APT5024 Search Results
APT5024 Price and Stock
Microchip Technology Inc APT5024SLLGMOSFET N-CH 500V 22A D3PAK |
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APT5024SLLG | Tube | 60 |
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APT5024SLLG | Tube | 20 Weeks | 60 |
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APT5024SLLG | Bulk | 60 |
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APT5024SLLG | Tube | 20 Weeks |
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APT5024SLLG | 1 |
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APT5024SLLG | Tube | 41 |
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Microchip Technology Inc APT5024BLLGMOSFET N-CH 500V 22A TO247 |
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APT5024BLLG | Tube | 70 |
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APT5024BLLG | Tube | 20 Weeks | 70 |
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APT5024BLLG | Bulk | 70 |
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APT5024BLLG | Tube | 20 Weeks |
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APT5024BLLG | Tube | 46 |
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Microchip Technology Inc APT5024BFLLGMOSFET N-CH 500V 22A TO247 |
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APT5024BFLLG | Tube | 70 |
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APT5024BFLLG | Tube | 26 Weeks | 70 |
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APT5024BFLLG | Bulk | 70 |
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APT5024BFLLG | Tube | 26 Weeks |
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APT5024BFLLG | 1 |
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APT5024BFLLG | Tube | 45 |
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APT5024BFLLG | 70 |
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Microchip Technology Inc APT5024SLLG-TRMOSFET N-CH 500V 22A D3PAK |
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APT5024SLLG-TR | Cut Tape | 1 |
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Microchip Technology Inc APT5024SLLG/TRPower MOS 7 MOSFET N-Channel 500V 22A 3-Pin TO-268 - Tape and Reel (Alt: APT5024SLLG/TR) |
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APT5024SLLG/TR | Reel | 20 Weeks | 400 |
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APT5024SLLG/TR | Reel | 400 |
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APT5024SLLG/TR | Reel | 20 Weeks |
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APT5024SLLG/TR | 400 |
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APT5024 Datasheets (27)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APT5024AVR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 54.5KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024AVR | Advanced Power Technology | POWER MOS V 500V 18.5A 0.240 Ohm | Original | 62.33KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024BFLL | Advanced Power Technology | POWER MOS 7 500V 22A 0.240 Ohm | Original | 72.76KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024BFLL | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 71.64KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024BFLL |
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Power MOS 7 Low Loss FREDFET | Original | 163.04KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024BFLL | Unknown | Power MOS 7, 500V 22A, MOS-FET N-Channel enhanced | Original | 99.51KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024BFLLG |
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MOSFET N-CH 500V 22A TO247 | Original | 221.21KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024BLL | Advanced Power Technology | POWER MOS 7 R FREDFET | Original | 98.52KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024BLL | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 71.37KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024BLL |
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Power MOS 7 Low Loss MOSFET | Original | 162.36KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024BLLG |
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Power MOSFET; Package: TO-247 [B]; ID (A): 22; RDS(on) (Ohms): 0.24; BVDSS (V): 500; | Original | 162.34KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024BVFR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 63.5KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024BVFR |
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Power MOS V FREDFET | Original | 114.48KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024BVR | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 60.97KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APT5024BVR | Unknown | Power MOS V, 500V 22A, MOS-FET N-Channel enhanced | Original | 112.51KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024SFLL | Advanced Power Technology | POWER MOS 7 500V 22A 0.240 Ohm | Original | 72.76KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024SFLL | Advanced Power Technology | N-Channel enhancement mode power MOSFET | Original | 71.64KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024SFLL |
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Power MOS 7 Low Loss FREDFET | Original | 163.04KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024SFLL | Unknown | Power MOS 7, 500V 22A, MOS-FET N-Channel enhanced | Original | 99.5KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5024SLL | Advanced Power Technology | POWER MOS 7 R FREDFET | Original | 98.51KB | 5 |
APT5024 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APT5024BVR A dvanced P o w er Te c h n o l o g y 500V 22A 0.240Í1 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V |
OCR Scan |
APT5024BVR O-247 O-247AD | |
Contextual Info: APT5024BVFR 500V POWER MOS V 22A 0.240Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT5024BVFR O-247 O-247 APT5024BVR | |
MJ1210Contextual Info: APT5024AVR • R A dvanced W .\A pow er Te c h n o lo g y " soov i8 .s a 0.240q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
APT5024AVR APT5024AVR IL-STD-750 MJ1210 | |
APT5024BFLL
Abstract: APT5024SFLL
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APT5024BFLL APT5024SFLL O-247 O-247 APT5024BFLL APT5024SFLL | |
Contextual Info: APT5024BLL APT5024SLL 500V 22A 0.240Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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APT5024BLL APT5024SLL O-247 O-247 | |
APT5024BLL
Abstract: APT5024SLL
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APT5024BLL APT5024SLL O-247 O-247 APT5024BLL APT5024SLL | |
c2802
Abstract: AS1210
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APT5024BVR O-247 00A/fis) O-247AD c2802 AS1210 | |
APT5024BVFR
Abstract: APT5024SVFR
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APT5024BVFR APT5024SVFR O-247 O-247 APT5024BVFR APT5024SVFR | |
Contextual Info: APT5024BLL G APT5024SLL(G) 500V 22A 0.240Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching |
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APT5024BLL APT5024SLL O-247 | |
Contextual Info: APT5024BVFR APT5024SVFR 500V POWER MOS V FREDFET 22A 0.240Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT5024BVFR APT5024SVFR O-247 O-247 APT50 | |
APT5024BFLL
Abstract: APT5024SFLL
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APT5024BFLL APT5024SFLL O-247 O-247 APT5024BFLL APT5024SFLL | |
APT5024BFLL
Abstract: APT5024SFLL
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APT5024BFLL APT5024SFLL O-247 O-247 APT5024BFLL APT5024SFLL | |
apt5024bvfrContextual Info: APT5024BVFR A dvanced P o w er Te c h n o l o g y ' 500V 22A 0.240ÍÍ POWER MOS V FREDFET Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V |
OCR Scan |
APT5024BVFR O-247 APT5024BVFR 00A/MS) MIL-STD-750 O-247AD | |
88 diode
Abstract: APT5024BVR
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APT5024BVR O-247 O-247 88 diode APT5024BVR | |
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Contextual Info: APT5024AVR 500V 18.5A 0.240W POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT5024AVR O-204AE) | |
Contextual Info: APT5024BFLL APT5024SFLL 500V 22A 0.240 POWER MOS 7 R FREDFET BFLL B Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering |
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APT5024BFLL APT5024SFLL O-247 | |
Contextual Info: APT5024BLL APT5024SLL 500V 22A 0.240W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON |
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APT5024BLL APT5024SLL O-247 O-247 | |
Contextual Info: • R A dvanced W .\A APT5024BVFR pow er Te c h n o l o g y “ soov POWER MOS V‘ 0.240q 22A FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
APT5024BVFR O-247 APT5024BVR | |
APT5024BFLL
Abstract: APT5024SFLL
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APT5024BFLL APT5024SFLL O-247 APT5024BFLL APT5024SFLL | |
uj 99
Abstract: APT5024BLL APT5024SLL
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APT5024BLL APT5024SLL O-247 O-247 uj 99 APT5024BLL APT5024SLL | |
660 tg diodeContextual Info: APT5024BVFR ADVANCED POW ER Te c h n o l o g y POWER MOSV 500V 22A 0.2400 FREDFET Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
APT5024BVFR O-247 APT5024BVR 660 tg diode | |
Contextual Info: APT5024BLL APT5024SLL 500V 22A 0.240W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON |
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APT5024BLL APT5024SLL O-247 O-247 | |
APT5024BVR
Abstract: APT5024SVR
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APT5024BVR APT5024SVR O-247 O-247 APT5024BVR APT5024SVR | |
Contextual Info: APT5024BVFR APT5024SVFR 22A 0.240Ω 500V POWER MOS V BVFR FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT5024BVFR APT5024SVFR O-247 O-247 APT5024BVFR |