AN13842 Search Results

CY62126EV30

Abstract: CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV18 CY62137FV30 CY62146E CY62146EV30 CY62147EV30 CY62157EV30
Contextual Info: Recommended Usage of Byte Enables in Standby Mode for 90 nm x16 MoBL SRAMs AN13842 Author: Anuj Chakrapani Associated Project: No Associated Part Family: 90 nm x16 MoBL® SRAMs Software Version: None Associated Application Notes: None Application Note Abstract

CY62157EV30

Abstract: 90 nm CMOS CY62147EV18 CY62147EV30 CY62126EV30 CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV18 CY62137FV30
Contextual Info: Clarification on Byte Enable Operation in Standby Mode for 90 nm x16 MoBL SRAMs AN13842 Author: Anuj Chakrapani Associated Project: No Associated Part Family: 90 nm x16 MoBL SRAMs GET FREE SAMPLES HERE Software Version: None Associated Application Notes: None

Contextual Info: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A

CY62137EV30

Contextual Info: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

AN1064

Abstract: CY62167E 1M x 16 SRAM
Contextual Info: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)

00107

Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

CY62157EV30LL-45BVXI

Abstract: TSOP 48 thermal resistance
Contextual Info: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges

55BV

Abstract: AN1064 CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL
Contextual Info: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is

AN1064

Abstract: CY62126DV30 CY62126EV30 CY62126EV30LL-45BVXI CY62126EV30LL-45ZSXI CY62126EV30LL-55BVXE
Contextual Info: MoBL ,CY62126EV30 1-Mbit 64K x 16 Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits[1]. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features cations such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when

Contextual Info: CY62136FV30 MoBL 2 Mbit 128K x 16 Static RAM Features • automatic power down feature that significantly reduces power consumption by 90 percent when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE

Contextual Info: CY62167EV18 MoBL 16 Mbit 1M x 16 Static RAM Features by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features consumption when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output

Contextual Info: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1

Contextual Info: CY62137FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62137CV/CV25/CV30/CV33,

Contextual Info: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM Features Functional Description • Very high speed: 55 ns ■ Wide voltage range: 1.65 V to 2.25 V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A

AN1064

Abstract: CY62137EV30 CY62137FV30 CY62137FV30LL CY62137V
Contextual Info: CY62137FV30 MoBL 2-Mbit 128K x 16 Static RAM is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C

Contextual Info: CY62147EV18 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an

Contextual Info: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM is ideal for providing More Battery Life™ (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the

Contextual Info: CY62146E MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE

AN1064

Abstract: CY62136EV30 CY62136FV30 CY62136FV30LL CY62136V
Contextual Info: CY62136FV30 MoBL 2 Mbit 128K x 16 Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power