AOC RESIN Search Results

CAP 8000uf

Abstract: 5v b2 zener diode
Contextual Info: VER : B_2 update : 2010.04.30 AC-DC Power Module AOC SERIES 4 Watts KEY FEATURES „ „ „ „ „ „ „ „ „ Switching Power Module for PCB Mountable Fully Encapsulated Plastic Case Universal Input Range 90-264VAC, 47-440 Hz Single and Dual Output Low Ripple and Noise

AOC-12

Abstract: AOC-12S CAP 8000uf aoc resin
Contextual Info: VER : A_4 update : 98.07.07 AC-DC Power Module AOC SERIES 4 Watts KEY FEATURES „ Switching Power Module for PCB Mountable „ Fully Encapsulated Plastic Case „ Universal Input Range 90-264VAC, 47-440 Hz „ Single and Dual Output „ Low Ripple and Noise „ Isolation Class II

Contextual Info: VER : B_0 update : 98.12.04 AC-DC Power Module AOC SERIES 4 Watts KEY FEATURES „ „ „ „ „ „ „ „ „ Switching Power Module for PCB Mountable Fully Encapsulated Plastic Case Universal Input Range 90-264VAC, 47-440 Hz Single and Dual Output Low Ripple and Noise

Contextual Info: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components Photoreflective Sensor Leadframe packaging Preliminary HVS6003-002 Key Features: ƒ ƒ ƒ ƒ ƒ VCSEL and phototransistor in industry standard leadframe packaging Optical plastics block visible wavelength for better ambient light rejection

if6 sensor

Abstract: VCSEL phototransistor HVS6003-002 vcsel spice model 80625 phototransistor spice model VCSEL Reflective Optical Sensor "IR Sensor" with DIP laser based communication
Contextual Info: d DATA SHEET PHOTOREFLECTIVE SENSOR LEADFRAME PACKAGE HVS6003-002 FEATURES: „ VCSEL and phototransistor in industry standard leadframe packaging „ IEC 80625 Class 1 Laser Product The HVS6003-002 is designed as a higher performance alternative to LED based reflective

Contextual Info: d DATA SHEET PHOTOREFLECTIVE SENSOR LEADFRAME PACKAGE HVS6003-002 FEATURES: „ VCSEL and phototransistor in industry standard leadframe packaging „ IEC 80625 Class 1 Laser Product The HVS6003-002 is designed as a higher performance alternative to LED based reflective sensors. This Vertical Cavity

if6 sensor

Abstract: HVS6003-002 phototransistor spice model
Contextual Info: d DATA SHEET PHOTOREFLECTIVE SENSOR LEADFRAME PACKAGE HVS6003-002 FEATURES: „ VCSEL and phototransistor in industry standard leadframe packaging „ IEC 80625 Class 1 Laser Product The HVS6003-002 is designed as a higher performance alternative to LED based reflective

Contextual Info: DATA SHEET PHOTOREFLECTIVE SENSOR LEADFRAME PACKAGE HVS6003-002 FEATURES: VCSEL and phototransistor in industry standard leadframe packaging Optical plastics block visible wavelength for better ambient light rejection The HVS6003-002 is designed as a higher performance alternative to LED

Contextual Info: d DAT A SH EET PH OT OREFLECT I V E SEN SOR LEADFRAM E PACK AGE H V S6 0 0 3 -0 0 2 FEATURES: ̈ VCSEL and phototransistor in industry standard leadframe packaging ̈ IEC 80625 Class 1 Laser Product The HVS6003-002 is designed as a higher performance alternative to LED based reflective sensors. This Vertical Cavity

Contextual Info: d DATA SHEET PHOTOREFLECTIVE SENSOR LEADFRAME PACKAGE HVS6003-002 FEATURES: „ VCSEL and phototransistor in industry standard leadframe packaging „ IEC 80625 Class 1 Laser Product The HVS6003-002 is designed as a higher performance alternative to LED based reflective

Contextual Info: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS multiport DRAM composed o f a 262,144-word by 4-bits dynamic RAM and a 512-words by 4-bits SAM. Its RAM and SAM operate independently and asynchronously.

m514262

Abstract: MSM514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426
Contextual Info: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bits dynam ic RAM and a 512-words b y 4-bits SAM. Its RAM and SAM operate independently and asynchronously.

TS280-A89Z

Contextual Info: TS280—A89Z December 1989 FUJITSU DATA SHEET • MB82B71-15/-20 64K BIT HIGH SPEED BI-CMOS SRAM 65,536-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B71 is a 65,536 words by 1 bits static random access memory fabricated with a

516100

Contextual Info: SONY C X K 516100TM -70LL 65536-word x 16-bit High Speed CMOS RAM Description 44 pin TSOP Plastic CXK516100TM is a high speed CMOS static RAM organized as 65536-words by 16bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

CXK584000

Abstract: CXK584000M 100 10L AD CXK584000YM
Contextual Info: 54E SONY. J> m &3&E3&3 0DG4ÖS3 071 « S O N Y CXK584000TM/YM/M/P SiiSfeSKiSW 524288-word x 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized

MSM541

Abstract: MSM5416258B
Contextual Info: OKI Semiconductor Technical Information MSM5416258B 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258B is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5416258B achieves high integration,high-speed operation,and low-power

K242M

Abstract: l75h MSM54V16255A
Contextual Info: PRELIMINARY OK! Semiconductor REVISION-2 1996.11.2 M S M 5 4 V 1 6 2 5 5 A / S L ~~ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM54V162S5A/SL is a 262,144-word x 16-bit dynamic R A M fabricated in OKI's CM O S silicon gate technology. The MSM54V16255A/SL achieves high integration,high-speed operation,and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM54V16255A/SL is

MSM54V16258

Abstract: msm54v16258a V1625
Contextual Info: PRELIMINARY OKI Semiconductor MSM54V16258A/SL REVISION-2 1996.11.2 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V16258A/SL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM54V16258A/SL achieves high integration,high-speed operation,and lowpovver consumption doe to quadruple polysilicon double metal CMOS. The MSM54V16258A/SL is

M140 Blue Laser Diode

Abstract: 12 volt electronic ballast for fluorescent light ledinta0350c425 philips xitanium 150W 1-10V XI040C070V056CNJ1 M140 laser diode t5 94v-0 tv philips
Contextual Info: Lighting Electronics Atlas A Full Line Catalog of LED Drivers, LED Modules, Ballasts and Lighting Controls 2014-2015 Contents Philips Advance LED Drivers Page 1-1 Philips LED Modules Page 2-1 Philips Advance Electronic Fluorescent Ballasts Page 3-1 Philips Advance Electronic Fluorescent Controllable Ballasts

Contextual Info: 'f c N i- e »« _ Fu' j DATASHEET M B 8 1 1 6 1 0 1 -60/-70/-80 CMOS 16M x 1 Bit Nibble Mode Dynamic RAM The Fujitsu MB8116101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116101 features a nibble

Contextual Info: MEMORY CMOS 4 M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB8116400B-50/-60 CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8116400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB8116400B features a “fast page” mode of operation whereby high­

Contextual Info: MEMORY CMOS 4 M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB8116400B-50/-60 CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8116400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB8116400B features a “fast page” mode of operation whereby high­

Contextual Info: MEMORY 4 M X 4 BIT FAST PAGg MOD E DYNAMIC RAM M 7400A-60/-70/-60L/" CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB81V17400A is a fully decoded CMOS Dynamic RAM DRAM t e t contains 16,777,216 memory cells accessible in 4-bit increments. The MB81V17400A features a “fast page” m od^of operation whereby high­

340OLA

Contextual Info: MEMORY 1 M X 16 BIT HYPERPAGEMODEDYNAMICRAM MB81V16165 B-50/-60/-50L/-60 L CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V16165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB81V16165B features a “hyper page” mode of operation whereby