AS6C8016A Search Results

Contextual Info: AS6C8016A Low Power, 512Kx16 SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Date Remark 0.0 -. Initial issue Apr. 7 2009 1.0 -. tDW updated to 40ns Mar. 2 2010 2.0 -. tDW updated to 25ns 45ns, 55ns , 30ns(70ns)

FPBGA48

Contextual Info: AUGUST 2010 AS6C8016A 512K X 16 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION • • • • • • The AS6C8016A is fabricated by Alliance ' s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale

Contextual Info: AUGUST 2010 AS6C8016A 512K X 16 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION • • • • • • The AS6C8016A is fabricated by Alliance ' s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale

Contextual Info: AUGUST 2010 AS6C8016A 512K X 16 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION • • • • • • The AS6C8016A is fabricated by Alliance ' s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale

AS8C801800

Abstract: AS8C803600
Contextual Info: 256K X 36, 512K X 18 3.3V Synchronous SRAMs AS8C803600 3.3V I/O, Burst Counter AS8C801800 Pipelined Outputs, Single Cycle Deselect Features ◆ ◆ 256K x 36 / 512K x 18. The SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to

AS8C401800

Abstract: AS8C403600 as6c8016a
Contextual Info: 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ AS8C403600 AS8C401800 Description 128K x 36, 256K x 18 memory configurations Supports high system speed:

CY62148E

Abstract: R1LP0108ESA-7SR
Contextual Info: Selection Guide Low Power SRAM www.renesas.eu 2014.03 About Renesas Electronics Corporation Renesas Electronics Corporation TSE: 6723 , the world’s number one supplier of microcontrollers, is a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad range of analog and power devices.

AS8C801801

Abstract: AS8C803601
Contextual Info: 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs AS8C803601 AS8C801801 Address and control signals are applied to the SRAM during one clock cycle, and two cycles later the associated data cycle occurs, be it read or write.

m5280

Contextual Info: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆   AS8C403625 AS8C401825 TheAS8C403625/1825 are high-speed SRAMs organized as 128K x 36/256K x 18. The AS8C403625/1825 SRAMs contain write, data,

AS6C1616A

Abstract: AS6C8016
Contextual Info: AUGUST 2010 AS6C1616A 1024K X 16 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION • • • • • • TheAS6C1616A - 55%,1 is fabricated by Alliance's advanced full CMOS process technology. The device supports industrial temperature range and Chip Scale

AS8C401825

Abstract: AS8C403625
Contextual Info: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆   AS8C403625 AS8C401825 TheAS8C403625/1825 are high-speed SRAMs organized as 128K x 36/256K x 18. The AS8C403625/1825 SRAMs contain write, data,