AN 366 FAIRCHILD SEMICONDUCTOR Search Results

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

POWER MOSFET CIRCUIT

Abstract: FDP030N06
Contextual Info: FDP030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

FDB029N06

Abstract: 60V dual N-Channel trench mosfet
Contextual Info: FDB029N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.1mΩ Features Description • RDS on = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FCH043N60 N-Channel SuperFET II MOSFET 600 V, 75 A, 43 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FDP030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FDB029N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.1 mΩ Features Description • RDS on = 2.4 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FDB029N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.1 mΩ Features Description • RDS on = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

FDI030N06

Abstract: a2801
Contextual Info: FDI030N06 tm N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

FDP030N06

Contextual Info: FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDI030N06 N-Channel tm PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FCD620N60ZF N-Channel SuperFET II FRFET® MOSFET 600 V, 7.3 A, 620 mΩ Features Description o SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: FAN6757— mWSaver PWM Controller Features Description • Single-Ended Topologies, such as Flyback and Forward Converters • mWSaver® Technology The FAN6757 is a next-generation Green Mode PWM controller with innovative mWSaver® technology, which dramatically reduces standby and no-load power

FQPF*7N65C APPLICATIONS

Contextual Info: FAN6757— mWSaver PWM Controller Features Description • Single-Ended Topologies, such as Flyback and Forward Converters • mWSaver™ Technology The FAN6757 is a next-generation Green Mode PWM controller with innovative mWSaver™ technology, which

Contextual Info: FAN6756A— mWSaver PWM Controller Features Description • Single-Ended Topologies, such as Flyback and Forward Converters • mWSaver™ Technology The FAN6756A is a next-generation Green Mode PWM controller with innovative mWSaver™ technology, which

6756M

Abstract: schematic diagram smps supply FAN6756 FAN6756MLMY ntc 80 0643
Contextual Info: FAN6756— mWSaver PWM Controller Features Description • Single-Ended Topologies, such as Flyback and Forward Converters • mWSaver™ Technology The FAN6756 is a next-generation Green Mode PWM controller with innovative mWSaver™ technology, which

6749ML

Abstract: FAN6748 SOIC127P600 FAN6749 FAN6749MLM
Contextual Info: FAN6749 Highly Integrated Ultra Green-Mode PWM Controller Features Description • •    High-Voltage Startup    Two-Level OCP, 56 ms Delay for Super Peak Load The FAN6749 highly integrated PWM controller enhances the performance of flyback converters. To

Contextual Info: FAN6749 Highly Integrated Ultra Green-Mode PWM Controller Features Description • •    High-Voltage Startup    Two-Level OCP, 56 ms Delay for Super Peak Load The FAN6749 highly integrated PWM controller enhances the performance of flyback converters. To

CA6V

Abstract: transistor SOT23 PJ6 AFM2 capacitor 470uf 25v 10K CA6V MOTOROLA DSP563XX architecture 5075BR subwoofer motherboard CR0805 DSPAUDIOEVMMB1
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSPAUDIOEVM Evaluation Board User’s Manual Order Number: DSPAUDEVMEBUM/D Revision 1, January 2003 This document contains information on a new product under development by Motorola. Motorola reserves the right to change or discontinue this product without notice.

Contextual Info: FAN6756AHL — mWSaver PWM Controller Features Description • • The FAN6756AHL is a next-generation Green Mode PWM controller with innovative mWSaver™ technology, which dramatically reduces standby and no-load power consumption, enabling compliance with worldwide

Contextual Info: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features tm General Description „ Max rDS on = 366mΩ at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,