APPLICATION NEW HEXFET Search Results

IRFP60A

Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
Contextual Info: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes

transistor equivalent irf510

Abstract: 966a transistor equivalent irf740 irf460a HEXFET III - A new Generation of Power MOSFETs fet irf840 transistor equivalent irf520 IRF83Q AN949A High frequency switching AN-966A
Contextual Info: APPLICATION NOTE 966A HEXFET III: A New Generation of Power MOSFETs H EXFET is a tra d e m a rk o f In te rn a tio n a l R ectifie r by D. Grant Introduction International Rectifier has introduc­ ed a new third-generation of HEXFET power MOSFETs, the HEXFET III.

irf7105

Abstract: Dual N P-Channel irf7102
Contextual Info: International lüRectifier HEXFET Power MOSFETs Surface Mount sn-8 The new SO-8 can accommodate a dual-die configuation, allowing multiple devices to be used in an application with greatly reduced board space. Power dissipation of more than 1W is possible in a typical printed circuit board application. The SO-8 is designed for all soldering techniques.

10BQ040

Abstract: IRF7809A IRF7809AV
Contextual Info: PD-90010 IRF7809AV • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description This new device employs advanced HEXFET Power

LM358 vs LM741

Abstract: LM324 vs LM741 Wavetek 187 AN-959 AN959 lm358 multimeter LM741 LM324 HEXSENSE LM741 vs. LM324
Contextual Info: AN-959 An Introduction to the HEXSenseTM Current-Sensing Device HEXSense and HEXFET are trademarks of International Rectifier by S. CLEMENTE, H. ISHII, S.YOUNG Introduction This application note will acquaint the designer with International Rectifier's new family of HEXFET power

10BQ040

Abstract: IRF7807 IRF7807V
Contextual Info: FOR REVIEW ONLY PD-TBD IRF7807V • • • • N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented

doctor-blade

Abstract: 150um
Contextual Info: Application Note AN-1011 Assembly of FlipFET Devices by Hazel Schofield and Martin Standing, International Rectifier FlipFET™ is a new generation of HEXFET Power MOSFET package from International Rectifier. FlipFET™ combines the latest die design and wafer

IRF7811

Abstract: 10BQ040 IRF7809 93812
Contextual Info: PD - 93812 PD - 93813 IRF7809/IRF7811 IRF7809/IRF7811 Provisional Datasheet • N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters • Ideal for CPU Core DC-DC Converters • New CopperStrapTM Interconnect for Lower Electrical and Thermal Resistance

IRF7811

Abstract: IRF7809 93812 HEXFET SO-8 10BQ040
Contextual Info: PD - 93812 PD - 93813 IRF7809/IRF7811 IRF7809/IRF7811 Provisional Datasheet • N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters • Ideal for CPU Core DC-DC Converters • New CopperStrapTM Interconnect for Lower Electrical and Thermal Resistance

applications of mos controlled thyristor

Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
Contextual Info: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to

10BQ040

Abstract: IRF7807 IRF7807A power supply with mosfet dm 100
Contextual Info: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power

Contextual Info: PD-95210 IRF7807VPbF • • • • • • HEXFET Power MOSFET N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Lead-Free Description This new device employs advanced HEXFET Power

t428

Abstract: t428 diode t428 fet IRF7807 t428 24v 10BQ040 IRF7807A FET MARKING
Contextual Info: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power

P 838 X MOSFET

Abstract: power mosfet so8 FL 10BQ040 IRF7805 IRF7805A 9936 mosfet IR power mosfet switching power supply TR2020
Contextual Info: PD – 91746C IRF7805/IRF7805A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power

10BQ040

Abstract: IRF7811AV 16VZ
Contextual Info: PD-94009 IRF7811AV IRF7811AV • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description This new device employs advanced HEXFET Power

Contextual Info: PD-TBD IRF7811AV IRF7811AV • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description This new device employs advanced HEXFET Power

10BQ040

Abstract: EIA-541 IRF7101 IRF7807V MS-012AA
Contextual Info: PD-95210 IRF7807VPbF • • • • • • HEXFET Power MOSFET N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Lead-Free Description This new device employs advanced HEXFET Power

15A92

Abstract: 11nC
Contextual Info: PD-94021 IRLR8103V PROVISIONAL • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications D Description This new device employs advanced HEXFET Power

IRLR8103V

Abstract: 10BQ040
Contextual Info: PD-94021A IRLR8103V • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications D Description This new device employs advanced HEXFET Power

10BQ040

Abstract: EIA-541 IRF7101 IRF7807V MS-012AA
Contextual Info: PD-95210 IRF7807VPbF • • • • • • HEXFET Power MOSFET N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Lead-Free Description This new device employs advanced HEXFET Power

ED26 diode

Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
Contextual Info: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the

irf7807pbf

Abstract: 10BQ040 EIA-541 F7101 IRF7101 IRF7807 IRF7807A hexfet pair
Contextual Info: PD – 95290 IRF7807PbF IRF7807APbF HEXFET Chip-Set for DC-DC Converters • • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description These new devices employ advanced HEXFET

Contextual Info: PD- 95023 IRF7811WPbF HEXFET Power MOSFET for DC-DC Converters • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description This new device employs advanced HEXFET Power

10BQ040

Abstract: EIA-541 F7101 IRF7101
Contextual Info: PD – 96031 IRF7805PbF HEXFET Chip-Set for DC-DC Converters • • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description This new device employs advanced HEXFET Power