AP2306GN Search Results
AP2306GN Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AP2306GN | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 73.86KB | 4 | ||
| AP2306GN-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 99.03KB | 4 |
AP2306GN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Advanced Power Electronics Corp. AP2306GN-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Small Package Outline Surface Mount Device R DS ON G RoHS-compliant, Halogen-free 20V 35mΩ ID 5.3A S Description D Advanced Power MOSFETs from APEC provide the designer with the best |
Original |
AP2306GN-HF-3 AP2306GN-HF-3 OT-23 OT-23 | |
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Contextual Info: AP2306GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Capable of 2.5V gate drive Lower on-resistance 20V RDS ON D 35m ID Surface mount package RoHS Compliant 5.3A S SOT-23 Description D G Advanced Power MOSFETs utilized advanced processing techniques |
Original |
AP2306GN-HF OT-23 OT-23 100ms | |
AP2306GNContextual Info: AP2306GN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D BVDSS 20V RDS ON 35mΩ ID ▼ Surface mount package 5.3A S SOT-23 Description D G Advanced Power MOSFETs utilized advanced processing techniques to |
Original |
AP2306GN OT-23 OT-23 100ms 270/W AP2306GN | |
AP2306GNContextual Info: AP2306GN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D ▼ Surface mount package BVDSS 20V RDS ON 32mΩ ID 5.3A S SOT-23 Description G Advanced Power MOSFETs utilized advanced processing techniques to |
Original |
AP2306GN OT-23 OT-23 100ms 270/W AP2306GN | |
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Contextual Info: AP2306GN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Capable of 2.5V gate drive Lower on-resistance 20V RDS ON D 35m ID Surface mount package 5.3A S SOT-23 Description D G Advanced Power MOSFETs utilized advanced processing techniques to |
Original |
AP2306GN OT-23 OT-23 100ms | |
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Contextual Info: AP2306GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D ▼ Surface mount package BVDSS 20V RDS ON 35mΩ ID ▼ RoHS Compliant 5.3A S SOT-23 Description |
Original |
AP2306GN-HF OT-23 OT-23 | |
AP2306GN-HFContextual Info: AP2306GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D BVDSS 20V RDS ON 35mΩ ID ▼ Surface mount package ▼ RoHS Compliant 5.3A S SOT-23 Description |
Original |
AP2306GN-HF OT-23 OT-23 100ms 270/W AP2306GN-HF | |
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Contextual Info: AP2306GN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D ▼ Surface mount package BVDSS 20V RDS ON 35mΩ ID 5.3A S SOT-23 Description G Advanced Power MOSFETs utilized advanced processing techniques to |
Original |
AP2306GN OT-23 OT-23 100ms |