tvs 6ae
Abstract: SMA6F20A marking 6ap 6bg 92 M 600-AG 6BG TVS GENERAL SEMICONDUCTOR diodes marking code me
Text: V ishay I n tertech n o l o g y, I n c . Diodes – Industry’s Lowest Profile SlimSMA Package I INNOVAT AND TEC O L OGY SMA6F5.0A thru SMA6F20A N HN DIODES O 19 62-2012 Surface-Mount TRANSZORB Transient Voltage Suppressors FEATURES • Very low profile – 0.95 mm
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SMA6F20A
23-Nov-11
VMN-PT0322-1206
tvs 6ae
marking 6ap
6bg 92 M
600-AG
6BG TVS
GENERAL SEMICONDUCTOR diodes marking code me
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AH276Z4-G1
Abstract: AH276 AH276Z4-AE1 AH276Z4-BE1 AH276Z4-CE1
Text: Product Brief VOLTAGE DETECTOR COMPLEMENTARY OUTPUT HALL EFFECT LATCH Description AZ70XX AH276 Parametric Table The AH276 is an integrated sensor withdetectors output driver AZ70XX series ICs areHall under voltage with Supply Output Voltage Saturation Max
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AZ70XX
AH276
AH276
AZ70XX
350mA)
OT-89-3
AH276Z4-G1
AH276Z4-AE1
AH276Z4-BE1
AH276Z4-CE1
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . DIODES SMA6F5.0A thru SMA6F20A Surface-Mount TRANSZORB Transient Voltage Suppressors FEATURES • Very low profile – 0.95 mm • SMA footprint compatible • Peak pulse power –– 600 W at 10/1000 µs
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SMA6F20A
For100
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AO4614B
Abstract: AO4614BL
Text: AO4614B Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614B/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AO4614B
AO4614B/L
AO4614B
AO4614BL
-AO4614BL
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Untitled
Abstract: No abstract text available
Text: 212 54F/74F212 Connection Diagrams 144-Bit Random Access Memory With 3-State Outputs S L9 DascrTp scnpt The ’F; eed 144-bit Random Access Memory RAM organized by 9-bit array. Address inputs are buffered to minimize loadT areJAiU>t.decoded on chip. The output buffers are
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54F/74F212
144-Bit
54F/74F
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Untitled
Abstract: No abstract text available
Text: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte
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TMS28F040
304-BIT
SMJS040-DECEMBER
A0-A18
32-pin
40-pin
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stk 442 -130
Abstract: xc68hc711 XC68HC711D3 M68HC711D3 C45A M68HC11EVM MC68HC11 MC68HC711D3 ic stk 441 EEPR
Text: MC68HC711D3/D Rev. 1 MC68HC711D3 TECHNICAL DATA MOTOROLA MC68HC711D3 HCMOS MICROCONTROLLER UNIT Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out
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mc68hc711d3/d
MC68HC711D3
suitabilitMC68HC711D3
MC68HC711D3/D
1ATX22547-4
stk 442 -130
xc68hc711
XC68HC711D3
M68HC711D3
C45A
M68HC11EVM
MC68HC11
MC68HC711D3
ic stk 441
EEPR
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Untitled
Abstract: No abstract text available
Text: EL7104C/EL7114C Features G eneral D escription • Industry standard driver replacement • Improved response times • Matched rise and fall times • Reduced clock skew • Low output impedance • Low input capacitance • High noise immunity • Improved clocking rate
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EL7104C/EL7114C
EL7104C/EL7114C
TC-4420/29
L7104
DQD37m
00D371S
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cj cl a17
Abstract: No abstract text available
Text: TMS29LF004T, TMS29LF004B 524288 BY 8-BIT FLASH MEMORIES Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization: 524288 x 8 Bits Array Blocking Architecture • • • • - • • • • • • • • • One 16K-Byte Protected-Boot Sector
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TMS29LF004T,
TMS29LF004B
SMJS850
16K-Byte
32K-Byte
64K-Byte
cj cl a17
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2T931A
Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K
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MOKP51KOB,
KTC631
TI2023
II2033
TT213
TI216
fI217
II302
XI306
n306A
2T931A
KT853
2T926A
KT838A
2T803A
2T809A
2T904A
2T808A
2T603
2T921A
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HARRIS 82C54
Abstract: CS82C54-10 P82C54
Text: HARRIS SEMICOND SECTOR MbE D • M302E71 DD3flb'fll 3 « H A S R O C ' R A H A R R I S S E M I C O N D U C T O R i / i f a T - 3 Z .- 3 3 - 0 5 February CM OS Programmable Interval Timer 1992 Features Description • 10MHz or 8MHz Clock Input Frequency The Harris 82C54 is a high performance C M O S Programma
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M302E71
82C54
16-bit
82C54)
10MHz
82C54-10)
80C86,
80C88,
HARRIS 82C54
CS82C54-10
P82C54
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Untitled
Abstract: No abstract text available
Text: 52E D H = 7 *7fn • 7=^237 S C S -1 H O M S O N L' Iiu r a m « D037Sbb OTT ■ SGTH s fi ^ hohson M 27C512 CMOS 512K 64K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION:
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D037Sbb
27C512
M27C512
FDIP28W
PDIP28
PLCC32
PTS028
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FZJ 101
Abstract: 772t presto II Thomson capacitors lcc M27C405 M27V405 PLCC32 TSOP32 D772
Text: r = 7 *7 # S G S -T H O M S O N « O S m iS T G M D I ê i M 2 7 V 4 0 5 LOW VOLTAGE 4 Megabit 512K x 8 OTP EPROM PRELIMINARY DATA • PIN COMPATIBLE with the 4 MEGABIT, SINGLE VOLTAGE FLASH MEMORY ■ LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns
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M27V405
120ns
48sec.
27sec.
M27V405
M27C405
PLCC32
TSOP32
micro-processorsys/13
FZJ 101
772t
presto II
Thomson capacitors lcc
PLCC32
TSOP32
D772
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800w power amplifier circuit diagram
Abstract: ANI 1015 ISO calibration certificate formats lead side brazed hermetic ADC674A
Text: COMPONENTS B U R R -B R O W N * [ ADC674A/883B SERIES 1 ADC674ASD/883B ADC674ATD/883B REVISION NONE FEBRUARY, 1989 Microprocessor-Compatible ANALOG-TO-DIGITAL CONVERTER FEATURES • COMPLETE 12-BIT A/D CONVERTER WITH REFERENCE, CLOCK, AND 8-, 12-, OR 16BIT MICROPROCESSOR BUS INTERFACE
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ADC674A/883B
ADC674ASD/883B
ADC674ATD/883B
28-PIN
12-BIT
16BIT
74A-TYPE
15jis
150ns
800w power amplifier circuit diagram
ANI 1015
ISO calibration certificate formats
lead side brazed hermetic
ADC674A
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VG46VS8325
Abstract: ic 3645 sh xaxs
Text: VG46VS8325 131,072 x 32 x 2-Bit CM O S Synchronous Graphic RA M Preliminary Pin Assignment Top View Features • Fast access time from clock: 8/1Ons • Fast clock rate: 100/83MHz • Fully synchronous operation • Internal pipelined architecture • Dual internal banks(128K x 32-bit x 2-bank)
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VG46VS8325
100/83MHz
32-bit
cycles/16ms
100-pin
1G5-0057
IG5-0057
ic 3645 sh
xaxs
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DS1232* watch dog timer
Abstract: capacitor trip device
Text: r r u LTC1232 TECHNOLOGY v m Microprocessor Supervisory Circuit F€ATUR€S D € S C M P T IO n • Guaranteed Reset Assertion at Vcc = 1V ■ 8-Pin SOIC Plastic Package ■ 2.0mA Maximum Supply Current ■ 4.62V/4.37V Precision Voltage Monitor ■ Power OK/Reset Time Delay: 600ms
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LTC1232
600ms
DS1232
LTC1232
DS1232* watch dog timer
capacitor trip device
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nmc27c512aq
Abstract: SD112b
Text: NATL SENICOND {MEMORY} IDE D | b S O H S b OOblSbT fl | p r e l im in a r y NMC27C512AN 524,288-Bit 64k x 8 One Time Programmable CMOS PROM General Description Features The NMC27C512AN is a high-speed 512K UV one time pro grammable CMOS EPROM, ideally suited for applications
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NMC27C512AN
NMC27C512AN
288-Bit
28-pin
nmc27c512aq
SD112b
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Untitled
Abstract: No abstract text available
Text: M ic r o c h ip P I C 1 6 C 5 4 A EPROM-Based 8-Bit CMOS Microcontroller FEATURES FIGURE A - PIN CONFIGURATIONS Compatibility PDIP, SOIC, CERDIP Window • Pin and software compatible with PIC16C54 device High-Performance RISC-like CPU • Only 33 single word instructions to learn
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PIC16C54
200ns
DS30207B-page
1D3201
0DDT34T
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6A20n
Abstract: MOST25
Text: I 6A20n m o jx DIODE OBIUHE CBEÆEHHH GENERAL /JeMncJiepHbiH ahoa 6^2011 npeflHa3HaneH ajih paÔOTbl B ÔJIOKaX CTpOHHOH pa3BepTKH TejieBH3HOHHbIX npHeMHHKOb c ymoM otkjiohchhsi jiyna KHHecxona AO 110°C. K aToa — oKCHüHkiH icocBeHHoro HaKajia. M acca He 6ojiee 25 r.
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6A20n
MOST25
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TST02
Abstract: AES17-1991 93rd AES171991 CS5396 CS5397
Text: PRODUCT PREVIEW A Cirrus Logic Company _ 120 dB, 96 kH z A udio A /D C onverter Features General Description • 24-Bit Resolution • Complete CMOS Stereo A/D System Delta-Slgma A/D Converters Digital Anti-Alias Filtering S/H Circuitry and Voltage Reference
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24-Bit
CS5396
CS5397
18-Bit
19-Bit
DS229PP1
2S4L324
TST02
AES17-1991
93rd
AES171991
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FZJ 101
Abstract: No abstract text available
Text: C r C . T U n M C n iü o lio m U IY IO U r a LF155 - LF255 LF156 - LF256 - LF355 - LF356 LF157 - LF357 - LF257 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS . HIGH INPUT IMPEDANCE J-FET INPUT STAGE . HIGH SPEED J-FET OP-AMPs : UP to 20MHz, 50V/ns • OFFSET VOLTAGE ADJUST DOES NOT
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LF155
LF255
LF156
LF256
LF355
LF356
LF157
LF357
LF257
20MHz,
FZJ 101
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Untitled
Abstract: No abstract text available
Text: KM75C02A CMOS FIFO First-in First-out FIFOj 1024 x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 1024 x 9 organization • Very high speed independent of depth/width — 25ns cycle times • Asynchronous and simultaneous read and write
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KM75C02A
150mA
KM75C02A
IDT7202A.
75C02A
32-PIN
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Untitled
Abstract: No abstract text available
Text: ¡R samsung * 0 Semiconductor KM75C102A CMOS FIFO WITH PROGRAMMABLE FLAG Preliminary FEATURES DESCRIPTION • Flrst-lrvFlrst-Out Dual Port Memory — 1Kx9 The 75C102A is a 1K x 9 dual port memory that imple ments a special First-In-First-Out FIFO algorithm that
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KM75C102A
75C102A
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jd 1803 IC
Abstract: cctkc OB 3309 RP soviet cathode ray siek 1 6H23 DSAGER00034 ROD PENTODE S3 TRIO 64
Text: * HO* mm * HAi m y / K A T A JIO F CATALOGUE blnlk » Macxb 3 -iIO P r — OHHH H 3 K p y n H e illU H X B M H p e n p O M M L U JieH H O C T H . H3ZieJTHK 3 /ieK T p O H H O H 143HejTHH CO BeTCKO H 3 Jie K T p O H IfK H , 0 6 j i a j i a K > m H e BblCOKOH H a-
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143HejTHH
jd 1803 IC
cctkc
OB 3309 RP
soviet
cathode ray
siek 1
6H23
DSAGER00034
ROD PENTODE
S3 TRIO 64
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