APT30M Search Results

Contextual Info: APT30M85SVR 40A 0.085Ω 300V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

APT30M30B2LL

Abstract: APT30M30LLL
Contextual Info: APT30M30B2LL APT30M30LLL 300V 100A 0.030Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT30M19JVFR A dvanced P o w er Te c h n o l o g y 300V POWER MOSV 130A 0.019CÌ iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT30M40JVR ADVANCED P ow er Te c h n o l o g y 300v 70a 0 .0 4 0 0 POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

14240

Abstract: fast diode SOT-227
Contextual Info: APT30M17JFLL 0.017Ω 300V 135A POWER MOS 7TM FREDFET MAXIMUM RATINGS Symbol VDSS ID S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

APT30M70BVR

Contextual Info: APT30M70BVR 48A 0.070Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

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Contextual Info: APT30M61BFLL APT30M61SFLL 300V 54A 0.061Ω POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: APT30M85BVFR 300V POWER MOS V 40A 0.085Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT30M75BLL APT30M75SLL 300V 44A 0.075W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: APT30M17JLL 300V 135A 0.017W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

Contextual Info: APT30M70SVR 48A 0.070Ω 300V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT30M30JLL 88A 0.030Ω 300V R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT30M85BVRG

Contextual Info: APT30M85BVR G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 40A 0.085Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT30M85BVFR A dvanced P ow er T e c h n o lo g y 9 300V POWER MOSV 40A 0.085Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT30M70BVR APT30M70SVR 300V 0.070Ω Ω 48A POWER MOS V D3PAK TO-247 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

diode 88A

Abstract: 88a diode and/kvp 88a
Contextual Info: APT30M30JFLL 300V POWER MOS 7 R 0.030Ω 88A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT30M60J 600V, 31A, 0.15Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT30M30B2FLL

Abstract: APT30M30LFLL
Contextual Info: APT30M30B2FLL APT30M30LFLL 300V 100A 0.030Ω POWER MOS 7 R FREDFET B2FLL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: A dvanced P ow er Te c h n o lo g y APT30M85BNFR APT3010BNFR GpWER MOS UM 300V 40A 300V 35A 0.085Q 0.100Q AVALANCHE RATED FREDFET N -C H A N N EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

IS-31

Contextual Info: A d v a n c ed P o w er Tec h n o lo g y 9 APT30M85BNFR APT301OBNFR 300V 40A 0.085Q 300V 35A 0.100Q FAST RECOVERY MOSFET FAMILY POWER MOS IVe N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS M AXIM UM RATING S Parameter APT30M85BNFR DSS Drain-Source Voltage

APT30M19JVFR

Contextual Info: APT30M19JVFR ADVANCED POW ER Te c h n o l o g y POWER MOSV 300V 130A 0.0190 FREDFET Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: A dvanced APT30M85BVR pow er Te c h n o lo g y 300V 40A 0.085Q POWER MOSV Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: APT30M85BVFR A dvanced po w er Te c h n o l o g y POWER MOS V‘ 300V 40A 0.085Í2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

DIODE 76A

Abstract: APT30M36JLL ISOTOP
Contextual Info: APT30M36JLL 300V POWER MOS 7 R 76A 0.036Ω MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON