AOA16 Search Results

27LV010A

Contextual Info: TMS27LV010A1 048 576-BIT UV ERASABLE LOW VOLTAGE PROGRAMMABLE ROM TMS27LV010A1 048 576-BIT LOW VOLTAGE ONE-TIME PROGRAMMABLE ROM SMLS113-DECEMBER 1992 x 8 J AND N PACKAGESt TOP VIEW Single 3.3-V Power Supply Operationally Compatible With Existing 1-Megabit EPROMs

TC518129

Abstract: de interlace
Contextual Info: TOSHIBA TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 2 9 A is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s by 8 bits. The TC 5 18 1 29A utilizes

12024-3

Abstract: 74LVT16652 74LVT16652MEA 74LVT16652MEAX 74LVT16652MTD 74LVT16652MTDX LVT16652 MTD56
Contextual Info: LVT16652 ADVANCE INFORMATION National Semiconductor 74LVT16652 3.3V ABT 16-Bit Transceiver/Register with TRI-STATE Outputs General Description Features The LVT16652 consists of sixteen bus transceiver circuits with D-type flip-flops, and control circuitry arranged for multi­

Contextual Info: DALLAS SEMICONDUCTOR DS1248Y 1024K NV SRAM with Phantom Clock PIN ASSIGNMENT FEATURES • Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years • 128K x 8 NV SRAM directly replaces volatile static

Contextual Info: 512K X 8 EEPROM m o l a t e ME8512SC-15/20 Issue 12 . : March 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Pin Definition 524,288x 8 CMOS EEPROM Features Very Fast Access Times of 150/200 ns JEDEC 4M EEPROM Standard 32 pin DIL footprint Operating Power 350 mW max

3165* intel

Abstract: 82360SL intel 80386SL twc np 6001 28f200 tsop intel 28f200bx 28F002BX 28F002BX-B 28F002BX-T 28F200BX
Contextual Info: INTEL CORP HEHORY/PLD/ SbE D • 4fl2bl?b 007bBS3 flTb m i T L Z 0M lF K ß ! ilÄ T 0®If!!] in te l 'T W o 'K V ¿ k 28F200BX-T/B, 28F002BX-T/B 2 MBIT (128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B

k 4431

Contextual Info: in te i 28F200BX-T/B, 28F002BX-T/B 2 MBIT 128K x 16,256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x6/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs Very High-Performance Read — 60/80 ns Maximum Access Time

Contextual Info: molaic 1M X 8 S R A M M S 810 00R K X A -8 5 /1 0 /1 2 Issue 1.1 : June 1992 Mosaic ADVANCE PRODUCT INFORMATION Sem iconductor Inc. Pin Definition 1,048,576 x 8 CMOS High Speed Static RAM vcc AO A1 A2 A3 DO D1 A4 A5 Features Fast Access Times of 85/100/120 nS

Contextual Info: XIC GR INC ^^41743 SBE ]> □ □ □ 3 7 h 2 D 41 « X I C Preliminary Information 1 Megabit Module XM28C010 128K X 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES • High Density 1 Megabit 128K x 8 E2PROM Module • Access Time of 120 ns at -55°C to +125°C

Z8S182

Abstract: 75als194 rs232 PICC compiler ZL82 Z80182 ESCC technical manual z182 LocalTalk 8kx8 sram MARK 904A skip 24 evi 10
Contextual Info: 88C0022-001 D O C UMENT CONTROL MAS T E R R e v , B Z80182 EVALUATION BOARD USER MANUAL TABLE OF CONTENTS General Description 1. INSTALLATION 1.1 Memory Configuration 1.2 Emulation Mode Selection 1.3 IBM-PC plug-in card configuration 1.4 Stand-alone system configuration

AM27LV010

Contextual Info: PRELIM INARY & Advanced Micro Devices Am27LV010/Am27LV010B 1 Megabit 131,072 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply Fast Flashrlte programming — Typical programming time of 16 seconds — Regulated power supply 3.0 V -3.6 V

X28C010

Abstract: X28C256 XM28C010 XM28C010I
Contextual Info: Prelim inary Inform ation 1 Megabit Module U XM28C010 r 1 28 K x 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES • Fast Write Cycle Times Supported by: — Internal Program Cycle 10 ms Max. — 64-byte Page — DATA Polling — Toggle Status Bit • High Rel Module Available with:

WF128K32-XXX5A

Abstract: F128K32N
Contextual Info: WF128K32-XXX5 I/I/HITE /M IC R O E L E C T R O N IC S 128Kx32 5V FLASH MODULE PRELIMINARY* FEATURES • Commercial, Industrial and M ilitary Temperature Ranges ■ Access Times of 70, 90, 120 and 150nS ■ 5 Volt Programming. 5V ±10% Supply ■ Packaging

CA051

Abstract: 16A06
Contextual Info: Z2 WF128K32-XXX M/HITE /M IC R O ELEC T R O N IC S 128Kx3212V FLASH MODULE • Organized as 128Kx32 FEATURES ■ 12 V o lt Programming; 5V ±10% Supply ■ Access Times of 120, 150 and 200nS ■ Low Power CMOS, 4m A Standby Typical ■ Packaging ■ Hardw are and Softw are W rite Protection

Contextual Info: ADE-203-234B Z HM628128B Series 131,072-word x 8-bit High Speed CMOS Static RAM Rev. 2.0 March 20, 1995 HITACHI The Hitachi HM628128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, h igher perform ance and low pow er consum ption by em ploying 0.8 pm Hi-CMOS

AKER Ah

Abstract: sram card battery
Contextual Info: 2M Byte SRAM CARD KMCJ6161000 1M x 16 / 2M x 8_ GENERAL DESCRIPTION July 1993 FEATURES The KM CJ6161000 is the industry standard SRAM m emory card and consists of Samsung's advanced • Fast Access Time : 150/200/250ns • Low Power Dissipation

LH23110

Abstract: LH231100 LH231 LH231100B sharp mask rom
Contextual Info: NMOS 1M 128K x 8 Mask Programmable ROM DESCRIPTION FEATURES • 131,072 • Access time: 200 ns (MAX.) • Power consumption: Operating: 550 mW (MAX.) x 8 bit organization The LH231100B is a mask programmable ROM organized as 131,072 x 8 bits. It is fabricated using

MCM32128A

Abstract: DQ420
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MCM32128ND DATA MCM32128A 128K x 32 Bit Fast Static RAM Module The MCM321 28A is a 4M bit static random access memory module organized as 131,072 words of 32 bits. The module is offered in a 64–lead single in–line

Contextual Info: LH5P8129 CMOS 1M 128K x 8 CS-Control Pseudo-Static RAM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH5P8129 is a 1M bit Pseudo-Static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times (MAX.): 60/80/100 ns

IS61C1024-12J

Contextual Info: I S 6 1 C 1 I S 6 1 C 1 2 2 ISSI 4 4 L 128K x 8 HIGH-SPEED CMOS STATIC RAM NOVEMBER 1998 FEATURES DESCRIPTION • H ig h -s p e e d a c c e s s tim e : 1 2 ,1 5 , 2 0 , 2 5 n s • L o w a c tiv e p o w e r: 6 0 0 m W ty p ic a l • L o w s ta n d b y p o w e r: 5 0 0 fiW (ty p ic a l) C M O S

IC-3216

Abstract: 78P054GC-3B9 D78P054 TDK tad 204 78p054
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _¿ ¿ P D 7 8 P 0 5 4 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION T h e /¿PD78P054 is a product in the ¿iPD78054 subseries within the 78K/0 series, in w hich the on-chip m ask RO M of the ¿IPD78054 is replaced w ith one-time P R O M or E PR O M .

Contextual Info: IS 6 1 C 1 0 2 4 IS 6 1 C 1 0 2 4 L 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • H ig h -s p e e d a cce ss tim e: 1 2 ,1 5 , 20, 25 ns • Low a c tiv e p o w e r: 600 m W typ ical • Low s ta n d b y p ow er: 500 fiW (typ ical) C M O S

Contextual Info: 128K x 36, 256K x 18, 3.3V SYNCHRONOUS SRAMS WITH ZBT FEATURE, 3.3V I/O, BURST COUNTER, AND PIPELINED OUTPUTS PRELIMINARY IDT71V3556 IDT71V3558 FE A TU R ES : • 128K x 3 6 ,256K x 18 memory configurations • Supports high performance system speed - 200 M Hz 3.2 ns

M27C1001

Contextual Info: SGS-THOMSON M27C1001 mo 1024K 128K x 8 CMOS UV EPROM - OTP ROM • JEDEC PIN OUT. ■ VERY FAST ACCESS TIME : 120 ns. ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : . Active Current 35mA . Standby Current 200 (jA