ANAREN RFP 50 OHM Search Results

Anaren rfp 50 ohm resistor

Abstract: 4y25 marking code 4n 4Y15 4Y12
Contextual Info: NOTES: 1. OPERATING TEM PERATURE: -5 5 °C TO + I2 5 °C . SEE CHART 2. DESIGNED PORTIONS 3. TAPE AND (SEE TAPE ï 0 100Q. REVISIONS Q 75- P < 01 5 0 Li. 2 5 o ss 0 TO MEET OR EXCEED AP P LIC A B LE OF M IL -E -5 4 0 0 & M IL -R -5 5 3 4 2 . REEL SIZE 12 MM.

Contextual Info: 50 Watts, 100 Ω Flanged Resistors Model RFP-50-100RCG Flanged Resistors General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead s : Features Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver (.005” thk)

Contextual Info: 150 Watts, 100 Ω Flanged Resistors Model RFP-150-100RJ Flanged Resistors General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead s : Features Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290

Contextual Info: 40 Watts, 100 Ω Flanged Resistors Model RFP-40-100RE Flanged Resistors General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead s : Features Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver (.005” thk)

Contextual Info: 150 Watts, 100 Ω Flanged Resistors Model RFP-150-100RCGF Flanged Resistors General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver .005” thk

Contextual Info: 100 Watts, 100 Ω Flanged Resistors Model RFP-100-100RW Flanged Resistors General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead s : Features Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290

Contextual Info: 150 Watts, 100 Ω Flanged Resistors Model RFP-150-100RL Flanged Resistors General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead s : Features Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290

Contextual Info: 100 Watts, 100 Ω Flanged Resistors Model RFP-100-100RE Flanged Resistors General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead s : Features Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290

5 watts ceramic resistor

Contextual Info: 40 Watts, 100 Ω Flanged Resistors Model RFP-40-100RH Flanged Resistors General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead s : Features Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver (.005” thk)

20H100

Abstract: 5 watts ceramic resistor
Contextual Info: 20 Watts, 100 Ω Flanged Resistors Model RFP-20-100RP Flanged Resistors General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead s : Features Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver (.005” thk)

RFP-250-100RM

Abstract: Anaren rfp
Contextual Info: 250 Watts, 100 Ω Flanged Resistors Model RFP-250-100RM Flanged Resistors General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver .005” thk

RFP-100-100RH

Contextual Info: 100 Watts, 100 Ω Flanged Resistors Model RFP-100-100RH Flanged Resistors General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead s : Features Thick film Beryllium oxide ceramic Alumina ceramic Copper, nickel plated per QQ-N-290

J1126

Abstract: Soshin HYB0750 J16-36 GSC268-HYB0750 A114 A115 AN1977 AN1987 Nippon chemi JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MDE6IC7120N Rev. 0, 10/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC7120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 768 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MDE6IC7120N Rev. 0, 10/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC7120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 768 MHz. This multi - stage

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA