AO18 Search Results

Contextual Info: MB88344PFV 1/2 IL16 C-MOS D/A CONVERTER 25 AO28 26 AO29 27 AO30 28 AO31 VCC 29 NC 30 VDD2 31 VSS2 32 33 AO32 34 AO33 35 AO34 36 AO35 —TOP VIEW— AO6 43 18 AO21 AO7 44 17 AO20 AO8 45 16 AO19 AO9 46 15 AO18 AO10 47 14 AO17 AO11 48 13 AO16 AO15 12 19 AO22

Contextual Info: IDT7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 15ns (max.)

ba 5937 fp

Contextual Info: PRODUCT PREVIEW in te l FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT 28F800F3, 28F160F3 Includes Extended and Automotive Temperature Specifications • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads

Contextual Info: a WHITE /MICROELECTRONICS W PS512K32-XPJX 512Kx32 SRAM MODULE FEATURES • A c c e s s T i m e s o f 1 5 , 1 7 , 2 0, 2 5 n s ■ T TL C o m p a t i b l e In p u ts a n d C M O S O u tp u t s ■ P a c k a g in g ■ 5 V o l t P o w e r S u p p ly • 68 Lead, P la s tic PLCC, 2 5 . 1 5 m m 0 .9 9 0 inch sq u a re

Contextual Info: a WMF512K8-XXX5 WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC FLASH, SM D 5962-96692 FEATURES • A ccess Tim es of 70, 90, 120, 150ns ■ Organized as 512Kx8 ■ Packaging • 32 pin, Herm etic Ceramic, 0.600" DIP Package 300 • 3 2 lead, Herm etic Ceram ic, 0.400" S O J (Package 101)

Contextual Info: a WHITE /MICROELECTRONICS WSF512K16-XXX 512Kx16SRAM /FLASH MODULE, S M D 5962-96901 FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 35ns S R A M and 90ns (FLASH) ■ 10,000 E rase/Program Cycles ■ A ccess Tim es of 70ns (SRAM) and 120ns (FLASH)

A14U

Contextual Info: a WMS512K8V-XXX WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC SRAM PRELIMINARY* FEATURES • A c c e s s T i m e s 15, 17, 2 0 n s Low Power CMOS ■ M IL - S T D - 8 8 3 C o m p l i a n t D e v ic e s A v a i l a b l e L o w V o l t a g e O p e ra tio n : ■

Contextual Info: a WS1M32-XG3X WHITE /MICROELECTRONICS 1Mx32 SRAM MODULE FEATURES • A c c e s s T im e s of 17, 20, 25ns Low Pow er CM OS ■ 84 lead, 28mm CQFP, Packag e 511 Built-in Decoupling Caps and M u ltip le Ground Pins fo r Low Noise Operation ■ Organized as tw o banks of 5 1 2K x3 2 , U ser C o nfig urable as

HY 1602

Contextual Info: y j M/HITE MICROELECTRONICS 512Kx8 SRAM P R E LIM IN A R Y WPS512K8-XRJX ’ PLASTIC PLUS FEATURES FIG. 1 • Access Times of 15, 20, 25nS PIN C O N FIG U R ATIO N TOP VIEW AOC 1 ' W ■ Standard Commercial Off-The-Shelf (COTS Memory Devices for Extended Temperature Range

FD11O

Contextual Info: YZÀ WSF512K16-XXX I/WHITE / M I C R O E L E C T R O N I C S 512Kx16 SRAM/FLASH MODULE P R E L IM IN A R Y • FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 35nS S R A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A ccess Tim es of 70nS (SR A M ) and 120nS (FLASH)

Contextual Info: WMF512K8-XXX5 WHITE /M IC R O E L E C T R O N IC S 512 Kx 8 MONOLITHIC FLASH PRELIM IN ARY* FEATURES • Organized as 512Kx8 ■ Access Times of 70, 9 0 ,1 2 0 and 150nS ■ Com m ercial, Industrial and M ilitary Tem perature Ranges ■ Packaging • 32 pin, Hermetic Ceram ic, 0.600" DIP Package 300

Contextual Info: a WHITE /MICROELECTRONICS WF512K32-XXX5 512Kx32 5V FLASH M ODULE, SM D 5962-94612 FEATURES • A ccess Tim es of 70, 9 0 , 1 2 0 , 150ns ■ O rganized as 512Kx32 ■ Packaging ■ C om m ercial, Ind ustria l and M ilita r y T e m pe ratu re Ranges • 66 -pin, PGA Type, 1.075 inch square, H erm etic

Contextual Info: a WHITE /MICROELECTRONICS 512Kx48SRAM MODULE WS512K48-XG4WX ADVANCED* FEATURES • ■ ■ ■ A ccess Tim es 17, 20, 25, 35ns ■ 2V D ata R etention Device Packaging: ■ TTL C om p atible Inputs and O utputs • 116 Lead, 40.0m m H e rm e tic CQFP Package 504

512K8

Contextual Info: TT WMS512K8-XXX M/HITE /MICROELECTRONICS 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES 32 pin, Rectangular Ceram ic Leadless Chip Carrier Package 601 • A ccess Tim es 15,17, 20, 25, 35, 45, 55ns ■ MIL-STD-883 Com pliant D evices A vailab le Com m ercial, Industrial and M ilita ry Tem perature Range

Contextual Info: T T WS512K32BV-XCJCE M/HITE /M ICROELECTRONICS 512Kx32 3.3V SRAM MODULE ADVANCED* FEATURES • Access Times of 15,17, 20ns Commercial Temperature Range ■ Low Voltage Operation: TTL Compatible Inputs and Outputs •3.3V ±10% Power Supply Fully Static Operation:

Contextual Info: !. f WS512K32-XCJC WHITE /M ICROELECTRONICS 512Kx32 SRAM MODULE p r e l im in a r y * FEATURES • A c c e s s T im e s o f 17, 2 0 , 2 5 , 3 5 a nd 4 5 n s ■ TTL C o m p a t ib l e In puts a nd C M O S O u tp u ts ■ 6 8 - l e a d , JLCC, P a c k a g e 701

7M4048

Abstract: IDT7M4048
Contextual Info: bflE •I 4325771 0014401 3t,T IDTIDT7M4048 IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE INTEGRATED DEVICE. FEATURES: DESCRIPTION: • High-density 4-megabit 512K x 8 Static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 Static RAMs

Contextual Info: ÛEROFLEX Cl HCJTTECHNOLOGY Features • 4 Low Power 512K x 8 FLASH Die in One MCM Package ■ TTL Compatible Inputs and CMOS Outputs ■ Access Times of 70, 90, 120 and 150nS ■ +5V Programing, 5V ±10% Supply ■ 100,000 Erase/Program Cycles ■ Low Power CMOS, Standby Current 1 mA

SAMSUNG SRAM

Contextual Info: ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Overall configuration as 512K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35 & 45ns Access Times, 15ns Available by Special Order

Contextual Info: I I I I I I I I I I I I I I I I I I ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM Plastic Path Features • Low Power Monolithic CMOS 512K x 8 SRAM ■ Operating Temperature Range • Full Military -55°C to +125°C • Industrial (-40°C to +85°C)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

060P7Q

Contextual Info: — H ACT-F512K32 High Speed H — 16 Megabit FLASH Multichip Module Q eroflex CIRCUIT TECHNOLOGY www.aeroflex.com Features • 4 Low Power 512K x 8 FLASH Die in One MCM Package ■ TTL Compatible Inputs and CMOS Outputs ■ Access Times of 60, 70, 9 0 ,1 2 0 and 150ns

Contextual Info: -L T - P < mm >5 1 21 £ ; 1H i l n n 1 ' A1 IWI r \ t if ] h it D i o c r û I I /If issssi t VI Jtl u i l o t t t r 1Irli J l >6 Hd l i Ii1h p ltf.1 I iIls C►F l\/l Preliminary PlasticPath Features • Low Power Monolithic CMOS 512K x 8 SRAM ■ Operating Temperature Range

Contextual Info: WMF512K8-XXX5 WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC FLASH, SMD 5962-96692 PRELIMINARY* FEATURES • A c c e s s T i m e s o f 7 0, 90, 1 20 a n d 150n S ■ C o m m e r c ia l , In d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e R a ng e s ■