AQV414AZ Search Results

AQV414

Abstract: AQV414A AQV414AX AQV414E AQV414EA AQV414EH AQV414EHA LR26550
Contextual Info: AQV41❍ PhotoMOS RELAYS GU General Use Type 1-Channel (Form B) Type FEATURES UL File No.: E43149 CSA File No.: LR26550 3. High sensitivity, low ON resistance Can control a maximum 0.12 A load current with a 5 mA input current. Low ON resistance of 50 Ω (AQV414E).

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Abstract: DW-AS-603-M12 schematic diagram dc to ac converter ultrasonic range meter IC electromagnetic relay HOW TO DRIVE SSR USING MOSFET DRIVER triac drive circuit pulse transformer Transistors Diodes smd e2 5 pins relay pin diagram convertor DC input 24 v output 5 v 2A
Contextual Info: AQV41❍ PhotoMOS RELAYS GU General Use Type 1-Channel (Form B) Type FEATURES UL File No.: E43149 CSA File No.: LR26550 3. High sensitivity, low ON resistance Can control a maximum 0.12 A load current with a 5 mA input current. Low ON resistance of 50 Ω (AQV414E).

pc111 optocoupler

Abstract: PC123 optocoupler qtc 2630 qtc 2531 optocoupler qtc 2631 qtc 2531 PC817 SOP-4 qtc 2731 PC113 optocoupler pc120 optocoupler
Contextual Info: California Eastern Laboratories Optocoupler & Solid State Relay Product Cross-Reference HOW TO USE THIS GUIDE The Cross Reference provides a listing of CEL/NEC’s closest replacement devices to the Manufacturer. The replacement may or may not be an exact replacement, so the customer should consult both data

AQV414

Abstract: AQV414A AQV414AX AQV414AZ
Contextual Info: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✬✩ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) FEATURES 3.9 .154 6.4 .252 8.8 .346 3.6 .142

AQV414

Abstract: AQV414A AQV414AX AQV414AZ Panasonic RELAY Cross Reference
Contextual Info: GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.

Contextual Info: GU PhotoMOS AQV414 GU PhotoMOS (AQV414) DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.

AQV414

Abstract: AQV414A AQV414AX AQV414AZ
Contextual Info: PhotoMOS RELAYS GU General Use Type [1-Channel (Form B) Type] FEATURES 6.4±0.05 .252±.002 8.8±0.05 .346±.002 3.9±0.2 .154±.008 6.4±0.05 .252±.002 8.8±0.05 .346±.002 3.6±0.2 .142±.008 
, 1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary

Contextual Info: AQV410 PhotoMOS RELAYS GU General Use Type 1-Channel (Form B) Type FEATURES UL File No.: E43149 CSA File No.: LR26550 1. Low on resistance fo r normallyclosed type This has been realized thanks to the built-in MOSFET processed by our pro­ prietary method, DSD (Double-diffused

Contextual Info: GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) AQV414 FEATURES 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3. High sensitivity and low onresistance Can control max. 0.15 A load current with 5 mA input current. 4. Low-level off state leakage current

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Contextual Info: GU PhotoMOS AQV414 DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.

Contextual Info: GU PhotoMOS AQV414 DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.

Contextual Info: GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) FEATURES 3.9 .154 6.4 .252 8.8 .346 3. High sensitivity and low onresistance Can control max. 0.15 A load current with 5 mA input current. 4. Low-level off state leakage current

AQV414

Abstract: 8085 AQV414A AQV414AX AQV414AZ 8085 temperature control
Contextual Info: GU PhotoMOS AQV414 GU PhotoMOS (AQV414) DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.

Contextual Info: PhotoMOS RELAYS GU General Use Type 1-Channel (Form B) Type FEATURES UL File No.: E43149 CSA File No.: LR26550 3. High sensitivity, low ON resistance Can control a maximum 0.12 A load current with a 5 mA input current. Low ON resistance of 50 Ω (AQV414E). Stable

AQV414

Abstract: AQV414A AQV414AX AQV414AZ
Contextual Info: GU PhotoMOS AQV414 GU PhotoMOS (AQV414) DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.

qtc 2601

Abstract: qtc 2531 pc111 optocoupler qtc 2631 qtc 2530 qtc 2630 qtc 2731 PC123 optocoupler qtc 2531 optocoupler QTC 3700
Contextual Info: California Eastern Laboratories OPTOCOUPLER & SOLID STATE RELAY CROSS REFERENCE OPTOCOUPLERS CROSS REFERENCE INDEX 1. SHARP . 1 2. TOSHIBA . 2

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Abstract: AQG22212 210HL induction cooker block diagrams 211EH DIP4 aqv234 044 schematic diagram induction furnace 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM AQV251G 500w amply
Contextual Info: Global Network North America Europe Asia Pacific China Japan Panasonic Electric Works Please contact our Global Sales Companies in: Europe  Headquarters Panasonic Electric Works Europe AG Rudolf-Diesel-Ring 2, 83607 Holzkirchen, Tel. +49 0 8024 648-0, Fax +49 (0) 8024 648-111, www.panasonic-electric-works.com

AQV414

Abstract: AQV414A AQV414AX AQV414AZ
Contextual Info: PhotoMOS RELAYS GU General Use Type [1-Channel (Form B) Type] 
, Cross section of the normally-closed type of power MOS 6.4±0.05 .252±.002 8.8±0.05 .346±.002 3.9±0.2 .154±.008 Passivation membrane Intermediate Source electrode Gate electrode