Current 10mA Maximum Temperatures

Contextual Info: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM RATINGS U SERIES Gpg = 11.5dB NF = 2.7dB J SERIES TOP VIEW 1 @ 25 °C unless otherwise stated

Contextual Info: LS840 LS841 LS842 LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW NOISE en=8nV/Hz TYP. LOW LEAKAGE IG=10pA TYP. LOW DRIFT I VGS1-2/TI=5µV/ºC max. LOW OFFSET VOLTAGE IVGS1-2I=2mV TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C unless otherwise noted

Contextual Info: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE 2000 @ 1.0µA TYP. LOW OUTPUT CAPACITANCE COBO 2.0pF TIGHT VBE MATCHING IVBE1-VBE2I=0.2mV TYP. HIGH fT 100 MHz ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C unless otherwise stated

amelco

Contextual Info: DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ABSOLUTE MAXIMUM RATINGS CR≤0.2pF DPAD DPAD1 TO-72 Top View TO-78 Top View Case & Substrate 1 @ 25°C unless otherwise stated

amelco

Contextual Info: J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES rDS on ≤ 85 LOW ON RESISTANCE LOW GATE OPERATING CURRENT ABSOLUTE MAXIMUM RATINGS ID(off) = 10pA 1 @ 25 °C (unless otherwise stated) Maximum Temperatures SST SERIES

Contextual Info: DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ABSOLUTE MAXIMUM RATINGS ΔCR≤0.2pF DPAD DPAD1 TO-72 Top View TO-78 Top View Case & Substrate 1 @ 25°C unless otherwise stated