AN-1199 NATIONAL Search Results

74123PC

Abstract: time delay circuit for ic 74123 RX2C pin DIAGRAM OF IC 74123 RX-2C 74123FC ic 74123 74123 time delay
Contextual Info: ’ NATIONAL SEHICOND {L O G IC } Ü2E D | b S O llS B □DbBôQD 123 4 | T- s / - / 7 CO N N ECTIO N DIAGRAM PINOUT A 54/74123 DUAL RETRIGGERABLE RESETTABLE MULTIVIBRATOR A l[7 jë jv c c B t|T ï C o ,[3 H Jcxi Q i|T 13]O i Q îU H Q 2 C X 2 [T D ESC R IP T IO N — Each half of the '123 features retriggerable capability, com­

DS8820

Contextual Info: DS78C20/DS88C20 £9 National Æm Semiconductor DS78C20/DS88C20 Dual CMOS Compatible Differential Line Receiver G eneral Description Features The DS78C20 and DS88C20 are high performance, dual differential, CMOS compatible line receivers for both bal­ anced and unbalanced digital data transmission. The inputs

431ac

Contextual Info: LM431A National Semiconductor LM431A Adjustable Precision Zener Shunt Regulator General Description Features The LM431A is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire tempera­ ture range of operation. The output voltage may be set at

LM308

Abstract: lm208 LM308N LM108 LM308 AN lm108h LM30SH LM308 typical applications LM108J
Contextual Info: LM108/LM208/LM308 National Semiconductor LM108/LM208/LM308 Operational Amplifiers General Description The LM108 series are precision operational amplifiers hav­ ing specifications a factor of ten better than FET amplifiers over a - 55°C to + 125°C temperature range.

b698 transistor

Abstract: B698 30PF DS3893A DS3893AV V20A
Contextual Info: DS3893A £3i National Semiconductor ü DS3893A BTL TURBOTRANSCEIVER General Description The bus driver is an open collector NPN with a Schottky diode in series to isolate the transistor output capacitance from the bus when the driver is in the inactive state. The

LCX652

Abstract: 74LCX652 74LCX652MSA 74LCX652MTC 74LCX652MTCX 74LCX652WM 74LCX652WMX M24B
Contextual Info: LCX652 National <ß Semiconductor 74LCX652 Low-Voltage Transceiver/Register with 5V Tolerant Inputs and Outputs General Description Features The LCX652 consists of bus transceiver circuits with D-type flip-flops, and control circuitry arranged for multiplexed

LM78L12ACH

Abstract: 1N4319 LM78L05ACH 78L05V
Contextual Info: LM78LXX National ÆÆ Semiconductor LM78LXX Series 3-Terminal Positive Regulators General Description Features The LM78LXX series of three terminal positive regulators is available with several fixed output voltages making them useful in a wide range of applications. When used as a zener diode/resistor combination replacement, the LM78LXX

3 band audio tone control

Contextual Info: LM1036 National Semiconductor LM1036 Dual DC Operated Tone/Volum e/Balance Circuit General Description Features The LM 1036 is a DC controlled tone b ass/tre b le , volum e and balance circuit for stereo a pplications in car radio, TV and audio systems. An additional control input a llow s loud­

portable dvd player

Abstract: portable dvd player power supply portable dvd player POWER SWITCH Toyota Engine Control electronic vehicle stability control electronic stability control cars
Contextual Info: Infotainment Applications Need for dynamic data integrity F-RAM memory protects data / system integrity against glitches such as sudden power loss, and records and stores dynamic data continuously, as required by today’s advanced car infotainment systems such as navigation

NORTEL PASSPORT 8600

Abstract: NORTEL accelar 8000 NORTEL PASSPORT 8000
Contextual Info: by Tony Rybczynski, Nortel Networks Layer 3 Switching The Enabler of IP-Optimized Networking Article Switching has conventionally been called a Layer 1 or at best a Layer 2 function. Circuit switching has been with us for years and is used heavily for remote on-demand data access. Layer 2 LAN

DS78LS120J

Abstract: DS78LS120 DS88LS120 DS88LS120J DS88LS120N RS423 DS7515 ttl 7499 DS751
Contextual Info: NATL SEfllCOND - CMEMORYJ IDE D | bSDllSb t i □ | %- DS78LS120/DS88LS120 Dual Differential Line Receiver Noise Filtering and Fail-Safe General Description The DS78LS120 and DS88LS120 are high performance, dual differential, TTL compatible line receivers for both bal­

1E14

Abstract: 2E12 FSYE923A0D FSYE923A0D1 FSYE923A0D3 FSYE923A0R
Contextual Info: FSYE923A0D, FSYE923A0R TM Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

1E14

Abstract: 2E12 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3
Contextual Info: FSYE23A0D, FSYE23A0R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

SMD TRANSISTOR br-37

Abstract: 1E14 2E12 FSYE923A0D FSYE923A0D1 FSYE923A0D3 FSYE923A0R
Contextual Info: FSYE923A0D, FSYE923A0R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSGYE130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR isCha l wer STs) tho yds erpoon, mitor, diadd, GR isCha l wer Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance

FSYE913A0R3

Abstract: 2E12 FSYE913A0D FSYE913A0D1 FSYE913A0D3 FSYE913A0R FSYE913A0R1
Contextual Info: FSYE913A0D, FSYE913A0R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

2E12

Abstract: 3E12 FSYE430D FSYE430D1 FSYE430D3 FSYE430R FSYE430R1 FSYE430R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYE430D, FSYE430R Data Sheet Title SYE 0D, YE4 R bt adian rded, GR sist Cha el wer OSTs) utho eyrds terrpoon, minctor, dian rded, GR sist Cha el Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a

2E12

Abstract: FSYE13A0D FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3
Contextual Info: FSYE13A0D, FSYE13A0R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSYE913A0D FSYE913A0D1 FSYE913A0D3 FSYE913A0R FSYE913A0R1
Contextual Info: FSYE913A0D, FSYE913A0R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

1E14

Abstract: 2E12 FSPYE134D1 FSPYE134R3 transistor smd 1E
Contextual Info: FSPYE134R, FSPYE134F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

Contextual Info: FSGYE234R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment.

1E14

Abstract: 2E12 FSGYE234D1 FSGYE234R3 FSGYE234R4
Contextual Info: FSGYE234R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment.

Contextual Info: FSGYE035R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both

1E14

Abstract: 2E12 FSGYE134D1 FSGYE134R3 FSGYE134R4
Contextual Info: FSGYE134R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both