APT25 Search Results

APT25GP120B

Abstract: IC 7411 T0-247
Contextual Info: APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,

IC 7411 DATA SHEET

Abstract: IC 7411 APT25GP120B T0-247
Contextual Info: APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,

Contextual Info: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT25GLQ120JCU2

Contextual Info: APT25GLQ120JCU2 ISOTOP Boost chopper Trench + Field Stop fast IGBT4 Power module VCES = 1200V IC = 25A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C G Features • Trench + Field Stop Fast IGBT 4 Technology

APT25GR120B

Contextual Info: APT25GR120B_S APT25GR120B APT25GR120S 1200V, 25A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT (B) TO The Ultra Fast NPT - IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between

APT25GN120SG

Abstract: energy 3000 ups APT25GN120B APT25GN120BG APT25GN120S MIC4452 APT30DQ120
Contextual Info: TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S G APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum

APT25GF100BN

Contextual Info: ADVANCED POWER TECHNOLOGY blE D • □ 2 5 7 t30ci ÚQDOÓñb 10^ « A V P A D V A N C E D P o w er Te c h n o l o g y APT25GF100BN 1000V 25A POWER MOS IV IGBT N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

Contextual Info: APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,

MOSFET 25A 600V

Abstract: APT25GP120BDF1 T0-247 IC-125A mosfet 1200V 25A
Contextual Info: APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power

Contextual Info: APT25GN120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design

Contextual Info: APT25GF120JCU2 ISOTOP Boost chopper NPT IGBT SiC chopper diode VCES = 1200V IC = 25A @ Tc = 90°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch K C Features  Non Punch Through NPT Fast IGBT

Contextual Info: TYPICAL PERFORMANCE CURVES APT25GT120BRDL G 1200V APT25GT120BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT TO The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior

APT25GT120SRG

Contextual Info: 1200V APT25GT120BR G APT25GT120BR APT25GT120BRG* APT25GT120SR APT25GT120SRG* TYPICAL PERFORMANCE CURVES *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT TO -2 47 D3PAK The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch

D-6020

Abstract: APT25GP90B T0-247
Contextual Info: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: TYPICAL PERFORMANCE CURVES APT25GP120BDF1 APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power

APT25GT120BRDQ2G

Contextual Info: APT25GT120BRDQ2 G 1200V TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2 APT25GT120BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch

Contextual Info: APT25GF120JCU2 ISOTOP Boost chopper NPT IGBT SiC chopper diode VCES = 1200V IC = 25A @ Tc = 90°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K C Features • Non Punch Through NPT Fast IGBT

Contextual Info: TYPICAL PERFORMANCE CURVES APT25GT120BR G 1200V APT25GT120BR APT25GT120BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

APT25GP90BDF1

Abstract: T0-247 T0247 package NF 833
Contextual Info: APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S G APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum

Contextual Info: APT25M100J 1000V, 25A, 0.33Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

25GP120BDF1

Abstract: APT25GP120BDF1 IC 7416 T0-247 25GP120BD 25gp120
Contextual Info: APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,

Contextual Info: APT25GR120B_SDU15 APT25GR120BDU15 APT25GR120SDU15 1200V, 25A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode (B) The Ultra Fast 1200V NPT-IGBT family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between

APT25GP120BDQ1

Abstract: APT25GP120BDQ1G 600V 25A Ultrafast Diode 600V 25A Ultrafast Diode APT APT10078BLL
Contextual Info: APT25GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT25GP120BDQ1 APT25GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching