APT10M1B2VR Search Results
APT10M1B2VR Datasheets Context Search
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Contextual Info: APT10M11B2VR 0.011Ω 100V 100A POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M11B2VR O-247 APT10M1B2VR | |
Contextual Info: A • R W .\A A P T 1 0 M 11 B 2 V R dvanced pow er Te c h n o lo g y " ioov 100a 0.01 i q POWER MOS V‘ Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, |
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O-247 APT10M1B2VR |