AP30G100 Search Results
AP30G100 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AP30G100W | Advanced Power Electronics | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Original | 214.86KB | 4 |
AP30G100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 1000V IC 30A C G C RoHS Compliant E |
Original |
AP30G100W 30G100W | |
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Contextual Info: Advanced Power Electronics Corp. AP30G100W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1000V High Speed Switching C Low Saturation Voltage 30A IC Typical V CE sat = 3.0V at IC=30A G Industry-standard TO-3P C C RoHS-compliant, halogen-free |
Original |
AP30G100W-HF-3 100oC AP30G100 30G100W | |
transistor TO-3P Outline DimensionsContextual Info: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1000V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G G C ▼ RoHS Compliant |
Original |
AP30G100W Fig11. 30G100W transistor TO-3P Outline Dimensions |