ANSI S 2.19 Search Results

GR-63-CORE

Abstract: XMT5370622 5968-1101E 70950A
Contextual Info: XMT5370622 Characterization Report on 622 Mb/s Logic Interface Laser Transmitter for OC12/STM4 Preliminary Application Note 1148 Introduction The XMT5370622 laser transmitter is a high performance, uncooled optical transmitter for ITU-T Recommendation G.957 SDH and ANSI SONET

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK CASE 369–07 ISSUE M DATE 01/02/2000 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 DIM A B C D E F G H J K R S V A 1 2 3 S –T– K SEATING

TO-251 footprint

Abstract: On semiconductor date Code dpak YEAR A TO-251 Outline 369D 369D-01
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK−3 SINGLE GAUGE CASE 369D−01 ISSUE B DATE 03 DEC 2003 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE

Contextual Info: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 626 CASE OUTLINES AND PACKAGE DIMENSIONS AXIAL LEAD, DO−41 CASE 59−10 ISSUE S B K D F A SCALE 1:1 F DATE 01/28/2002 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.

14e471

Abstract: 10e471 14E471K 10e271 10e471k 14e391k VZ14D511K 10E391K sincera 14D431K 7D220K
Contextual Info: W O R L D P R O D U C M e t a l O x i d e Va r i s t o r s WORLD PRODUCTS, INC. T S World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 Metal Oxide Varistors ISO 9002:1994 EN ISO 9002:1994; BS EN ISO 9002:1994; ANSI/ASQ Q9002:1994

On semiconductor date Code dpak YEAR A

Abstract: 175AA CASE 175AA-01 On semiconductor date Code dpak
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK 5, CENTER LEAD CROP CASE 175AA−01 ISSUE A DATE 13 SEP 2004 SCALE 1:1 −T− SEATING PLANE C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R R1 Z A S 1 2 3 4 5

On semiconductor date Code dpak YEAR A

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK SINGLE GAUGE CASE 369C ISSUE O 4 DATE 24 SEP 2001 1 2 3 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE -T- E R 4 Z A S 1 2 3 U K

369A-13

Abstract: MT1 MT2 GATE
Contextual Info: –T– C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G STYLE 1: PIN 1. 2. 3. 4. 2 PL 0.13 0.005 BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4.

369A-13

Abstract: 13AB 13-AB On semiconductor date Code dpak YEAR A
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK CASE 369A–13 ISSUE AB DATE 07/27/2001 SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE –T– E R 4 Z A S 1 2 3 U K F J L H D 2 PL

369A-13

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK CASE 369A–13 ISSUE AA DATE 01/02/2000 SCALE 1:1 –T– C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G STYLE 1:

C-0120

Contextual Info: T F TMos Package Outlines - A - ► \ 1 C 1 i I t T t- E - * l •*— D 2 PL I s e a t in g p la n e NOTES. 1. DIM ENSIONING AND TOLERANCING PER ANSI Y14 5M, 1982 2 CONTROLLING DIMENSION INCH 3. ALL RULES AND NOTES ASSOCIATED WITH STYLE 3. PIN 1 GATE

SOD123FL

Abstract: transistor y 5910
Contextual Info: Package Outline Dimensions For information on tape and reel packaging specifications, please download or order the ON Semiconductor Tape and Reel Packaging Specification Brochure part number BRD8011/D . The PDF is available on the ON Semiconductor website at: .

Contextual Info: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 3356 CASE OUTLINES AND PACKAGE DIMENSIONS TO–92 TO–226 CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R

ON semiconductor 340g

Contextual Info: NTHS5443T1 Product Preview P-Channel 2.5 V G-S MOSFET http://onsemi.com S G D PRODUCT SUMMARY VDS (V) –20 RDS(on) (Ω) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 P–Channel MOSFET ChipFET CASE 1206A STYLE 1

K 751

Abstract: NTMDC02
Contextual Info: NTMD7C02 Power MOSFET 9.5 Amps, 20 Volts N-Ch 4 Amps, 20 Volts (P-Ch) Complementary SO–8 http://onsemi.com MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol N P Unit Drain–to–Source Voltage VDSS 20 –20 Vdc Gate–to–Source Voltage VGS

Contextual Info: CHAPTER 3 Case Outlines and Package Dimensions http://onsemi.com 350 CASE OUTLINES AND PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA −T− B F T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL

Contextual Info: NTHS5404T1 Product Preview N-Channel 2.5 V G-S MOSFET http://onsemi.com D G S PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.030 @ VGS = 4.5 V "7.2 0.045 @ VGS = 2.5 V "5.9 N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating

Contextual Info: NTHS5441T1 Product Preview P-Channel 2.5 V G-S MOSFET http://onsemi.com S G D PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 P–Channel MOSFET ChipFET CASE 1206A STYLE 1

Contextual Info: NTGS3446T1 Power MOSFET 5.3 Amps, 20 Volts N–Channel TSOP–6 Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature

Contextual Info: NTD3055-094 Advance Information Power MOSFET 12 Amps, 60 Volts N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 12 AMPERES 60 VOLTS RDS on = 94 mΩ

Contextual Info: NGD15N41CL Product Preview Ignition IGBT 15 Amps, 410 Volts N–Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

Contextual Info: NTHD5903T1 Product Preview Dual P-Channel 2.5 V G-S MOSFET http://onsemi.com S1 S2 G2 G1 PRODUCT SUMMARY VDS (V) –20 D2 D1 rDS(on) (Ω) ID (A) 0.155 @ VGS = –4.5 V "2.9 0.180 @ VGS = –3.6 V "2.7 0.260 @ VGS = –2.5 V "2.2 P–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

F 5M 365 R

Contextual Info: NTHD5904T1 Product Preview Dual N-Channel 2.5 V G-S MOSFET http://onsemi.com D2 D1 G2 G1 VDS (V) 20 S2 S1 PRODUCT SUMMARY rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 N–Channel MOSFET N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

A6 TSOP-6

Contextual Info: NTHD5902T1 Product Preview Dual N-Channel 30 V D-S MOSFET http://onsemi.com D1 D2 G1 G2 PRODUCT SUMMARY S1 VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 S2 N–Channel MOSFET N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)