APT8030 Search Results
APT8030 Price and Stock
Microchip Technology Inc APT8030JVFRMOSFET N-CH 800V 25A ISOTOP |
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APT8030JVFR | Tube | 21 | 1 |
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APT8030JVFR | Tube | 26 Weeks | 20 |
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APT8030JVFR | 135 |
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APT8030JVFR | Bulk | 20 |
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APT8030JVFR | Tube | 26 Weeks |
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APT8030JVFR |
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APT8030JVFR | 1 |
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APT8030JVFR | Tube | 9 |
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APT8030JVFR | 20 |
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APT8030JVFR |
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Microchip Technology Inc APT8030LVRGMOSFET N-CH 800V 27A TO264 |
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APT8030LVRG | Tube | 25 |
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APT8030LVRG | Tube | 20 Weeks | 25 |
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APT8030LVRG | 7 |
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APT8030LVRG | Bulk | 25 |
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APT8030LVRG | Tube | 20 Weeks |
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APT8030LVRG |
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APT8030LVRG | 1 |
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APT8030LVRG | Tube | 16 |
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APT8030LVRG | 22 Weeks | 25 |
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APT8030LVRG | 21 Weeks | 25 |
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APT8030LVRG |
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Microchip Technology Inc APT8030LVFRGMOSFET N-CH 800V 27A TO264 |
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APT8030LVFRG | Tube | 25 |
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APT8030LVFRG | Tube | 26 Weeks | 25 |
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APT8030LVFRG | 25 |
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APT8030LVFRG | Bulk | 25 |
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APT8030LVFRG | Tube | 26 Weeks |
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APT8030LVFRG |
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APT8030LVFRG | 1 |
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APT8030LVFRG | Tube | 16 |
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APT8030LVFRG |
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Microchip Technology Inc APT8030B2VRGTransistor MOSFET N-Channel 800V 27A 3-Pin TO-247 - Rail/Tube (Alt: APT8030B2VRG) |
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APT8030B2VRG | Tube | 20 Weeks | 30 |
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APT8030B2VRG |
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APT8030B2VRG | Bulk | 30 |
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APT8030B2VRG | Tube | 20 Weeks |
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APT8030B2VRG |
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APT8030B2VRG | 1 |
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APT8030B2VRG | 16 |
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APT8030B2VRG |
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Microchip Technology Inc APT8030DVRMOSFET MOS 5 800 V 300 mOhm DIE, Projected EOL: 2044-04-30 - Contact for Pricing |
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APT8030DVR | 20 Weeks |
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APT8030 Datasheets (15)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APT8030 | Advanced Power Technology | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | Original | 62.25KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT8030B2VFR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 62.25KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT8030B2VFR |
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Power MOS V FREDFET | Original | 59.4KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT8030B2VR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 59.86KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT8030DN | Advanced Power Technology | APT Power MOS IV Commercial and Custom DIE | Scan | 389.75KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT8030JN | Advanced Power Technology | N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET | Original | 63.4KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT8030JVFR | Advanced Power Technology | POWER MOS V 800V 25A 0.300 Ohm | Original | 71.94KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT8030JVFR |
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Power MOS V FREDFET | Original | 66.48KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT8030JVR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 69.61KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT8030LVFR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 64.3KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT8030LVFR | Advanced Power Technology | Power MOS V | Original | 94.77KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT8030LVFR |
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Power MOS V FREDFET | Original | 60.73KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT8030LVFRG |
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MOSFET N-CH 800V 27A TO264 | Original | 64.1KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT8030LVR | Advanced Power Technology | High voltage N-Channel enhancement mode power MOSFET | Original | 62.04KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APT8030LVRG |
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MOSFET N-CH 800V 27A TO264 | Original | 61.83KB |
APT8030 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APT8030LVR A dvanced P o w er Te c h n o l o g y 800V 27A 0.300Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT8030LVR O-264 O-264AA | |
Contextual Info: APT8030B2VR A dvanced P o w er Tec h n o lo g y* 800V 27A 0.300Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT8030B2VR MIL-STD-750 | |
Contextual Info: APT8030LVFR A dvanced P o w er Te c h n o l o g y 800V POWER MOSV 27A 0.300Í1 iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT8030LVFR O-264 00A/HS, O-264AA | |
apt8030jvfrContextual Info: APT8030JVFR 25A 0.300Ω 800V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8030JVFR OT-227 E145592 apt8030jvfr | |
SJ 76 A DIODEContextual Info: A D VA NC E D POWER TECHNOLOGY 4SE D • 0 557^01 O OD OS ' l b 3 GS *A V P ad va n ced ^■1 T F -P a c k C F > W ä j P O W E r n R > ? : _ ech n o lo g y APT8030CFN 800V 29.0A 0.30, P APT7530CFN 750V 29.0A 0.30 i2 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEJS |
OCR Scan |
APT8030CFN APT7530CFN MIL-STD-750 SJ 76 A DIODE | |
8030JNContextual Info: A dvanced P o w er Te c h n o l o g y APT8030JN APT8035JN O s ISOTOP* 800V 27.0A 0.30Q 800V 25.0A 0.35Q "UL Recognized" File No. E145592 S POWER MOS IVe S IN G L E DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS |
OCR Scan |
APT8030JN APT8035JN E145592 8030JN 8035JN OT-227 | |
Contextual Info: O A d va n ced P o w er Te c h n o l o g y m D APT8030JN APT8035JN O s ISOTOP* 800V 800V 27.0A 0.30Q 25.0A 0.35U 5 M " U L Recognized" File No. E145592 S POWER MOS IV« SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS |
OCR Scan |
APT8030JN APT8035JN E145592 8030JN 8035JN OT-227 | |
APT8030LVFRContextual Info: APT8030LVFR Ω 27A 0.300Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8030LVFR O-264 O-264 APT8030LVFR | |
APT8030LVRContextual Info: APT8030LVR 800V 27A 0.300Ω POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
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APT8030LVR O-264 O-264 APT8030LVR | |
APT8030B2VFRContextual Info: APT8030B2VFR Ω 27A 0.300Ω 800V POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT8030B2VFR O-247 APT8030B2VFR | |
max7900Contextual Info: APT8030LVR A dvanced po w er Te c h n o l o g y 800V 27A 0.300Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT8030LVR O-264 APT8030LVR max7900 | |
Contextual Info: APT8030B2VFR • R A dvanced W .\A pow er Te c h n o lo g y " soov POWER MOS V 27 a 0.300Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
APT8030B2VFR O-247 | |
Contextual Info: APT8030B2VR 27A 0.300Ω 800V POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
APT8030B2VR O-247 | |
APT7530CFN
Abstract: APT8030CFN
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OCR Scan |
APT8030CFN APT7530CFN APT7530CFN MIL-STD-750 | |
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Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT8030JVFR 800V ' POWER MOS V 25A 0.300Í2 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT8030JVFR OT-227 APT8030JVFR MIL-STD-750 00A/MS, OT-227 | |
Contextual Info: APT8030JVR A dvanced P o w er Te c h n o l o g y 800V 25A 0.300Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™ |
OCR Scan |
APT8030JVR OT-227 10OA/ps) MIL-STD-750 OT-227 | |
APT8030JVRContextual Info: APT8030JVR 25A 0.300Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
APT8030JVR OT-227 E145592 APT8030JVR | |
Contextual Info: APT8030LVFR 27A 0.300Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
APT8030LVFR O-264 O-264 | |
Contextual Info: APT8030LVR A D V A N CED PO W ER Te c h n o l o g y 800V 27A 0.300Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
APT8030LVR O-264 | |
Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT8030JNFR ISOTOP* 800V 27A 0.30Q S U "UL Recognized" File No. E145592 S POWER MOS IVe N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified. |
OCR Scan |
APT8030JNFR E145592 APT8030JNFR OT-227 | |
Contextual Info: A dvanced P ow er Te c h n o lo g y APT8030JVR 800V ' 25A 0.300Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V'“ |
OCR Scan |
APT8030JVR OT-227 30JVR MIL-STD-750 00nnH, OT-227 | |
APT8030JNContextual Info: A dvanced P o w er Te c h n o l o g y APT8030JNFR ISOTOP® 800V 27A 0.30Í2 5 Ù "UL Recognized" File No. E145592 S POWER MOS IV1 AVALANCHE RATED FREDFET N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. |
OCR Scan |
APT8030JNFR E145592 OT-227 APT8030JN | |
Power MOSFET TT 2146
Abstract: MOSFET TT 2146 TO220H Z59 diode 414x
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OCR Scan |
APT8030FN APT7530FN 151ln. Power MOSFET TT 2146 MOSFET TT 2146 TO220H Z59 diode 414x | |
Contextual Info: • R W .\A A dvan ced APT8030B2VR po w er Te c h n o l o g y " soov 27 a 0.300Q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
OCR Scan |
APT8030B2VR O-247 APT8030B2VR |