AMP. MOSFET 500 WATT Search Results

AN569

Abstract: MTP1N50E mtp1n
Contextual Info: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to

Contextual Info: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, the MOSFET is designed to

1N50E

Abstract: t1n50e MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 T1-N50E
Contextual Info: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage

t1n50e

Abstract: 1N50E T1-N50E 7-14-C MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 SMD310
Contextual Info: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage

transistor 1 j42

Abstract: transistor j42 nj TRANSISTOR 2L43 UF281
Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation

UF28156

Abstract: UF2815B L5 mosfet
Contextual Info: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation

3F TRANSISTOR

Abstract: F2801
Contextual Info: XY an AMP company r = RF MOSFET Power Transistor, 100 - 500 MHz 1 W, 28V UF2801 KI v2.00 Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Lower Noise Floor l 100 MHz to 500 MHz Operation l Common Source TO39 Package Configuration

Transistor Equivalent list

Abstract: "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos
Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, 5W, 28V UF2805B A B E Features l N-Channel Enhancement l DUOS Structure l Lower Capacitances Mode Device for Broadband v2.00 Operation 0 Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation

transistor v2w

Abstract: transistor C 2240 TRANSISTOR 500 PL031 TT 2240
Contextual Info: =z -z-= = =- * =s .- -a a-= = = an AMP company RF MOSFET Power Transistor, 500 - 1000 MHz IOW, 28V LF281 OA Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor

UF284OP

Contextual Info: an =y FE AMP comDanv RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF284OP Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor . . Absolute Maximum Ratings at 25°C

UF2815OJ

Contextual Info: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C

pulse transformer bv 070

Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
Contextual Info: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation

25 ohm semirigid

Abstract: capacitor 50uf UF2840G resistor 1.2k capacitor J 400
Contextual Info: -3= - -0-z =z 32 -z= .-me- an AMP company * = = RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF2840G v2.00 Features l N-Channel Enhancement l DMOS Structure l Lower Capacitances Mode Device for Broadband Operation l High Saturated Output Power l

IRF450

Abstract: mosfet IRF450
Contextual Info: PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 12 AMP 500 VOLTS 0.40Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate

UF28100M

Abstract: UF281OOM Amp. mosfet 500 watt ISS135 S80E
Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, lOOW, 28V UF281 OOM Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C

diode A249

Abstract: 2E12 3E12 SFFD450M SFFR450M frf450 irfm7450
Contextual Info: S I PRELIMINARY SFFR450M SFFD450M SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 10 AMP 500 VOLTS 0.60 Q RADIATION HARDENED N-CHANNEL MOSFET # Designer’s Data Sheet FEATURES: SFFR450M: 100KRad(Si) Gamma

IRF430

Contextual Info: PRELIMINARY SFF430/5 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 4.5 AMP 500 VOLTS Designer’s Data Sheet 1.6 Q N-CHANNEL POWER MOSFET FEATURES: Rugged construction with polysilicon gate

mosfet 24n50

Contextual Info: SFF24N50/3 SFF24N50/3T Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 24 AMP / 500 Volts 0.2 Ω N-Channel Power MOSFET DESIGNER’S DATA SHEET Features:

mosfet 24n50

Abstract: mosfet 24n50 transistor equivalent IXTH24N50 SSDI SFF
Contextual Info: SFF24N50/3 SFF24N50/3T Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 24 AMP / 500 Volts 0.2 Ω N-Channel Power MOSFET DESIGNER’S DATA SHEET Features:

IRF430

Contextual Info: SsDII PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 4.5 AMP 500 VOLTS 1.6 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with polysilicon gate

IRF440

Abstract: SFF440C 0-85Q
Contextual Info: Sspii PRELIMINARY SFF440C SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■

IRF450

Abstract: ID72
Contextual Info: PRELIMINARY SFF450/61 SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 13 AMP 500 VOLTS 0.40Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■ ■

IRF440

Abstract: SFF440M
Contextual Info: PRELIMINARY A SFF440M /SFF440Z SOLID STATE DEVICES, INC — 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate

IRF440

Abstract: SFF440
Contextual Info: §s§i PRELIMINARY SFF440 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: • • • • • • •