AN-397 EQUIVALENT Search Results

HP5082-2835

Abstract: The Transistor Manual Japanese 1993 TRANSISTOR C-111 HP5082-2835 diode SCR PNP NPN emitter area electrostatic discharge transzorb i-v curve 3 Volt transzorb SCR Manual, General electric What is a TRANSZORB AD7893-10
Contextual Info: a ONE TECHNOLOGY WAY AN-397 APPLICATION NOTE • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Electrically Induced Damage to Standard Linear Integrated Circuits: The Most Common Causes and the Associated Fixes to Prevent Reoccurrence

FD333

Abstract: picoameter AN-397 ED-4701 V-250 transzorb i-v curve dual Symmetrical Transient Voltage Suppressors The Transistor Manual Japanese 1993 measuring scr characteristics curve tracer Digital ohm meter
Contextual Info: ANALOG ► DEVICES AN-397 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Electrically Induced Damage to Standard Linear Integrated Circuits: The Most Common Causes and the Associated Fixes to Prevent Reoccurrence

TMS320C6416 DSK

Abstract: avalon vhdl byteenable tms320c6416 emif AN-397 TMS320C6416 DSP Starter Kit DSK C6416 EP2S60 J201 TMS320C6416 avalon slave interface with pci master bus
Contextual Info: Interfacing to External Processors Application Note AN-397 1.0 Introduction Use Altera FPGA and CPLD devices and the Quartus® II software SOPC Builder feature to build memory mapped peripheral expansion systems and DSP coprocessing systems. These augment your current external

C24PH

Abstract: optimum hybrid design ,national semiconductor Linear c24-ph "Optimum Hybrid Design" R12PI c24phi Var1-M12 midcom 671-0017 AN3971
Contextual Info: National Semiconductor Application Note 397 Peter Single July 1985 Optimizing the interface between the phone line and a modem can significantly improve modem performance An increase of 6 dB in transmitted tone rejection can often be achieved Depending on the modem design this can provide

D7-210

Abstract: adsl psd mask Belfuse 0447 LQFP-32 S560-6600-AB 215DB 43KHz ericsson isdn ta Ericsson TN R4 Rsha
Contextual Info: PBM 39705/3LQ Preliminary Extended Line Driver for DSLAM applications Key Features • Using standard CMOS technologies • Seven power modes 0.4 W - 1 W enables optimized line card power dissipation • Typically 0.8 W (VBAT = 10 V) power dissipation during full rate COoperation and 0.2 W when the device is

PM7600

Abstract: Ericsson TN R4
Contextual Info: PBM 39705/3LQ Preliminary Extended Line Driver for DSLAM applications Key Features • Using standard CMOS technologies • Seven power modes 0.4W - 1W enables optimized line card power dissipation • Typically 0.8W (VBAT = 10V) power dissipation during full rate COoperation and 0.2W when the device is

et D149 diode

Abstract: D44 MARKING
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E 3 TM (Emulated EEPROM)

ICT PRC P1

Contextual Info: E Public PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other SEC/D Thomas Deng EFEIDEN Approved PKM 4000C SEC/D ThomasPINB Deng Series 1 (1) (3) No. Checked 1/1301-BMR63701 001 52- EN/LZT 146 397 UenSpecification Technical

JESD85

Contextual Info: Silicon Technology Reliability Vishay Siliconix ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 4083 355 397 483 2.561 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,

DTC114TCA

Abstract: resistor resistor datasheet DTC114TUA DTC114TE DTC114TKA DTC114TSA C114T
Contextual Info: Transistors Digital transistors built in resistor DTC114TE / DTC114TUA / DTC114TKA DTC114TCA / DTC114TSA FFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).

Fuse f03a

Abstract: MIL-PRF-15160 F02b F01A250V 312 fuse 2A equivalent M 393 4A31 F60C FUSES
Contextual Info: Approved to MIL-PRF-15160 MIL-PRF-15160/1 F01A FU SES MILType Designation FOIA 250V 1/200A FOIA 250V 1/100A FOIA 250V 1/32A F01A250V 1/16A F01A250V 1/1OA F01A250V 1/8A FOIA 250V 3/16A FOIA 250V 2/1 OA FOIA 250V 1/4A FOIA 250V3/8A FOIA 250V 4/1 OA F01A250V 1/2A

Contextual Info: il m a n -* i lC iO S & n il W p S H i S mm£ ? ^40 C o m m e rce D rive M o n tg o m e ry v ilie , PA 18936-1013 Tel: 215)631-9840 TC C 1417“25 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.4-1,7GHz POWER OUT 25W POWER GAIN

MARKING HRA

Abstract: 2SA27 4kw marking MARKING SA70
Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

SA70

Abstract: 2SA31
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES

2SA27

Contextual Info: MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

SA70

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-90 MB84VD22396EJ/VD22397EJ/VD22398EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM

m147 transistor

Abstract: 1029F M147 ci m147 SD1868
Contextual Info: Hi f I r l / C lU O J v f I If P ro g re s s P o w ered b y T ec h no log y 140 Com m erce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 SD1868 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.6-1.65GHz POWER OUT

Contextual Info: A _ i m F » AM PM OOU Wire Lock Connectors Catalog 29 6 112 Revised 3-97 Prod uct Facts • One piece, thru-hole, “ poke home” wire-to-board con­ nector offers fast and easy wire termination. ■ Single row, right-angle and vertical configurations avail­

HSMBJ5917B

Abstract: 1N5913B 1N5956B HSMBJ5913B HSMBJ5914B HSMBJ5915B HSMBJ5916B HSMBJ5918B HSMBJ5919B HSMBJ5956B
Contextual Info: HSMBJ5913B thru HSMBJ5956B 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax (480) 947-1503 FEATURES: • • • • Surface mount equivalent to 1N5913B thru 1N5956B Popular HSMBJ Package outline-Small and Rugged Zener voltage 3.3V to 200V

1N5913B

Abstract: 1N5956B HSMBJ5913B HSMBJ5914B HSMBJ5915B HSMBJ5916B HSMBJ5917B HSMBJ5918B HSMBJ5919B HSMBJ5956B
Contextual Info: HSMBJ5913B thru HSMBJ5956B 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 602 941-6300 Fax (602) 947-1503 FEATURES: • • • • Surface mount equivalent to 1N5913B thru 1N5956B Popular HSMBJ Package outline-Small and Rugged Zener voltage 3.3V to 200V

Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

marking w5c

Abstract: 107a capacitor marking code capacitor tantalum 107a
Contextual Info: A COMPANY TYPE 140D, 141D W et Tantalum C apacitors OF SPRAGUE T S in te re d A node T a n t a l e x C a p ac ito rs For O p e ra tio n to + 17 5 C FEATURES A variety of case styles are available; seven combinations of terminal arrangem ents and mounting arrangem ents are

LMV7231

Abstract: L7231SQ
Contextual Info: LMV7231 www.ti.com SNOSB45D – FEBRUARY 2010 – REVISED DECEMBER 2010 LMV7231 Hex Window Comparator with 1.5% Precision and 400mV Reference Check for Samples: LMV7231 FEATURES 1 • 2 • • • • • • • For VS = 3.3V ±10%, Typical unless otherwise

c124e

Abstract: DTC124ECA
Contextual Info: Transistors Digital transistors built-in resistors DTC124EE / DTC124EUA / DTC124EKA DTC124ECA / DTC124ESA • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent c ir­