AN-806
Abstract: AN-807 AN-808
Contextual Info: OVERVIEW In this application note, the logical progression from the ideal transmission line to the real world of the long transmission line with its attendant losses and problems is made; specifically, the methods to determine the practicality of a certain
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AN-805
Abstract: DS26LS31 DS26LS31CN EIA-422 Calculating Power Dissipation
Contextual Info: INTRODUCTION In many board and system level designs, it is often necessary to determine the total power dissipated by the individual components of that application. This determination of total device power dissipation is important for two reasons. First, it can be used to select the power supply best suited to satisfy the needs of the application. And second, a power dissipation calculation facilitates the analysis of how the board or
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1969 fairchild
Abstract: AN-806 AN-807 AN-808 28767
Contextual Info: OVERVIEW This application note discusses the general characteristics of transmission lines and their derivations. Here, using a transmission line model, the important parameters of characteristics impedance and propagation delay are developed in terms of their physical and electrical parameters. This application note is a revised reprint of section two of the Fairchild
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Calculating Power Dissipation
Abstract: DS96F172CJ DS26LS31CN AN-303 AN-805 DS26LS31 EIA-422 calculation of switching frequency
Contextual Info: National Semiconductor Application Note 805 Joe Vo February 1992 Introduction current to develop a VOL with respect to ground. Conversely, when the device output is in the HIGH state, the output sources a load current sufficient to develop a VOH with a respect to ground. The power dissipated, then, by a single
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duobinary
Abstract: telephone* -"transmission lines" awg attenuation AN-806 AN-807 AN-808 CT-20 power semiconductor 1973
Contextual Info: National Semiconductor Application Note 808 Kenneth M. True March 1992 Overview references at the end of this application note provide a starting point to generate and evalute analytical expressions for a given cable. The effects on the LRCG line parameters, the variations in
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AN-806
Abstract: AN-807 AN-808 1969 fairchild AN-806 "cross reference"
Contextual Info: National Semiconductor Application Note 806 Kenneth M. True April 1992 Overview between the conductors. From electrostatic theory it is known that the voltage V produced by a static electric field E is given by This application note discusses the general characteristics of
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faraday formula
Abstract: AN-806 AN-807 AN-808
Contextual Info: National Semiconductor Application Note 806 Kenneth M. True April 1992 OVERVIEW This application note discusses the general characteristics of transmission lines and their derivations. Here, using a transmission line model, the important parameters of characteristics impedance and propagation delay are developed in
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AN-806
Abstract: AN-807 AN-808 ds9614 AN0113
Contextual Info: National Semiconductor Application Note 807 Kenneth M. True March 1992 OVERVIEW In this application note, the logical progression from the ideal transmission line to the real world of the long transmission line with its attendant losses and problems is made; specifically, the methods to determine the practicality of a certain
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Abstract: DS26LS31CN AN-805 DS26LS31 EIA-422
Contextual Info: National Semiconductor Application Note 805 Joe Vo February 1992 INTRODUCTION In many board and system level designs, it is often necessary to determine the total power dissipated by the individual components of that application. This determination of total
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AN-807
Abstract: DS9614 RHOS COMPLIANCE AN-806 AN-808 DS75110A DS75114
Contextual Info: National Semiconductor Application Note 807 Kenneth M. True March 1992 Overview transmission line having a characteristic resistance, R0. Because the relationship of VIN to IIN is known as VIN = R0 IIN, the lossless transmission line can be replaced with a resistor
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AN-806
Abstract: AN-807 AN-808
Contextual Info: OVERVIEW This application note explores another important transmission line characteristic, the reflection coefficient. This concept is combined with the material in AN-806 to present graphical and analytical methods for determining the voltages and currents at any point on a line with respect to distance and time. The effects of various source resistances
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AN-806
Abstract: AN-807 AN-808 1969 fairchild
Contextual Info: National Semiconductor Application Note 806 Kenneth M. True April 1992 OVERVIEW This application note discusses the general characteristics of transmission lines and their derivations. Here, using a transmission line model, the important parameters of characteristics impedance and propagation delay are developed in
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AN-808)
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DS26LS31CN
Abstract: AN-805 DS26LS31 EIA-422
Contextual Info: National Semiconductor Application Note 805 Joe Vo February 1992 INTRODUCTION In many board and system level designs, it is often necessary to determine the total power dissipated by the individual components of that application. This determination of total
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