APT6040 Search Results

Contextual Info: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN

Contextual Info: APT6040BVR ADVANCED W 7Æ P o w e r Te c h n o l o g y 6oov i6 a o.4oon POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

5540a

Contextual Info: ADVANCED POWER TECHNOLOGY H'IE D • QSST'lQ'l 0000472 TRO « A V P A dvanced P o w e r ■t-3°i-i5 Te c h n o l o g y APT6040AN 600V 15.5A 0.40 £2 APT5540AN 550V 15.5A 0.40 £2 APT6045AN 600V 14.5A 0.45 ß APT5545AN550V 14.5A 0.45 POWER MOS IV _

Contextual Info: APT6040BVR APT6040SVR 600V 16A 0.400Ω Ω BVR POWER MOS V D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

6040BN

Abstract: apt6040bn APT5540BN mc 668 L
Contextual Info: O A d v a n ced P o w er Te c h n o l o g y D APT6040BN APT5540BN APT6045BN APT5545BN Ô S ÜB WER MOS IV55 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.40U 0.400 0.451] 0.45!. 2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.

APT6040BNR

Contextual Info: O A d van ced P o w er Te c h n o l o g y O O s APT6040BNR 600V 18.0A 0.400 APT6045BNR 600V 17.0A 0.45S2 POWER MOS IV' UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A dvanced P o w er Te c h n o lo g y APT6040BVR 600 ' 16 V 0 400 2 A . Í POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: APT6040BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)310 Minimum Operating Temp (øC)

Contextual Info: • R A dvanced W .\A p o w e r Te c h n o lo g y “ APT6040BVR 600v i6a 0.400Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: • R ADVANCED W .\A p o w e r Te c h n o lo g y “ APT6040SVR 600v i6a 0.400Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

6040BN

Abstract: APT6040BN APT6045BN 6045bn
Contextual Info: D TO-247 G S POWER MOS IV APT6040BN 600V 18.0A 0.40Ω APT6045BN 600V 17.0A 0.45Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

APT6040SVR

Abstract: J 122
Contextual Info: •r rM APT6040SVR ADVANCED R o w er T e c h n o lo g y 600V 16A 0.400Q POWER M OSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

APT6040BNR

Contextual Info: O D O S A dvanced P ow er Te c h n o l o g y APT6040BNR APT6045BNR G B 'íitK MOS r ü 600V 18.0A 0.40Q 600V 17.0A 0.45U AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS >D Parameter APT6040BNR APT6045BNR UNIT

Contextual Info: APT6040BNR Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)19 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)310 Minimum Operating Temp (øC)

Contextual Info: APT6040BVFR APT6040SVFR APT6040BVFRG APT6040SVFRG 600V 15A 0.45 Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V FREDFET BVFR TO -2 47 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS

Contextual Info: APT6040BVR APT6040SVR 600V 15A POWER MOS V 0.45Ω BVR TO -2 47 D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS

Contextual Info: 600V 16A APT6040BVFR Ω 0.40Ω APT6040SVFR APT6040BVFRG*APT6040SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V FREDFET BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,

Contextual Info: APT6040SVR A dvanced P o w er T e c h n o lo g y 600v 16A 0.4000 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

APT6040BVFR

Abstract: APT6040SVFR
Contextual Info: APT6040BVFR APT6040SVFR 600V 16A POWER MOS V FREDFET 0.400Ω BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

6045h

Contextual Info: ADVANCED POWER TECHNOLOGY blE D • DZS?^ 000GÖ21 IS? « A V P ADVANCED POW ER T e c h n o lo g y 9 POWER MOS IV _ APT6040HN 600V 16.5A 0.40Q APT5540HN 550V 16.5A 0.40Q APT6045HN 600V 15.5A 0.45D APT5545HN550V15.5A 0.45H N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

5540A

Abstract: 6040an apt6040an APT 6040AN PT6040 APT5540AN APT5545AN APT6045AN DDD047E 6045AN
Contextual Info: ADVANCED POWER TECHNOLOGY M IE D OeST'ICH T IO * A V P A d va n c ed POWER ^ - 1 5 Te c h n o lo g y O D O DDDD47E APT6040AN APT5540AN APT6045AN APT5545AN S POWER MOS IV 600V 550V 600V 550V 15.5A 15.5A 14.5A 14.5A 0.40 0.40 0.45 0.45 £2 Cl ii £2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT6040BVR

Abstract: 600V 16A 16FA
Contextual Info: •r rM APT6040BVR ADVANCED R o w er T e c h n o lo g y 600V 16A 0.400Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: A dvanced P ow er Te c h n o l o g y O D APT6040BN APT5540BN APT6045BN APT5545BN O s POWER MOS IV' 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.40Q 0.40Í2 0.45ÍÍ 0.45Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER M0SFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D APT6040BNR APT6045BNR O s POWER MOS IV“ 600V 18.0A 0.40U 600V 17.0A 0.450 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS b ' dm ^GS V GSM PD TJ’TSTG All Ratings: T c = 25°C unless otherwise specified.