APT1004 Search Results

Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D APT1004RBNR O S POWER MOS IV« 1000V 4.4A 4.00Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter

Contextual Info: ADVANCED POW ER Te c h n o l o g y OD APT1004RBN OS 1000V 4.4A 4.00Í1 APT1004R2BN 1000V 4.0A 4.20Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 1004RBN APT

APT1004RKN

Abstract: APT1004R2KN 1004r
Contextual Info: D TO-220 G APT1004RKN APT1004R2KN S 1000V 3.6A 4.00 Ω 1000V 3.5A 4.20 Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter V DSS APT1004R2KN APT1004RKN

Contextual Info: D TO-254 G APT1004RCN 1000V 3.6A 4.00Ω Ω S POWER MOS IV TM N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1004RCN UNIT 1000 Volts Drain-Source Voltage

diode 944 lg

Contextual Info: A D V A N CE D POWER TEC HN O LO G Y M'lE J> 0 8 5 7 ^ 0 C OOOObDO b b b * A V P ADVANCED J 9OW ER T - s a - i s Te c h n o l o g y OD 4 Ì > : APT10040CFN 1000V 24.5A 0.40 APT9040CFN 900V 24.5A 0.40 i l Os POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

106F

Abstract: APT10045B2LL APT10045LLL DSA003712
Contextual Info: APT10045B2LL APT10045LLL 1000V 23A 0.450Ω POWER MOS 7 R MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y APT1004RCN 1000V 3.6A APT904RCN 900V 3.6A APT1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q

Contextual Info: APT10043JVR 22A 0.430Ω Ω 1000V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10045B2FLL B2FLL T-MAX TO-264 LFLL D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT10045 UNIT 1000 Volts 23 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current

Contextual Info: APT10045B2LL APT10045LLL 1000V 23A 0.450Ω POWER MOS 7 R MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT10045B2LL

Abstract: APT10045LLL
Contextual Info: APT10045B2LL APT10045LLL 1000V 23A 0.450W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: APT10043JVR AD VANCED P o w er Te c h n o l o g y ’ iooov 22A 0.43012 PO W ER M O S V M Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

TO-254

Abstract: TO-254AA TO-254AA Package
Contextual Info: APT1004RCN 20 10,000 5 1mS 1 10mS 0.5 TC =+25°C TJ =+150°C SINGLE PULSE VGS, GATE-TO-SOURCE VOLTAGE VOLTS Coss 100 Crss DC 1 5 10 50 100 500 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 I = I [Cont.] D D 16 VDS=100V

1004R2BN

Abstract: apt1004rbn APT1004R2BN 1004rbn
Contextual Info: D TO-247 G APT1004RBN S POWER MOS IV 1000V 4.4A 4.00Ω APT1004R2BN 1000V 4.0A 4.20Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

Contextual Info: APT10045JFLL 1000V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

APT15DF120B

Abstract: APT0045JLL APT10045JLL DSA003710.
Contextual Info: APT10045JLL 1000V R POWER MOS 7 0.450Ω 21A MOSFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT1004RKN

Contextual Info: • r IT J M A dvanced R ow er Te c h n o l o g y APT1004RKN APT1004R2KN 1000V 3.6A 4.00Q 1000V 3.5A 4.20Q POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: Tc = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter

Contextual Info: APT10045JFLL 1000V 21A 0.46 Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT10045JLL 1000V POWER MOS 7TM Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

640Q

Contextual Info: APT10045B2FLL APT10045LFLL 1000V 23A 0.450W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

APT901RBN

Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
Contextual Info: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN

APT10040CFN

Abstract: APT9040CFN apt10040gfn
Contextual Info: ADVANCED POWER TECHNOLOGY GOOObDD bbb • M^E D A VP A D V A N C E D MHJWER T-Sfl-is ? D F-Pack CF : Techno lo g y 5 APT10040CFN 1000V 24.5A 0.40 APT9040CFN 900V 24.5A 0.40 ft Os POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

Contextual Info: 0 2 5 7 cl 0 cì 0005170 2ST A d van ced P o w er Te c h n o l o g y 0 POWER MOS IV APT1004RBN APT904RBN APT1004R2BN APT904R2BN 1000V 900V 1000V 900V 4.4A 4.4A 4.0A 4.0A 4.00Œ 4.00ft 4.20& 4.20Œ N -C H A N N EL ENHANCEM ENT M O DE HIGH VOLTAGE POWER MOSFETS

Contextual Info: advanced power " TA technology jy I* T DE I a S S T T D T □□□□□10 3 e! -15 For Additional Information Contact A PT Sales Representatives O r The Factory. Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1003R5CN APT1004R2CN APT902R5CN APT903RCN