AN-475 NATIONAL Search Results

2222C

Abstract: BD944 945F
Contextual Info: BD943F; BD945F BD947F PHILIPS INT ER NATIONAL 5fc,E ] • 711D02b D O ^ O T A fiTT M P H I N T -S l'O l SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F.

Siemens MC75

Abstract: MC75 siemens MC75 Common PCN Handset Specification Phase 2 v4.2 GSM0408 SM20 ATS10 C346 UE 3 0202 ATD1234567
Contextual Info: MC75 Siemens Cellular Engine Version: DocId: 01.001 MC75_ATC_V01.001 AT Command Set s MC75 AT Command Set s Document Name: MC75 AT Command Set Version: 01.001 Date: June 2, 2005 DocId: MC75_ATC_V01.001 Status Confidential / Released General Notes Product is deemed accepted by recipient and is provided without interface to recipient’s products. The documentation and/or product are provided for testing, evaluation, integration and information purposes. The documentation and/or product are provided on an “as is” basis only and may contain deficiencies or inadequacies. The

NL10309

Abstract: National Electronics 19.4 kw POWER SUPPLY
Contextual Info: NATIONAL The National NL10309 is a water cooled triode for use in industrial RF generators. The metal-ceramic envelope construction allows higher processing temperatures yielding better outgassing, higher reliability and higher maximum seal temperatures. The internal helical water cooling coil is an integral part of the tube anode. Incorporation of the exclusive "K" grid provides a generous safety factor in grid dissipation

LM26480

Abstract: ensw1 woodward AN1858 power supply woodward
Contextual Info: National Semiconductor Application Note 1858 John Woodward September 23, 2008 Application Manual GENERAL DESCRIPTION The LM26484 is a multi-function, configurable Power Management Unit. This device integrates two highly efficient 2.0A step-down DC/DC converters, one LDO Controller, a POR

sot363 voltage controller

Abstract: 402R6 smd mosfet sot-363
Contextual Info: LM26484 Application Note 1858 LM26484 Power Management Unit Evaluation Board Application Note Literature Number: SNVA350A National Semiconductor Application Note 1858 John Woodward November 4, 2009 Application Manual GENERAL DESCRIPTION The LM26484 is a multi-function, configurable Power Management Unit. This device integrates two highly efficient 2.0A

db9 connector

Contextual Info: National Semiconductor DS8934 V.34 Serial Port 5 X 3 Driver/Receiver General Description Features The DS8934 is a 5 driver X 3 receiver device optimized to provide a single chip solution for an asynchronous V.34 V.FAST modem serial port. The TIA/EIA-423-B (V.10) single-ended drivers are compatible with EIA/TIA-232-E (V.28)

JMK316B7226ML-T

Abstract: erb21b5c2e150jdx1l AN1858 ERB21B5C2E8R2CDX1L power supply woodward ensw1 GRM21BR71A106KE51L LM26480 LM26484SQ DAP 002 regulator
Contextual Info: National Semiconductor Application Note 1858 John Woodward November 4, 2009 Application Manual GENERAL DESCRIPTION The LM26484 is a multi-function, configurable Power Management Unit. This device integrates two highly efficient 2.0A step-down DC/DC converters, one LDO Controller, a POR

Contextual Info: DSS933 National Semiconductor & DS8933 V.34 Serial Port 2 X 1 Driver/Receiver General Description Features The DS8933 is a 2 driver X 1 receiver device optimized to provide a two chip solution for a synchronous V.FAST V.34 modem serial port when used with the DS8934 5 driver X 3

P0846SNL

Abstract: code l48 LM267X P0841SNL P0849NL P0849SNL 5309130 P0848NL
Contextual Info: THT/SMT POWER INDUCTORS Toroid - Designed for National’s 260kHz Simple Switcher Tested and recommended by National Semiconductor for the LM267X series Base material meets flammability requirements of UL 94V-0 Available in surface mount and through hole versions

Contextual Info: THT/SMT POWER INDUCTORS Toroid - Designed for National’s 260kHz Simple Switcher Tested and recommended by National Semiconductor for the LM267X series Base material meets flammability requirements of UL 94V-0 Available in surface mount and through hole versions

DS36C27

Abstract: DS36C280 DS36C280M DS36C280N DS36C280T DS36C280TM DS36C280TN M08A 120521-1
Contextual Info: DS36C280 National Semiconductor DS36C280 Slew Rate Controlled CMOS EIA-RS-485 Transceiver General Description Features The DS36C280 is a low power differential bus/line trans­ ceiver designed to meet the requirements of RS-485 Stan­ dard for multipoint data transmission. In addition, it is com­

TO5 Lead Info

Contextual Info: DS3686 £ 9 National ÆÆ Semiconductor DS3686 Dual Positive Voltage Relay Driver General Description The DS3686 is a high voltage/current positive voltage relay driver having many features not available in present relay drivers. PNP inputs provide both TTL/LS compatibility and high in­

Contextual Info: Inductors Designed for National’s 50 kHz Simple Switcher Designed for use with National’s device numbers LM2574/LM2575/LM2576 Base material meets flammability requirements of UL 94V-0 Performance verified by National Semiconductor Electrical Specifications @ 25°C— Operating Temperature -40° to +130° C

63E07

Abstract: 31 band graphic equalizer Graphic Equalizer Audio Amplifiers audio circuit collection mfb bandpass filter 85E-11 V/63E07
Contextual Info: Signal Conditioning: Audio Amplifiers Texas Instruments Incorporated An audio circuit collection, Part 3 By Bruce Carter Figure 1. Simulated inductor circuit Advanced Linear Products, Op Amp Applications Introduction +VCC This is the third in a series of articles on single-supply audio

CS83C92

Abstract: CS83C92A CS83C92C CS83C92C-CL
Contextual Info: ne s « "1»2 m mÆ BÆ ÊF«ÆÊ«Êm m a r v m m CS83C92A ^ mm^ ^ m mmtm CS83C92C Semiconductor Corporation Coaxial Transceiver Interface General Description Features The • Implemented in High Voltage, Low Power CMOS • Compatible with National’s DP8392A

PE-53818Snl

Abstract: PE-53829NL PE-54041NL PE-54039 pe-54040snl PE-54037NL pe-53818nl PE-54043NL KM10 equivalent PE-53831SNL
Contextual Info: THT/SMT POWER INDUCTORS Toroid - Designed for National’s 150kHz Simple Switcher Tested and recommended by National Semiconductor Base material meets flammability requirements of UL 94V-0 Available in surface mount and through hole versions Electrical Specifications @ 25°C— Operating Temperature -40° to +130° C 7

NDB6050

Abstract: NDP6050 js35
Contextual Info: Na t i o n a l March 1996 Semiconductor" N DP6050/ NDB6050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: Pulse Jack Inductors Designed for National’s 50 kHz Simple Switcher Electronics Designed for use with National’s device numbers LM2574/LM2575/LM2576 Base material meets flammability requirements of UL 94V-0 Performance verified by National Semiconductor

PE-53934NL

Abstract: pe-54040snl PE-54043NL pe-53831snl PE-53818Snl PE-53935NL pe-53829snl 5309130 PE-53824SNL 53932nl
Contextual Info: THT/SMT POWER INDUCTORS Toroid - Designed for National’s 150kHz Simple Switcher Tested and recommended by National Semiconductor Base material meets flammability requirements of UL 94V-0 Available in surface mount and through hole versions Electrical Specifications @ 25°C— Operating Temperature -40° to +130° C 7

Contextual Info: tß National Semiconductor 74VHC164 Serial-In, Parallel-Out Shift Register General Description Features The VHC164 is an advanced high-speed CMOS device fab­ ricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky

GS9007

Abstract: CLC007AJE 31-5329-72RFX CLC006 CLC007 MC10EL89
Contextual Info: Serial Digital Cable Driver HComlinear A National Semiconductor Company CLC007 APPLICATIONS: FEATURES: • Digital video routers, DAs, switchers • No external pull-down resistors required • 4fs c , 4:2:2 and 360Mbps serial digital video interfaces • Four outputs two pairs

transistor t04 76

Abstract: GV 475 diode transistor T04 NDB6060 004027S
Contextual Info: Na t io n a I Sem iconductor~ M arch 19 96 N DP6060/ NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

BT477

Abstract: BROOKTREE Bt475 BT475 BT477KP
Contextual Info: Bt475 Bt477 Distinguishing Features Applications 110, 80, 66, 50, 35 M H z Operation B t4 7 1/476/478 Pin Com patibility Pow er-D ow n M ode A ntisparkle Circuitry Analog O utput Com parators T riple 6-bit 8-bit D/A Converters 256 x 18 (24) C olor Palette RAM

MIL-C-39003H

Abstract: IN 004 Diode+C65+004
Contextual Info: SOLID-ELECTROLYTE TANTALUM CAPACITORS TYPE CAUTIONS 111 • This capacitor is polarized, do not apply reverse voltage. • The sum of peak value of AC and DC voltage should not exceed the rated voltage. • This catalog is designed for providing general information. Please