ASI10724 Search Results

ASI10724 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
ASI10724		Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR	Original	PDF	17.69KB	1

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is an NPN power transistor, designed for 108-175 MHZ applications. The device utilizes diffused emitter resistor to achieve good VSWR capability. PACKAGE STYLE .380 4L FLG B .112 x 45°	Original	VHB25-28F VHB25-28F /SI10724	PDF
ASI10724 Abstract: VHB25-28F Contextual Info: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VHB25-28F is Designed for FEATURES: B .112 x 45° A • • • Omnigold Metalization System Ø.125 NOM. FULL R J .125 C D E F MAXIMUM RATINGS G IC 4.0 A VCBO 65 V	Original	VHB25-28F VHB25-28F ASI10724 ASI10724	PDF
ASI10724 Abstract: VHB25-28F Contextual Info: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG FEATURES: B • Common Emitter • PG = 8.5 dB at 25 W/175 MHz • Omnigold Metalization System	Original	VHB25-28F VHB25-28F ASI10724 ASI10724	PDF
VHB25-28F Abstract: ASI10724 Contextual Info: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is an NPN power transistor, designed for 108-175 MHZ applications. The device utilizes diffused emitter resistor to achieve good VSWR capability. PACKAGE STYLE .380 4L FLG FEATURES: B	Original	VHB25-28F VHB25-28F ASI10724 ASI10724	PDF