AO4614 Search Results

AO4614B

Abstract: AO4614BL
Contextual Info: AO4614B Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614B/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

AO4614B

Contextual Info: AO4614B 40V Dual P + N-Channel MOSFET General Description Product Summary The AO4614B uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Contextual Info: AO4614 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other

Contextual Info: AO4614 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other

AO4614

Abstract: AO4614L
Contextual Info: AO4614 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other

Contextual Info: AO4614A Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other

AO4614A

Abstract: Complementary
Contextual Info: AO4614A Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other

Contextual Info: AO4614 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other

Contextual Info: AO4614B 40V Dual P + N-Channel MOSFET General Description Product Summary The AO4614B uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

AO4614B

Abstract: AO4614BL
Contextual Info: AO4614B Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614B/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Contextual Info: AO4614 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other

Contextual Info: AO4614 40V Dual P + N-Channel MOSFET General Description Product Summary The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Contextual Info: AO4614 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other

ao4614

Abstract: AO4614L
Contextual Info: AO4614 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other

Contextual Info: コンプリメンタリーパワー MOSFET ELM14614AA-N •概要 ■特長 ELM14614AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=6A Vgs=10V

AO4946

Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

复合

Abstract: ELM14614AA
Contextual Info: 复合沟道 MOSFET ELM14614AA-N •概要 ■特点 ELM14614AA-N 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=40V P 沟道 ·Vds=-40V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=6A Vgs=10V ·Id=-5A(Vgs=-10V)

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Contextual Info: Complementary MOSFET ELM14614AA-N •General Description ■Features ELM14614AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum Absolute Ratings • • • • N-channel P-channel Vds=40V Id=6A(Vgs=10V) Rds(on) < 31mΩ(Vgs=10V)

AO4946

Abstract: AO4456 AO6414 AO4466 ao4712 AOP610 D-PAK AO4803A AO3407A AO4427 AO8820
Contextual Info: NEW! MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Alpha and Omega Semiconductor AOS has a portfolio of approximately 400 products making AOS a well known, high volume, global supplier of Power MOSFETs. This diverse product range includes both N and P

Contextual Info: Complementary MOSFET ELM14614AA-N •General Description ■Features ELM14614AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. ■Maximum Absolute Ratings • • • • N-channel P-channel Vds=40V Id=6A(Vgs=10V) Rds(on) < 31mΩ(Vgs=10V)