AN1001 EQUIVALENT Search Results
AN1001 EQUIVALENT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TMP89FM42LUG |
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8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B |
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TMP89FS28LFG |
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8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP176-P-2020-0.40D |
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TMP89FS62BUG |
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8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 |
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TMP89FM42KUG |
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8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B |
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TMP89FH46LDUG |
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8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D |
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AN1001 EQUIVALENT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AN1001
Abstract: Si6436DQ Si9936DY an1001 siliconix
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AN1001 AN1001 Si6436DQ Si9936DY an1001 siliconix | |
TSSOP-8 footprint
Abstract: AN1001 Si6436DQ Si9936DY SI9936
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AN1001 01-Sep-93 TSSOP-8 footprint AN1001 Si6436DQ Si9936DY SI9936 | |
AN1001
Abstract: TSSOP-8 footprint Si6436DQ Si9936DY
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AN1001 01-Sep-93 AN1001 TSSOP-8 footprint Si6436DQ Si9936DY | |
TSSOP-8 footprint
Abstract: MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY
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AN1001 12-Dec-03 TSSOP-8 footprint MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY | |
AN1001
Abstract: Si6436DQ Si9936DY si9936 640 1 TSSOP8
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AN1001 MS-012 S-00164--Rev. 31-Jan-00 07-Jun-00 AN1001 Si6436DQ Si9936DY si9936 640 1 TSSOP8 | |
phase lock loop application note 1001
Abstract: AN012473-1 Roland e 30 schematic AN1001 varactor diode fm lmx2315 Passive filters datasheet realization of Passive filters datasheet AN-1001 IS-54
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thyristor scr oscillator circuit
Abstract: shockley diode DIAC EQUIVALENT circuit diac with triac ac speed control SCHEMATIC circuit scr oscillator shockley diode application DIAC EQUIVALENT scr firing METHODS Thyristor Shockley diac triac control circuit motor
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dual output transformer with input 24v
Abstract: equivalent circuit autotransformer electronic transformer 24v 79R79 24v transformer windings MV-GX Series AN1001 equivalent autotransformer MAX1856 MAX774
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MAX1856 MAX774: com/an1001 AN1001, APP1001, Appnote1001, dual output transformer with input 24v equivalent circuit autotransformer electronic transformer 24v 79R79 24v transformer windings MV-GX Series AN1001 equivalent autotransformer MAX774 | |
5252 F 1009 "integrated circuit"
Abstract: LMX1601 LMX2336 892063 6301k lmx2315 qpsk modulation experiment discussion PHILIPS RF databook 1980 AN1001 AN-1052
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Contextual Info: m I 1 SEC UPB581A UPB581B UPB581C UPB581P DIVIDE-BY-2 PRESCALER OUTLINE DIMENSIONS FEATURES Units in mm O UTLIN E A08 • HIGH FREQUENCY OPERATION • • WIDE BAND OPERATION 9.404* MAX “ I*- 8.50<}> MAX — • SINGLE SUPPLY VOLTAGE: Vcc = 5 V ±10% • TWO SEPARATE IDENTICAL OUTPUTS |
OCR Scan |
UPB581A UPB581B UPB581C UPB581P UPB581 UPB581P) UPB581A) UPB581B) UPB581C) divis10 | |
SI6410DQContextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D |
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Si6410DQ Si6410DQ-T1-GE3 11-Mar-11 | |
Contextual Info: Si6928DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 4.0 0.050 at VGS = 4.5 V ± 3.4 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT D1 D2 TSSOP-8 8 D2 |
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Si6928DQ Si6928DQ-T1 Si6928DQ-T1-GE3 11-Mar-11 | |
Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8 |
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Si6415DQ Si6415DQ-T1 Si6415DQ-T1-GE3 11-Mar-11 | |
Contextual Info: Si6928DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 4.0 0.050 at VGS = 4.5 V ± 3.4 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT D1 D2 TSSOP-8 D1 1 |
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Si6928DQ Si6928DQ-T1 Si6928DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated |
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Si6469DQ Si6469DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
MOSFET TSSOP-8 dual n-channelContextual Info: Si6966EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V ± 5.2 0.040 at VGS = 2.5 V ± 4.5 • Halogen-free • ESD Protected: 4000 V RoHS COMPLIANT D1 D2 TSSOP-8 |
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Si6966EDQ Si6966EDG-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8 dual n-channel | |
Contextual Info: Si6993DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.031 at VGS = - 10 V - 4.7 0.048 at VGS = - 4.5 V - 3.8 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT APPLICATIONS • Load Switch |
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Si6993DQ Si6993DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V ± 5.5 0.055 at VGS = - 4.5 V ± 4.1 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S* G TSSOP-8 D 1 8 D S |
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Si6435ADQ Si6435ADQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2 |
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Si6963BDQ Si6963BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si6966DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 0.040 at VGS = 2.5 V 3.9 • Halogen-free Option Available • TrenchFET Power MOSFETs: 2.5 V Rated Pb-free Available |
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Si6966DQ Si6966DQ-T1 Si6966DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si6993DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.031 at VGS = - 10 V - 4.7 0.048 at VGS = - 4.5 V - 3.8 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT APPLICATIONS • Load Switch |
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Si6993DQ Si6993DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • Halogen-free Option Available • TrenchFET Power MOSFETs |
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Si6968BEDQ Si6968BEDQ-T1 Si6968BEDQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
tssop 38 footprintContextual Info: Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = - 4.5 V ± 4.6 0.050 at VGS = - 2.5 V ± 3.8 0.075 at VGS = - 1.8 V ± 3.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated |
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Si6969DQ Si6969DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 tssop 38 footprint | |
Contextual Info: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2 |
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Si6963BDQ Si6963BDQ-T1-GE3 70electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |